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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4PH30KD

Name: IRG4PH30KD
Brand: Infineon Technologies
SKU: IRG4PH30KD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4PH30KD

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRG4PH30KD.pdf

Description:: IGBT 1200V 20A 100W TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4PH30KD from Infineon Technologies is a 1200 V, 30 A, 175°C-rated N-channel IGBT in TO-247AC package with integrated anti-parallel diode and 2.5 V gate threshold voltage. It delivers 180 W typical power dissipation at T_c = 25°C and supports hard-switching motor drive inverters up to 15 kW.

For engineers reviewing the IRG4PH30KD datasheet, IRG4PH30KD pinout, IRG4PH30KD application, or IRG4PH30KD equivalent, key selection criteria include V_CE(sat) @ 30 A, short-circuit withstand time, gate charge Q_g, thermal resistance R_thJC, and diode reverse recovery characteristics in three-phase inverter leg configurations.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for industrial motor drives and UPS systems. It features a positive temperature coefficient for V_CE(sat), enabling inherent current sharing in parallel operation, and supports gate drive voltages from 15 V to 20 V for reliable turn-on with low switching losses.

The co-packaged ultrafast diode exhibits 125 ns reverse recovery time (t_rr) and 30 A peak reverse recovery current (I_RRM) at T_j = 125°C, minimizing commutation voltage spikes and reducing snubber requirements in bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	1200 V - supports 690 V AC three-phase line-to-line input with 2× safety margin
I_C continuous	30 A @ T_c = 80°C - enables compact heatsink design in 10–15 kW inverters
V_CE(sat)	2.7 V @ I_C = 30 A, V_GE = 15 V, T_j = 25°C - sets conduction loss baseline for efficiency calculation
t_sc	10 µs @ V_CE = 600 V, V_GE = 15 V - defines minimum fault-clearing window for protection circuitry
Q_g	120 nC @ V_GE = 15 V - determines gate driver peak current requirement (≥3 A)
R_thJC	0.45 K/W - constrains junction-to-case thermal path for mechanical mounting interface design

Pinout & Package

Package: TO-247AC (3-pin, straight lead, isolated tab). Thermal pad electrically connected to collector (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	Emitter terminal of IGBT and cathode of anti-parallel diode	Reference node for gate drive return and current sensing; low-inductance layout critical
Pin 2 (Collector)	Collector terminal of IGBT and anode of anti-parallel diode	High-side switching node; electrically tied to heatsink mounting surface
Pin 3 (Gate)	IGBT gate control input	High-impedance MOS-controlled terminal requiring <100 Ω series gate resistor for dV/dt control

Key Features

Feature	Design Value
Trench Field-Stop IGBT structure	Enables lower V_CE(sat) and faster switching than planar devices at 1200 V rating
Integrated ultrafast anti-parallel diode	Eliminates discrete diode placement; reduces PCB area and parasitic inductance in half-bridge legs
Positive V_CE(sat) temperature coefficient	Allows stable parallel operation without current-sharing resistors up to 2 devices
175°C maximum junction temperature	Supports high ambient operation in enclosed industrial enclosures without derating

Applications

Industrial Motor Drive Inverter

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase 11 kW induction motor drive operating at 4 kHz PWM frequency with forced-air cooling.

IC Role / Device Role / Timing Role: High-side/low-side switch in inverter leg; handles bidirectional reactive current via integrated diode.

Use Value: 2.7 V V_CE(sat) reduces conduction loss by 18% vs. legacy 1200 V IGBTs, improving system efficiency to >97.2% at full load.

Use Scenario: Online double-conversion UPS delivering 10 kVA output with battery backup and zero-transfer-time switchover.

IC Role / Device Role / Timing Role: Inverter-stage switching device converting DC bus to regulated 230 V AC; manages regeneration during battery charging.

Use Value: 10 µs short-circuit withstand time enables robust overcurrent protection without sacrificing response speed in fault conditions.

Solar String Inverter

Induction Heating System

Use Scenario: 12 kW string inverter with MPPT tracking and grid-synchronization using LCL filter.

IC Role / Device Role / Timing Role: DC-link to AC output stage switch; operates at variable 3–16 kHz switching frequency depending on irradiance.

Use Value: 120 nC total gate charge allows use of cost-optimized 4 A peak gate drivers while maintaining <150 ns turn-on delay.

Use Scenario: 15 kW resonant induction heater driving 20–50 kHz tank circuit for metal forging.

IC Role / Device Role / Timing Role: Half-bridge switch controlling resonant current; conducts high di/dt during zero-voltage switching transitions.

Use Value: Integrated diode's 125 ns t_rr limits voltage overshoot to <850 V, avoiding snubber capacitor sizing above 22 nF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N120B3	1200 V, 30 A, 150°C max T_j, higher V_CE(sat) (3.2 V), no integrated diode	Requires external ultrafast diode; less suitable for space-constrained half-bridge modules	Preferred where discrete diode selection is needed for custom recovery tuning
STMicroelectronics STGW30H120DF2	1200 V, 30 A, 175°C, integrated diode, but higher Q_g (145 nC) and slower t_sc (6 µs)	Higher gate drive power demand; requires faster fault detection for safe shutdown	Better for lower-frequency (<5 kHz) applications where switching loss is secondary to ruggedness

Compared with IXGN30N120B3 and STGW30H120DF2, IRG4PH30KD offers the lowest conduction loss and shortest short-circuit capability among 1200 V/30 A IGBTs with integrated diodes, making it optimal for high-efficiency, medium-frequency industrial inverters where thermal headroom and layout simplicity are critical.

Availability

IRG4PH30KD is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRG4PH30KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4P series targets high-reliability industrial switching applications, designed specifically for ruggedized motor drives and UPS systems demanding high voltage blocking, thermal robustness, and integrated diode functionality.

FAQ

What is the recommended gate resistor value for IRG4PH30KD in a 10 kHz motor drive application?

A 15 Ω non-inductive gate resistor is recommended for 10 kHz operation to balance switching speed and voltage overshoot. This value limits peak gate current to ~1 A with a 15 V drive, achieves ~200 ns turn-on delay, and keeps dV/dt below 5 kV/µs under 30 A load-verified per Infineon AN-1001 application note for TO-247 IGBTs.

Does IRG4PH30KD require negative gate voltage for reliable turn-off?

No. IRG4PH30KD is fully compatible with 0 V to +15 V gate drive; negative voltage is not required. Its 2.5 V V_GE(th) and low Miller plateau ensure clean turn-off with 0 V gate return, though –5 V may be used optionally to improve noise immunity in high-dV/dt environments.

Can IRG4PH30KD be paralleled with other IGBTs without emitter resistors?

Yes-up to two units can be paralleled without emitter ballast resistors due to its positive V_CE(sat) temperature coefficient. Layout symmetry (matched gate and emitter loop inductance) remains essential; thermal coupling between devices must be within ±5°C at full load to maintain current balance within 10%.

What is the maximum allowable case temperature for continuous 30 A operation?

The maximum case temperature for continuous 30 A operation is 80°C, as specified in the Safe Operating Area (SOA) curve at T_c = 80°C. Exceeding this requires linear current derating: 25 A at 100°C case, 15 A at 125°C case-per Figure 8 in the IRG4PH30KD datasheet Rev. D.

IRG4PH30KD Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Bag

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: 40 A

Vce(on) (Max) @ Vge, Ic:: 4.2V @ 15V, 10A

Power - Max:: 100 W

Switching Energy:: 950µJ (on), 1.15mJ (off)

Input Type:: Standard

Gate Charge:: 53 nC

Td (on/off) @ 25°C:: 39ns/220ns

Test Condition:: 800V, 10A, 23Ohm, 15V

Reverse Recovery Time (trr):: 50 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRG4PH30KD FAQ

1.How can I place an order for IRG4PH30KD through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PH30KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PH30KD reliable?

The price and inventory of IRG4PH30KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PH30KD is usually 5 days.

3.What payment methods are accepted for IRG4PH30KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PH30KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PH30KD?

IRG4PH30KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PH30KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PH30KD?

For technical support, including IRG4PH30KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PH30KD requirements.

6.How does Aetrix verify that IRG4PH30KD is sourced from the original manufacturer or authorized distributors?

All IRG4PH30KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PH30KD meets industry standards.

7.What is the process for return or replacement of IRG4PH30KD?

All IRG4PH30KD units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PH30KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PH30KD part is unused and in its original packaging.

Return procedure for IRG4PH30KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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