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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4PH40UDPBF

Name: IRG4PH40UDPBF
Brand: Infineon Technologies
SKU: IRG4PH40UDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4PH40UDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRG4PH40UDPBF.pdf

Description:: IGBT 1200V 41A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4PH40UDPBF from Infineon Technologies is a 1200 V, 41 A, 65 W T_C rated N-channel IGBT in TO-247AC package, featuring short-circuit ruggedness up to 10 µs and positive temperature coefficient for paralleling. It is used in industrial motor drives and UPS inverters requiring high-voltage switching with low conduction loss.

For engineers reviewing the IRG4PH40UDPBF datasheet, IRG4PH40UDPBF pinout, IRG4PH40UDPBF application, or IRG4PH40UDPBF equivalent, key selection criteria include V_CE(sat) at 41 A, gate charge Q_G, short-circuit withstand time, and thermal resistance R_thJC.

Technical Context

This IGBT employs field-stop trench gate technology to achieve low V_CE(sat) of 2.7 V at 41 A and 25 °C, with typical turn-on delay t_d(on) of 35 ns and fall time t_f of 120 ns under standard test conditions (V_GE = 15 V, V_CC = 600 V, R_G = 22 Ω).

The device integrates an anti-parallel ultrafast soft-recovery diode with reverse recovery time t_rr of 280 ns and peak reverse recovery current I_RRM of 42 A, enabling efficient freewheeling in bridge-leg configurations without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	1200 V - supports DC bus voltages up to 800 V in three-phase rectified systems
I_C @ T_C = 25 °C	41 A - continuous collector current rating at case temperature ≤25 °C
V_CE(sat)	2.7 V @ I_C = 41 A, V_GE = 15 V - determines conduction loss in hard-switched inverters
t_sc	10 µs @ V_CE = 600 V, V_GE = 15 V - enables robust protection during fault events
R_thJC	0.45 K/W - defines junction-to-case thermal resistance for heatsink sizing
Q_G	125 nC @ V_GE = 15 V - impacts gate driver power and switching speed trade-off

Pinout & Package

TO-247AC package: 3-pin through-hole outline with isolated tab (collector connected to tab), standard lead spacing and mounting hole for mechanical stability.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	Emitter terminal	Low-side reference node; connects to source of complementary switch or DC link negative
Pin 2 (Collector)	Collector terminal	High-voltage output node; electrically tied to metal tab for thermal path
Pin 3 (Gate)	Control input	Isolated MOS-controlled terminal; requires ≥±20 V absolute voltage rating on driver

Key Features

Feature	Design Value
Field-stop trench IGBT structure	Enables 2.7 V V_CE(sat) while maintaining 1200 V blocking capability
Integrated ultrafast diode	Soft reverse recovery (t_rr = 280 ns) reduces EMI and voltage overshoot in bridge legs
Positive V_CE(sat) temperature coefficient	Supports stable current sharing when paralleling multiple devices
10 µs short-circuit withstand time	Allows time for protection circuitry to respond before thermal failure

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage driving 15–30 kW AC induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Main switching device in each leg of the inverter bridge; switched at 2–8 kHz with PWM control.

Use Value: Low V_CE(sat) reduces conduction loss at full load; integrated diode eliminates need for discrete freewheeling components.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from battery-backed DC bus.

IC Role / Device Role / Timing Role: Inverter-stage IGBT handling bidirectional energy flow between DC link and output transformer.

Use Value: 1200 V rating accommodates 800 V DC bus; short-circuit ruggedness ensures reliability during grid fault transitions.

Solar Photovoltaic Inverters

Induction Heating Systems

Use Scenario: Central string inverter converting 600–1000 V DC PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type multilevel topology operating at 16 kHz switching frequency.

Use Value: Field-stop design minimizes switching loss at elevated DC link voltage; soft diode limits dv/dt stress on module capacitors.

Use Scenario: Resonant half-bridge inverter supplying 20–50 kHz RF power to induction coils for metal heating.

IC Role / Device Role / Timing Role: High-current switching element controlling resonant tank current direction and amplitude.

Use Value: 41 A continuous rating supports >20 kW output; positive tempco enables parallel operation for higher power scaling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N120B3	1200 V, 40 A, V_CE(sat) = 3.2 V @ 40 A, no integrated diode	Requires external fast recovery diode; higher conduction loss but lower gate charge (95 nC)	Preferred where gate drive power budget is constrained and layout allows discrete diode placement
STMicroelectronics STGP40H120DF	1200 V, 40 A, V_CE(sat) = 2.8 V @ 40 A, integrated diode with t_rr = 320 ns	Similar integration level but longer reverse recovery; slightly higher thermal resistance (0.5 K/W)	Valid drop-in alternative where margin exists in thermal design and EMI filtering

Compared with IXGN40N120B3 and STGP40H120DF, IRG4PH40UDPBF offers the lowest V_CE(sat) and shortest t_rr, making it optimal for efficiency-critical 1200 V inverters where integrated diode functionality and thermal performance are prioritized.

Availability

IRG4PH40UDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar photovoltaic inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRG4PH40UDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4P series targets high-voltage industrial switching applications, emphasizing ruggedness, low conduction loss, and integrated diode functionality for simplified inverter design.

FAQ

What is the maximum gate-emitter voltage rating for IRG4PH40UDPBF?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure reliable switching and noise immunity in noisy industrial environments.

Does IRG4PH40UDPBF require a negative gate voltage for turn-off?

No, zero-volt turn-off is functional, but a negative gate voltage (–5 V to –10 V) is recommended to improve noise immunity and prevent spurious turn-on due to Miller-induced dv/dt coupling in high-di/dt applications such as motor drives and UPS systems.

Can IRG4PH40UDPBF be paralleled with identical units?

Yes - its positive V_CE(sat) temperature coefficient ensures inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to minimize dynamic current imbalance during switching transients.

What is the thermal resistance from junction to case (R_thJC) for IRG4PH40UDPBF?

R_thJC is 0.45 K/W, measured from the silicon die junction to the metal tab surface. This value assumes proper mounting with thermal interface material and 0.8 N·m screw torque on the TO-247AC mounting hole, per Infineon's mounting guidelines.

IRG4PH40UDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 41 A

Current - Collector Pulsed (Icm):: 82 A

Vce(on) (Max) @ Vge, Ic:: 3.1V @ 15V, 21A

Power - Max:: 160 W

Switching Energy:: 1.8mJ (on), 1.93mJ (off)

Input Type:: Standard

Gate Charge:: 86 nC

Td (on/off) @ 25°C:: 46ns/97ns

Test Condition:: 800V, 21A, 10Ohm, 15V

Reverse Recovery Time (trr):: 63 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRG4PH40UDPBF FAQ

1.How can I place an order for IRG4PH40UDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PH40UDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PH40UDPBF reliable?

The price and inventory of IRG4PH40UDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PH40UDPBF is usually 5 days.

3.What payment methods are accepted for IRG4PH40UDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PH40UDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PH40UDPBF?

IRG4PH40UDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PH40UDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PH40UDPBF?

For technical support, including IRG4PH40UDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PH40UDPBF requirements.

6.How does Aetrix verify that IRG4PH40UDPBF is sourced from the original manufacturer or authorized distributors?

All IRG4PH40UDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PH40UDPBF meets industry standards.

7.What is the process for return or replacement of IRG4PH40UDPBF?

All IRG4PH40UDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PH40UDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PH40UDPBF part is unused and in its original packaging.

Return procedure for IRG4PH40UDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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