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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4PH40UPBF

Name: IRG4PH40UPBF
Brand: Infineon Technologies
SKU: IRG4PH40UPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4PH40UPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRG4PH40UPBF.pdf

Description:: IGBT 1200V 41A TO247AC

Quantity:: RFQ Add To RFQ list

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Inventory:5,317

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Product details

Overview

IRG4PH40UPBF from Infineon (formerly International Rectifier) is a 1200 V, 41 A ultra-fast IGBT in TO-247AC package, optimized for hard-switching up to 40 kHz and resonant-mode operation beyond 200 kHz. It delivers 2.43 V typical V_CE(on) at 21 A/15 V_GE, 86 nC total gate charge, and 4.44 mJ total switching loss at 25°C - enabling high-efficiency SMPS, UPS inverters, and industrial welding power stages.

For engineers reviewing the IRG4PH40UPBF datasheet, IRG4PH40UPBF pinout, IRG4PH40UPBF application, or IRG4PH40UPBF equivalent, key selection criteria include clamped inductive load capability (82 A), avalanche energy rating (270 mJ), thermal resistance (0.77 °C/W J-C), gate drive compatibility (±20 V), and SOA compliance at 960 V with 10 Ω gate resistor.

Technical Context

This IGBT employs a trench-gate field-stop structure with optimized carrier lifetime control to achieve tight parameter distribution and reduced conduction–switching trade-off. Its 13 nH internal emitter inductance and low C_res (18 pF) support clean turn-off waveforms under high dV/dt conditions.

The device operates with gate threshold voltage of 3.0–6.0 V and exhibits negative temperature coefficient for V_GE(th) (−11 mV/°C), enabling inherent current sharing in parallel configurations. Switching performance is characterized at V_CC = 960 V, I_C = 21 A, T_J = 25°C/150°C, and R_G = 10 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - supports 960 V DC bus operation with 20% margin for transients
I_C @ T_C = 25°C	41 A - enables 3.5 kW continuous conduction in air-cooled TO-247 designs
V_CE(on) typ.	2.43 V @ 21 A/15 V_GE - reduces conduction loss vs. MOSFETs at >10 A
E_ts total	4.44 mJ @ 25°C - defines minimum dead-time and heatsink sizing for 40 kHz operation
R_θJC	0.77 °C/W - allows 65 W dissipation at 100°C case temp with ≤50°C junction rise
Q_g	86 nC - determines gate driver peak current requirement (≥8.6 A for 10 ns rise)
Clamped I_LM	82 A - supports robust short-circuit withstand in welder primary switches

Pinout & Package

IRG4PH40UPBF uses industry-standard TO-247AC package with isolated mounting tab (collector), 3-pin configuration, and lead-free finish per JEDEC J-STD-609. Thermal interface requires flat, greased surface (R_θCS = 0.24 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Collector (C)	Electrically isolated metal tab - must be mounted to heatsink with insulating pad or ceramic washer
Pin 2	Emitter (E)	Low-inductance emitter return path - connects to source of anti-parallel diode and low-side shunt
Pin 3	Gate (G)	High-impedance MOS-controlled terminal - requires <100 nF local decoupling and controlled R_G (10 Ω typical)

Key Features

Feature	Design Value
UltraFast switching	Turn-off delay <330 ns and fall time <270 ns at 21 A enable 40 kHz hard-switching without excessive loss
Tight parameter distribution	±5% V_CE(on) and ±8% Q_g across lot - simplifies parallel IGBT design and gate driver sizing
High avalanche ruggedness	270 mJ single-pulse reverse-biased energy - sustains unclamped inductive switching during fault events
Optimized for power conversion	Lower conduction loss than MOSFETs above 10 A and lower switching loss than short-circuit-rated IGBTs

Applications

Industrial Welding Power Stage

UPS Inverter Output Stage

Use Scenario: Primary-side switch in IGBT-based inverter welders operating at 20–50 kHz with 500–1000 A output current.

IC Role / Device Role / Timing Role: Main switching element controlling transformer primary current; handles 82 A clamped inductive loads during arc initiation.

Use Value: 270 mJ avalanche energy prevents failure during repeated short-circuit weld starts; 0.77 °C/W R_θJC maintains <150°C junction under 100% duty cycle bursts.

Use Scenario: Output H-bridge stage in 3–10 kVA online UPS systems delivering pure sine-wave AC with <3% THD.

IC Role / Device Role / Timing Role: High-side/low-side switching device in full-bridge topology; commutates 21 A RMS at 50/60 Hz fundamental with high-frequency PWM carrier.

Use Value: 2.43 V V_CE(on) minimizes conduction loss at high load; 4.44 mJ E_ts enables efficient 16 kHz carrier frequency without excessive heatsink mass.

Server SMPS Front-End

Motor Drive Boost Converter

Use Scenario: Switching device in PFC boost converter for 3 kW telecom rectifiers operating at 65 kHz.

IC Role / Device Role / Timing Role: Active switch in continuous conduction mode (CCM) boost stage; handles 41 A peak input current with 960 V DC link.

Use Value: 1200 V V_CES provides margin against line surges; 86 nC Q_g allows use of standard 1 A gate drivers with minimal Miller effect.

Use Scenario: Boost switch in 7.5 kW HVAC variable-frequency drive input stage feeding 650 V DC bus.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost converter; operates at 20 kHz with 21 A average current.

Use Value: Low 13 nH internal emitter inductance suppresses voltage overshoot during turn-off; 18 pF C_res limits Miller-induced false turn-on risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N120B3	1200 V/50 A; higher Q_g (120 nC); slower turn-off (380 ns)	Better short-circuit withstand (10 µs), but higher switching loss at 40 kHz	Prefer for <20 kHz designs requiring fault ride-through over efficiency
STMicroelectronics STGW40H120DF	1200 V/40 A; integrated fast diode; lower V_CE(on) (2.1 V); higher E_off (4.2 mJ)	Eliminates external diode but increases thermal coupling between switch and diode	Prefer when diode recovery stress or layout space is critical

Compared with IXGN50N120B3 and STGW40H120DF, IRG4PH40UPBF offers lowest total switching loss at 40 kHz and best balance of conduction efficiency and gate drive simplicity - making it optimal for high-frequency SMPS and UPS where thermal management is constrained.

Availability

IRG4PH40UPBF is available at Aetrix Electronics and suitable for industrial welding power stages, UPS inverter output stages, and server SMPS front-end converters requiring stable component supply and long-term lifecycle support.

Supply support for IRG4PH40UPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's legacy UltraFast IGBT product line, designed specifically for high-efficiency, high-frequency power conversion in SMPS, UPS, and welding equipment - emphasizing low switching loss, tight parameter spread, and rugged avalanche performance.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 40 kHz?

A 10 Ω gate resistor is specified in the datasheet for characterization at 21 A and 960 V. For 40 kHz operation with 41 A peak current, a range of 8–12 Ω balances switching loss and voltage overshoot. Values above 15 Ω increase turn-off time beyond 330 ns and risk shoot-through in bridge configurations.

Can IRG4PH40UPBF replace IRG4PH40UD in existing designs?

Yes - both share identical electrical specs, TO-247AC package, and pinout. The "PbF" suffix indicates lead-free finish (RoHS-compliant), while "D" denotes legacy tin-lead plating. Thermal and switching behavior are identical; only soldering profile differs (peak 300°C for PbF vs. 240°C for SnPb).

Is an external freewheeling diode required when using IRG4PH40UPBF?

Yes - IRG4PH40UPBF does not integrate an anti-parallel diode. A fast, soft-recovery diode such as DSEP30-12A (1200 V/30 A) must be used in inductive switching applications to handle reverse current during turn-off and prevent destructive voltage spikes.

What is the safe operating area (SOA) limitation at 150°C junction temperature?

At T_J = 150°C, the SOA is limited to 10.5 A at 960 V with 10 Ω gate resistor (Fig. 12). Pulse width must remain ≤80 µs and duty factor ≤0.1% to avoid secondary breakdown. Continuous operation above 21 A requires active cooling to maintain T_J ≤125°C.

IRG4PH40UPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 41 A

Current - Collector Pulsed (Icm):: 82 A

Vce(on) (Max) @ Vge, Ic:: 3.1V @ 15V, 21A

Power - Max:: 160 W

Switching Energy:: 1.04mJ (on), 3.4mJ (off)

Input Type:: Standard

Gate Charge:: 86 nC

Td (on/off) @ 25°C:: 24ns/220ns

Test Condition:: 960V, 21A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRG4PH40UPBF FAQ

1.How can I place an order for IRG4PH40UPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PH40UPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PH40UPBF reliable?

The price and inventory of IRG4PH40UPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PH40UPBF is usually 5 days.

3.What payment methods are accepted for IRG4PH40UPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PH40UPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PH40UPBF?

IRG4PH40UPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PH40UPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PH40UPBF?

For technical support, including IRG4PH40UPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PH40UPBF requirements.

6.How does Aetrix verify that IRG4PH40UPBF is sourced from the original manufacturer or authorized distributors?

All IRG4PH40UPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PH40UPBF meets industry standards.

7.What is the process for return or replacement of IRG4PH40UPBF?

All IRG4PH40UPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PH40UPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PH40UPBF part is unused and in its original packaging.

Return procedure for IRG4PH40UPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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