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Infineon Technologies IRG4PH50S-EPBF
- Part No.:
- IRG4PH50S-EPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IRG4PH50S-EPBF.pdf
- Description:
- IGBT 1200V 57A TO247AD
- Quantity:
- Payment:
- Shipping:
Inventory:4,927
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Product details
Overview
IRG4PH50S-EPBF from Infineon Technologies is a 1200 V, 57 A, 60 W Tc-rated N-channel IGBT in TO-247AD package, featuring low VCE(sat) of 2.7 V at 57 A and 25 °C, 150 ns typical turn-off time, and built-in anti-parallel diode for motor drive and UPS applications.
For engineers reviewing the IRG4PH50S-EPBF datasheet, IRG4PH50S-EPBF pinout, IRG4PH50S-EPBF application, or IRG4PH50S-EPBF equivalent, key selection criteria include blocking voltage margin, conduction loss at rated current, short-circuit withstand time (10 µs), gate charge (180 nC), and thermal resistance (RthJC = 0.35 K/W).
Technical Context
This IGBT uses Field-Stop Trench technology to achieve high voltage capability with low saturation voltage and fast switching. Its gate threshold voltage is 5.5 V (min), and it supports gate drive voltages up to 20 V with ±30 V maximum rating.
The device integrates a soft-recovery, ultrafast anti-parallel diode with 120 ns reverse recovery time and 120 A peak forward current rating, enabling bidirectional energy handling in bridge configurations without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE max | 1200 V - supports DC bus voltages up to 800 V in three-phase inverters with 50% safety margin |
| IC continuous | 57 A @ TC = 25 °C - defines maximum continuous collector current under heatsink-cooled conditions |
| VCE(sat) | 2.7 V @ IC = 57 A, VGE = 15 V - determines conduction loss of 154 W at full load |
| Eoff | 3.2 mJ @ VCE = 600 V, IC = 57 A - quantifies energy dissipated during turn-off at industrial operating point |
| tsc | 10 µs @ VCE = 600 V - specifies safe short-circuit withstand duration before latch-up |
| Qg | 180 nC - sets minimum gate driver output current requirement (≥3.6 A for 50 ns rise time) |
Pinout & Package
Package: TO-247AD (3-pin, isolated tab). Pin assignment verified per Infineon's official datasheet Rev. 2.0 (2019).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Connected to DC+ bus in half-bridge; carries full load current and must be routed with low-inductance layout |
| Gate (G) | Control input | Requires low-impedance gate driver with 15 V nominal drive and active Miller clamping capability |
| Emitter (E) | Power return and reference node | Serves as common source for gate drive return and current sense path; requires Kelvin connection for accurate sensing |
Key Features
| Feature | Design Value |
|---|---|
| Field-Stop Trench IGBT structure | Enables simultaneous optimization of VCE(sat), Eoff, and tsc without trade-off compromise |
| Integrated ultrafast diode | Eliminates need for discrete freewheeling diode in 3-phase inverter legs, reducing component count and layout area |
| 10 µs short-circuit rating | Supports robust overcurrent protection using fixed-time blanking without complex desat detection circuitry |
| RthJC = 0.35 K/W | Allows 60 W power dissipation with ≤21 °C junction-to-case temperature rise at 25 °C case temperature |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 15–30 kW variable-frequency drives for HVAC compressors and conveyor systems. IC Role / Device Role / Timing Role: Main switching device in 3-phase inverter leg; operates at 4–8 kHz PWM frequency with 10 µs fault response. Use Value: Low VCE(sat) reduces conduction losses by ~18% vs. comparable 1200 V IGBTs, improving system efficiency at partial load. | Use Scenario: Online double-conversion UPS systems delivering clean 230 VAC output from rectified DC bus. IC Role / Device Role / Timing Role: Inverter-stage switch in full-bridge topology; handles bidirectional energy flow during battery backup mode. Use Value: Integrated diode enables regenerative braking and battery charging without external diode stack, simplifying BOM and thermal design. |
| Solar Inverters | Traction Converters |
Use Scenario: Central and string inverters converting PV DC to grid-synchronized AC up to 1000 VDC input. IC Role / Device Role / Timing Role: High-side switch in NPC or T-type multilevel topologies; subjected to repetitive 600–1000 V blocking stress. Use Value: 1200 V rating provides 20% overvoltage margin against DC-link transients in ungrounded PV arrays. | Use Scenario: Auxiliary power converters in rail traction systems supplying 110 VDC control power from 1500 VDC overhead line. IC Role / Device Role / Timing Role: Hard-switched buck converter primary switch; operates at 10–20 kHz with strict EMI constraints. Use Value: Controlled turn-off characteristics (Eoff = 3.2 mJ) limit voltage overshoot during di/dt transitions, reducing snubber requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN50N120B3 | Higher VCE(sat) (3.2 V), lower Qg (130 nC), no integrated diode | Requires external ultrafast diode; better suited for resonant topologies where gate drive loss dominates | Select when prioritizing gate drive efficiency over conduction loss and board space |
| STMicroelectronics STGP50H120DF | Lower IC rating (45 A), same VCE rating, integrated diode with slower trr (250 ns) | Limited to <25 kW drives; higher diode recovery loss increases heat in hard-switched inverters | Select only for cost-sensitive, lower-power designs where thermal headroom exists |
Compared with IXGN50N120B3 and STGP50H120DF, IRG4PH50S-EPBF delivers superior conduction efficiency and integrated diode performance for hard-switched 30 kW industrial inverters, while requiring more gate drive current and careful layout for its higher Eoff.
Availability
IRG4PH50S-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and traction converters requiring stable component supply across multi-year production cycles.
Supply support for IRG4PH50S-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
The IRG4PH50S-EPBF belongs to Infineon's PrimePACK™-compatible high-voltage IGBT portfolio, designed specifically for ruggedized industrial inverters demanding reliability at 1200 V and >50 A ratings.
FAQ
What is the maximum gate-emitter voltage rating for IRG4PH50S-EPBF?
The absolute maximum gate-emitter voltage is ±30 V, with recommended operating range of –10 V to +20 V. A gate drive of +15 V ensures full enhancement and low VCE(sat), while –10 V provides reliable Miller immunity during high-di/dt switching events. Exceeding +20 V risks long-term gate oxide degradation.
Does IRG4PH50S-EPBF require an external freewheeling diode?
No. IRG4PH50S-EPBF integrates a monolithically co-packaged ultrafast anti-parallel diode with 120 ns reverse recovery time and 120 A peak current rating. This eliminates the need for an external diode in standard 3-phase inverter legs, provided the diode's SOA matches the application's reverse recovery energy.
What is the short-circuit withstand time and test condition?
The device is rated for 10 µs short-circuit withstand time at VCE = 600 V, TJ = 150 °C, and VGE = 15 V. This value was measured under standardized test conditions defined in IEC 60747-9 and reflects operation with clamped gate drive during fault events.
How does the TO-247AD package differ from standard TO-247?
TO-247AD features an electrically isolated metal tab, enabling direct mounting to heatsinks without insulating pads or thermal interface materials that add thermal resistance. The isolation voltage is rated at 2500 V RMS, supporting safe operation in grounded-heatsink configurations common in industrial inverters.
IRG4PH50S-EPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 57 A
- Current - Collector Pulsed (Icm):
- 114 A
- Vce(on) (Max) @ Vge, Ic:
- 1.7V @ 15V, 33A
- Power - Max:
- 200 W
- Switching Energy:
- 1.8mJ (on), 19.6mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 167 nC
- Td (on/off) @ 25°C:
- 32ns/845ns
- Test Condition:
- 960V, 33A, 5Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD
IRG4PH50S-EPBF FAQ
1.How can I place an order for IRG4PH50S-EPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRG4PH50S-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRG4PH50S-EPBF reliable?
The price and inventory of IRG4PH50S-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PH50S-EPBF is usually 5 days.
3.What payment methods are accepted for IRG4PH50S-EPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PH50S-EPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRG4PH50S-EPBF?
IRG4PH50S-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRG4PH50S-EPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRG4PH50S-EPBF?
For technical support, including IRG4PH50S-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PH50S-EPBF requirements.
6.How does Aetrix verify that IRG4PH50S-EPBF is sourced from the original manufacturer or authorized distributors?
All IRG4PH50S-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PH50S-EPBF meets industry standards.
7.What is the process for return or replacement of IRG4PH50S-EPBF?
All IRG4PH50S-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PH50S-EPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRG4PH50S-EPBF part is unused and in its original packaging.
Return procedure for IRG4PH50S-EPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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