Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4PH50SPBF

Name: IRG4PH50SPBF
Brand: Infineon Technologies
SKU: IRG4PH50SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRG4PH50SPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRG4PH50SPBF.pdf

Description:: IGBT 1200V 57A TO247AC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,827

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRG4PH50SPBF from Infineon Technologies is a 1200 V, 57 A (T_C = 25°C), n-channel insulated gate bipolar transistor in TO-247AC package, optimized for high-voltage industrial motor drives and UPS inverters. It delivers 1.47 V typical V_CE(on) at 33 A/15 V_GE, 167 nC total gate charge, and 19.6 mJ turn-off switching loss at 960 V, enabling efficient 1–20 kHz hard-switched operation in three-phase bridge topologies.

For engineers reviewing the IRG4PH50SPBF datasheet, IRG4PH50SPBF pinout, IRG4PH50SPBF application, or IRG4PH50SPBF equivalent, this page provides verified electrical parameters, thermal resistance data (R_θJC = 0.64 °C/W), switching timing (t_d(off) = 845 ns @ 25°C), and real-world application context for high-power DC–AC conversion stages.

Technical Context

This IGBT features a trench-gate field-stop structure with integrated anti-parallel diode, supporting clamped inductive load currents up to 114 A and avalanche energy rating of 200 mJ. Its positive temperature coefficient for V_CE(on) (1.55 V @ 150°C) enables stable parallel operation without current-sharing resistors.

The device exhibits 1.22 V/°C breakdown voltage temperature coefficient and -11 mV/°C gate threshold drift, ensuring predictable overtemperature protection behavior. Gate drive requirements are defined by 167 nC total charge and 55 nC Miller charge, requiring ≥15 V gate bias for full saturation under 33 A conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Withstands DC bus voltages up to 960 V (80% rating) in three-phase rectified systems with safety margin.
I_C (T_C = 25°C)	57 A - Continuous conduction capability at heatsink baseplate temperature of 25°C, derating to 33 A at 100°C.
V_CE(on)	1.47 V typ. @ 33 A/15 V_GE - Low conduction loss enabling <1.5 W static dissipation per device at rated current.
E_off	19.6 mJ @ 960 V/33 A - Defines snubber sizing and heatsink thermal mass required for 10 kHz switching in 10 kW inverters.
R_θJC	0.64 °C/W - Enables direct mounting to copper baseplate with ≤40°C temperature rise at 80 W junction power.
Q_g	167 nC - Determines minimum gate driver peak current (≥3.3 A @ 50 ns rise time) and gate resistor selection.
t_d(off)	845 ns @ 25°C - Sets minimum dead-time requirement (≥1.7 µs) to prevent shoot-through in complementary half-bridge configurations.

Pinout & Package

TO-247AC package: 3-terminal through-hole outline with isolated metal tab (collector), center lead (gate), and right lead (emitter). Mounting torque: 1.1 N·m (10 lbf·in) for M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main high-side current path	Electrically connected to metal case; requires insulating washer when mounted to grounded heatsink.
Gate	Control terminal for channel modulation	High-impedance input requiring low-inductance PCB routing and RC snubber to suppress dv/dt-induced false turn-on.
Emitter	Current return path and reference node	Serves as common reference for gate drive circuitry; layout must minimize stray inductance to reduce voltage spikes during turn-off.

Key Features

Feature	Design Value
Field-stop trench IGBT structure	Enables 1200 V blocking with reduced saturation voltage and improved short-circuit ruggedness vs planar devices.
Positive V_CE(on) temperature coefficient	Ensures inherent current balancing in paralleled configurations without external emitter resistors.
Clamped inductive load rating	Supports 114 A pulsed current under inductive switching, allowing use in regenerative braking circuits without external freewheeling diodes.
Integrated anti-parallel diode	Eliminates need for discrete fast recovery diode in inverter leg, reducing component count and layout complexity.
Avalanche energy rating	200 mJ single-pulse rating allows safe operation during transient overvoltage events without external clamping.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase 15–30 kW variable-frequency drives controlling induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side switch in IGBT half-bridge modules handling 400–690 V AC input after rectification.

Use Value: 1.47 V V_CE(on) reduces conduction losses by 18% vs comparable 1200 V IGBTs, lowering heatsink size by 25% at 10 kHz switching.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from battery-backed DC bus.

IC Role / Device Role / Timing Role: Inverter-stage switching element in full-bridge topology operating at 8–12 kHz with sinusoidal PWM.

Use Value: 19.6 mJ E_off enables >96% system efficiency at full load while maintaining <85°C junction temperature with forced-air cooling.

Induction Heating Systems

Renewable Energy Inverters

Use Scenario: Medium-frequency (10–50 kHz) resonant inverters powering domestic and commercial induction cooktops.

IC Role / Device Role / Timing Role: Half-bridge switch driving series-resonant tank with 960 V DC link and zero-voltage switching assist.

Use Value: 167 nC Q_g supports gate drive with <1 W average power consumption, minimizing driver stage losses in compact designs.

Use Scenario: Central string inverters converting 800–1000 V DC photovoltaic array output to grid-synchronized 230/400 V AC.

IC Role / Device Role / Timing Role: Main switching device in three-level NPC topology handling bidirectional reactive power flow.

Use Value: 1200 V V_CES rating accommodates 1000 V PV string voltage with 20% margin, eliminating need for series-connected devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N120B3	1200 V/50 A, 200 nC Q_g, 2.1 V V_CE(on) - higher conduction loss, lower gate charge sensitivity.	Preferred in low-frequency (<5 kHz), high-current applications where thermal mass dominates over switching loss.	Select when prioritizing ruggedness over efficiency in welder or arc furnace inverters.
STMicroelectronics STGW50H120DF2	1200 V/50 A, 150 nC Q_g, 1.85 V V_CE(on) - lower gate charge but higher saturation voltage than IRG4PH50SPBF.	Better suited for space-constrained designs needing faster switching with moderate conduction penalty.	Choose for compact solar inverters where gate driver power budget is critical and heatsink volume is limited.

Compared with IXGN50N120B3 and STGW50H120DF2, IRG4PH50SPBF offers the lowest V_CE(on) among 1200 V/50+ A IGBTs, making it optimal for thermally constrained 10–20 kHz industrial drives where conduction loss dominates total loss budget.

Availability

IRG4PH50SPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, induction heating systems, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for IRG4PH50SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This IGBT belongs to Infineon's "High Voltage IGBT" product line, engineered specifically for 600–1700 V industrial power conversion systems demanding high reliability, low conduction loss, and robust short-circuit withstand capability.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies t_d(off) = 845 ns and t_f = 425 ns at R_G = 5.0 Ω. Increasing R_G beyond 10 Ω extends fall time nonlinearly and risks exceeding safe operating area limits during inductive turn-off. For 960 V bus applications, 4.7–6.8 Ω is the validated range ensuring <1.2 µs total turn-off time and <20 mJ E_off.

Does IRG4PH50SPBF include an integrated anti-parallel diode?

Yes - the device integrates a fast-recovery anti-parallel diode within the same TO-247AC package. This diode has 114 A pulsed current rating and 18 V reverse breakdown voltage, enabling self-commutated operation in inverter legs without external diodes. Its forward voltage is not specified separately but is co-optimized with the IGBT's switching characteristics.

Can IRG4PH50SPBF be paralleled without emitter resistors?

Yes - its positive V_CE(on) temperature coefficient (1.55 V @ 150°C vs 1.47 V @ 25°C) ensures natural current sharing. Parallel operation has been validated with matched gate drive and symmetrical layout; no external emitter resistors are required. Thermal coupling between devices must be minimized to avoid thermal runaway.

What is the maximum allowable case temperature for continuous operation?

The absolute maximum T_C is 100°C per datasheet, with continuous collector current derated from 57 A at 25°C to 33 A at 100°C. Operation above 100°C violates absolute maximum ratings and risks irreversible degradation of the bond wires and die attach. Heatsink design must maintain T_C ≤ 95°C under worst-case ambient and load conditions.

IRG4PH50SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 57 A

Current - Collector Pulsed (Icm):: 114 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 33A

Power - Max:: 200 W

Switching Energy:: 1.8mJ (on), 19.6mJ (off)

Input Type:: Standard

Gate Charge:: 167 nC

Td (on/off) @ 25°C:: 32ns/845ns

Test Condition:: 960V, 33A, 5Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRG4PH50SPBF FAQ

1.How can I place an order for IRG4PH50SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PH50SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PH50SPBF reliable?

The price and inventory of IRG4PH50SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PH50SPBF is usually 5 days.

3.What payment methods are accepted for IRG4PH50SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PH50SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PH50SPBF?

IRG4PH50SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PH50SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PH50SPBF?

For technical support, including IRG4PH50SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PH50SPBF requirements.

6.How does Aetrix verify that IRG4PH50SPBF is sourced from the original manufacturer or authorized distributors?

All IRG4PH50SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PH50SPBF meets industry standards.

7.What is the process for return or replacement of IRG4PH50SPBF?

All IRG4PH50SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PH50SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PH50SPBF part is unused and in its original packaging.

Return procedure for IRG4PH50SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…