Infineon Technologies IRG4PH50UDPBF

Overview

IRG4PH50UDPBF from Infineon Technologies is a 1200 V, 45 A ultrafast co-packaged IGBT with integrated HEXFRED ultra-soft-recovery anti-parallel diode in TO-247AC package. It delivers V_CE(on) = 2.78 V @ 24 A/15 V, 90 ns diode reverse recovery time at 25°C, and 3.60 mJ total switching loss at 25°C - optimized for high-frequency hard-switching up to 40 kHz in industrial motor drives and UPS inverters.

For engineers reviewing the IRG4PH50UDPBF datasheet, IRG4PH50UDPBF pinout, IRG4PH50UDPBF application, or IRG4PH50UDPBF equivalent, key selection criteria include its co-packaged diode's 164 ns trr at 125°C, 0.64 °C/W IGBT junction-to-case thermal resistance, 160 nC typical gate charge, and suitability for bridge-configured resonant converters requiring minimized snubbing.

Technical Context

This IGBT employs a trench-gate field-stop structure enabling tight parameter distribution and higher efficiency versus prior generations. Its co-packaged HEXFRED diode features ultra-soft recovery (di(rec)M/dt ≤ 120 A/µs at 25°C) and low Q_rr (260–675 nC), reducing voltage overshoot and EMI in bidirectional switching paths.

The device operates across –55°C to +150°C junction temperature range with ±20 V gate rating and supports clamped inductive load currents up to 180 A. Switching behavior is characterized by 47 ns turn-on delay and 110–170 ns turn-off delay at 25°C, scaling predictably with temperature and gate resistance.

Key Specifications

Pinout & Package

Supplied in industry-standard TO-247AC package with isolated mounting hole, flat tab, and 6.3 mm lead spacing. Thermal pad on collector terminal enables low-impedance heat transfer to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT with integrated diode applications.

Compared with IXGN50N120B3 and STGW40H120DF2, IRG4PH50UDPBF offers the lowest combined conduction–switching loss product in 24–45 A industrial inverters, with its co-packaged diode eliminating interconnect inductance critical for EMI-sensitive medical and laboratory equipment.

Availability

IRG4PH50UDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term lifecycle support.

Supply support for IRG4PH50UDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's "UltraFast CoPack" IGBT family, engineered specifically for high-efficiency, high-frequency inverter applications where integrated diode softness and tight parameter spread reduce system-level design risk.

FAQ

What is the maximum gate resistor value recommended for reliable turn-off?

Infineon specifies R_G = 5.0 Ω for characterization, with turn-off delay increasing from 110 ns to 240 ns as junction temperature rises from 25°C to 150°C. For robust noise immunity and controlled dv/dt, use 4.7–10 Ω in series with the gate driver output; values >15 Ω risk incomplete turn-off under high di/dt loads due to Miller plateau instability.

Can IRG4PH50UDPBF be paralleled for higher current capacity?

Yes - its tight V_CE(on) distribution (±5%) and positive temperature coefficient above 100°C enable stable current sharing. Use matched gate resistors (<±5% tolerance), symmetrical PCB layout, and common-source Kelvin emitter connections. Derate total current by 15% for two devices and 25% for three or more to account for thermal coupling and transient imbalance.

Does the integrated diode support reverse conduction during shoot-through fault conditions?

No - the HEXFRED diode is rated for forward conduction only (I_F = 16 A continuous, 180 A pulsed). During shoot-through, both IGBT and diode are subjected to uncontrolled high-current short-circuit stress. The device's I_LM = 180 A rating applies only to clamped inductive loads, not DC bus shorts; external protection (desaturation detection + fast shutdown) is mandatory.

What is the recommended minimum soldering temperature profile for TO-247AC mounting?

Per Infineon's packaging specification, peak solder temperature must not exceed 300°C for 10 seconds at 1.6 mm from case. Use IPC-J-STD-020-compliant reflow profile with ramp rate ≤3°C/s, preheat 150–200°C for 60–120 s, soak 200–220°C for 60–90 s, and peak at 260°C max for ≤10 s. Avoid thermal shock - allow natural cooling before mechanical handling.