Infineon Technologies IRG4PH50UPBF

Overview

IRG4PH50UPBF from Infineon (formerly International Rectifier) is a 1200 V, 45 A ultra-fast insulated gate bipolar transistor (IGBT) in TO-247AC package, featuring 2.78 V typical V_CE(on) at 24 A/15 V, 160 nC total gate charge, and optimized for hard-switching up to 40 kHz in SMPS, UPS, and arc welding inverters.

For engineers reviewing the IRG4PH50UPBF datasheet, IRG4PH50UPBF pinout, IRG4PH50UPBF application, or IRG4PH50UPBF equivalent, key selection criteria include clamped inductive load capability (180 A), junction-to-case thermal resistance (0.64 °C/W), turn-off energy (1.41 mJ @ 25°C), and lead-free TO-247AC mechanical compatibility with industrial power modules.

Technical Context

This IGBT employs a trench-gate field-stop structure enabling tight parameter distribution and reduced conduction losses versus prior generations. Its 1.20 V/°C breakdown voltage temperature coefficient and -13 mV/°C gate threshold drift support stable operation across -55°C to +150°C junction range.

Switching performance is defined by 35 ns turn-on delay, 290 ns fall time (RG = 5.0 Ω), and total switching loss of 1.94 mJ at 25°C - optimized for resonant-mode operation beyond 200 kHz and high-efficiency DC-AC conversion where MOSFET conduction loss exceeds IGBT advantage.

Key Specifications

Pinout & Package

TO-247AC package: isolated metal tab (collector), 3-pin through-hole outline with 1.6 mm lead spacing; mounting torque 1.1 N·m (10 lbf·in); soldering temperature 300°C for 10 s at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN50N120B3 and STGW40H12DF2, IRG4PH50UPBF delivers lowest combined conduction and switching loss at 24–45 A/40 kHz, making it optimal for space-constrained SMPS where thermal resistance and gate drive simplicity are critical.

Availability

IRG4PH50UPBF is available at Aetrix Electronics and suitable for industrial UPS inverters, high-frequency welding power supplies, telecom rectifier modules, and renewable energy grid-tie inverters requiring stable component supply and long-term lifecycle support.

Supply support for IRG4PH50UPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's "UltraFast" IGBT product line, engineered specifically for high-frequency power conversion systems demanding low switching loss, tight parameter consistency, and rugged clamped-inductive operation.

FAQ

What is the maximum allowable gate resistor value for reliable turn-off?

A 5.0 Ω gate resistor is specified in the datasheet for switching characterization at 25°C. Using >10 Ω increases turn-off delay to 350 ns and raises E_off to 1.78 mJ, risking thermal runaway at full load. For 150°C operation, 3.3 Ω is recommended to maintain <200 ns td(off) and keep junction temperature within 150°C limit.

Does IRG4PH50UPBF include an integrated anti-parallel diode?

No. IRG4PH50UPBF is a three-terminal IGBT without an integrated freewheeling diode. External ultrafast recovery diodes (e.g., IDP40E120, 40 A/1200 V) must be used in bridge configurations. The device's 13 nH internal emitter inductance requires careful PCB layout to minimize voltage overshoot during diode commutation.

Can this IGBT operate safely at 100% rated V_CES?

No. Absolute maximum V_CES is 1200 V, but safe operating area limits clamped inductive testing to 960 V (80% of rating). Continuous operation above 900 V requires derating current to ≤15 A at 25°C case temperature and verification of SOA curves in Figure 12 to avoid second breakdown.

What is the thermal resistance from junction to sink (R_θJS) when using standard thermal grease?

R_θJS = R_θJC + R_θCS = 0.64 + 0.24 = 0.88 °C/W. With 200 W dissipation at 25°C case, junction temperature reaches 207°C - exceeding 150°C limit. Therefore, maximum continuous power at 25°C case is 78 W (per PD @ T_C = 100°C spec), requiring heatsink design to hold T_C ≤ 75°C for full 45 A rating.