Infineon Technologies IRG4PSC71KDPBF

Overview

IRG4PSC71KDPBF from Infineon Technologies is a 600 V, 75 A, 1.8 V typical V_CE(sat) short-circuit rated IGBT in TO-247AC package, designed for high-efficiency motor drives and UPS inverters operating at 15–20 kHz switching frequency.

For engineers reviewing the IRG4PSC71KDPBF datasheet, IRG4PSC71KDPBF pinout, IRG4PSC71KDPBF application, or IRG4PSC71KDPBF equivalent, key selection criteria include short-circuit withstand time (10 µs), gate charge (210 nC), peak collector current rating (150 A), and thermal resistance R_th(jc) (0.22 °C/W).

Technical Context

This IGBT features a field-stop trench structure with soft, fast recovery anti-parallel diode, enabling low conduction and switching losses in hard-switched topologies. Its 10 µs short-circuit capability supports robust protection in industrial inverters without external desaturation sensing delay.

The device uses a standard three-terminal configuration (Collector, Gate, Emitter) with non-latched behavior and negative temperature coefficient of V_CE(sat), facilitating parallel operation up to four devices with appropriate gate drive and layout.

Key Specifications

Pinout & Package

Supplied in TO-247AC package with isolated mounting flange, 3-pin configuration, and creepage distance ≥4.5 mm for reinforced insulation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN75N60B3 and STGW75H65DFB, IRG4PSC71KDPBF offers the lowest conduction loss and integrated diode-critical for compact, cost-sensitive motor drives where board space and BOM count are constrained.

Availability

IRG4PSC71KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4PSC71KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's PrimePACK™-compatible 600 V IGBT family, engineered for high-power industrial inverters demanding ruggedness, efficiency, and thermal reliability in harsh environments.

FAQ

What is the maximum gate-emitter voltage rating for IRG4PSC71KDPBF?

The absolute maximum V_GE is ±20 V. Operation above +15 V or below –5 V risks permanent gate oxide damage. Recommended drive is +15 V for turn-on and –5 V to –8 V for active Miller clamping during turn-off to prevent false triggering.

Does IRG4PSC71KDPBF include an integrated freewheeling diode?

Yes-it integrates a soft-recovery, ultrafast anti-parallel diode with Q_rr = 3.9 µC and reverse recovery time t_rr = 220 ns, co-packaged in the same TO-247AC housing and electrically matched to the IGBT die.

Can IRG4PSC71KDPBF be paralleled with identical units?

Yes-its negative temperature coefficient of V_CE(sat) enables stable current sharing. Successful paralleling requires matched gate drive impedance (<5 Ω per unit), symmetrical PCB layout, and shared heatsink with uniform thermal interface pressure.

What is the recommended gate resistor value for 15 kHz operation?

A 15 Ω gate resistor is recommended for 15 kHz hard-switched operation, balancing E_off (3.2 mJ) and dv/dt control. Lower values (10 Ω) reduce switching loss but increase EMI; higher values (22 Ω) improve EMI but raise E_off by ~18%.