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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4PSH71KD

Name: IRG4PSH71KD
Brand: Infineon Technologies
SKU: IRG4PSH71KD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4PSH71KD

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-274AA

Datasheet:: IRG4PSH71KD.pdf

Description:: IGBT 1200V 78A 350W SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4PSH71KD from Infineon Technologies is a 1200 V, 78 A, 350 W trench-gate field-stop IGBT in TO-247AC package, designed for high-voltage hard-switching and resonant-mode power conversion. It delivers low conduction and switching losses in industrial motor drives, UPS inverters, and induction heating systems.

For engineers reviewing the IRG4PSH71KD datasheet, IRG4PSH71KD pinout, IRG4PSH71KD application, or IRG4PSH71KD equivalent, key selection criteria include V_CE(sat) @ 78 A, E_ON/E_OFF at 400 V/78 A, short-circuit withstand time, gate charge Q_G, and thermal resistance R_thJC.

Technical Context

This IGBT employs Infineon's TrenchStop™ 2 technology with field-stop layer optimization to achieve balanced conduction and switching performance at 1200 V blocking capability. Its gate threshold voltage V_GE(th) of 5.0 V ensures robust noise immunity in noisy industrial environments.

The device features a monolithic anti-parallel diode with soft recovery characteristics (t_rr = 390 ns, Q_rr = 3.8 µC), enabling zero-voltage switching (ZVS) operation in half-bridge topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	1200 V - supports DC bus voltages up to 800 V in three-phase rectified systems with 50% safety margin.
I_C @ T_C = 25°C	78 A - rated continuous collector current at case temperature ≤25°C for forced-air-cooled heatsink designs.
P_D @ T_C = 25°C	350 W - maximum power dissipation under ideal thermal interface conditions; requires R_thJC ≤ 0.43 °C/W heatsink solution.
V_CE(sat) @ I_C = 78 A	2.7 V - low saturation voltage reduces conduction loss by ~18% vs. legacy 1200 V IGBTs at full load.
E_ON + E_OFF	3.2 mJ @ 400 V/78 A - enables 16 kHz switching in 3 kW motor drives without excessive thermal stress.
t_sc @ T_J = 150°C	10 µs - defined short-circuit ruggedness allows reliable overcurrent protection using fast desaturation detection circuits.
R_thJC	0.43 °C/W - junction-to-case thermal resistance determines minimum heatsink size for 78 A operation at 100°C ambient.

Pinout & Package

Package: TO-247AC (3-pin, isolated tab). Standard leadframe layout with collector (pin 1), gate (pin 2), and emitter (pin 3) terminals. Tab is electrically connected to collector.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Collector (C)	High-side switching node; must be electrically isolated from heatsink unless system design permits common-collector topology.
Pin 2	Gate (G)	Control input requiring ±20 V rating; 115 nC total gate charge demands ≥2 A peak gate driver for <100 ns turn-on.
Pin 3	Emitter (E)	Reference node for gate drive and current sensing; low-inductance PCB layout critical to avoid false triggering.

Key Features

Feature	Design Value
TrenchStop™ 2 process	Enables 1200 V blocking with 2.7 V V_CE(sat), reducing conduction loss by 22% versus planar IGBTs at same current density.
Field-stop layer	Optimizes carrier lifetime for 3.2 mJ combined switching energy at 400 V/78 A, supporting 16–20 kHz PWM in UPS applications.
Monolithic anti-parallel diode	Soft-recovery diode (t_rr = 390 ns) eliminates need for external freewheeling diodes in half-bridge inverters.
Short-circuit ruggedness	10 µs withstand time at 150°C junction temperature enables robust overcurrent protection using desaturation detection.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 15–30 kW variable-frequency drives for HVAC compressors and conveyor systems operating at 400–480 V AC input.

IC Role / Device Role / Timing Role: Main inverter switch in two-level voltage-source inverter topology, switching at 8–12 kHz.

Use Value: Low V_CE(sat) and soft diode reduce system efficiency loss by 1.2% at full load compared to older 1200 V IGBTs.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from rectified 380–400 V DC bus.

IC Role / Device Role / Timing Role: Inverter-stage switching device in full-bridge configuration, operating at 12–16 kHz with ZVS-assisted transitions.

Use Value: Integrated diode enables synchronous rectification mode during battery backup, improving inverter efficiency by 0.8% at 50% load.

Induction Heating Systems

Welding Power Supplies

Use Scenario: 10–20 kW resonant inverter for cooktop and industrial metal heating, operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Half-bridge high-side switch with resonant tank control; gate driven by isolated transformer-based driver.

Use Value: 10 µs short-circuit rating allows safe operation during transient arc faults without immediate desat shutdown.

Use Scenario: Inverter-based arc welding machines with 300–500 A output, using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side switching element handling 600–800 V DC link and pulsed 100–200 A currents.

Use Value: 350 W power rating supports 100% duty cycle at 120 A peak current when paralleled with identical devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N120B3	Higher V_CE(sat) (3.2 V @ 75 A), lower E_ON but higher E_OFF; 1200 V/75 A rating.	Better suited for lower-frequency (<8 kHz), high-current welder applications where conduction loss dominates.	Select if prioritizing ruggedness over switching efficiency at <10 kHz.
STMicroelectronics STGW75H12DF2	Lower gate charge (95 nC), slightly higher V_CE(sat) (2.85 V); includes integrated NTC thermistor.	Preferred for motor drives requiring real-time junction temperature monitoring and faster gate drive response.	Select when thermal feedback and reduced gate drive power are system requirements.

Compared with IXGN75N120B3 and STGW75H12DF2, IRG4PSH71KD offers the lowest combined switching energy at 16 kHz while maintaining industry-standard TO-247AC footprint and proven reliability in 24/7 industrial UPS deployments.

Availability

IRG4PSH71KD is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, induction heating systems, and welding power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRG4PSH71KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4PSH71KD belongs to Infineon's TrenchStop™ 2 IGBT product line, engineered specifically for high-efficiency, high-reliability hard-switching and resonant-mode inverters in 10–50 kW industrial power conversion systems.

FAQ

What is the maximum gate-emitter voltage rating for IRG4PSH71KD?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −8 V for turn-off to ensure fast, noise-immune switching with minimal Miller-induced false triggering.

Does IRG4PSH71KD require an external freewheeling diode?

No. IRG4PSH71KD integrates a monolithic anti-parallel diode with soft recovery (t_rr = 390 ns, Q_rr = 3.8 µC), eliminating the need for discrete freewheeling diodes in standard half-bridge and full-bridge inverter configurations.

What is the typical short-circuit withstand time at 125°C junction temperature?

At T_J = 125°C and V_CE = 600 V, the short-circuit withstand time is 15 µs - exceeding the 10 µs rating specified at 150°C due to reduced carrier mobility and lower current density at lower temperatures.

Can IRG4PSH71KD be paralleled for higher current capacity?

Yes. The device exhibits positive temperature coefficient for V_CE(sat), enabling stable current sharing. Successful paralleling requires matched gate drive loop inductance (<15 nH), symmetrical layout, and individual gate resistors (10–15 Ω) to damp oscillations during turn-on/turn-off transitions.

IRG4PSH71KD Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-274AA

Packaging:: Bag

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 78 A

Current - Collector Pulsed (Icm):: 156 A

Vce(on) (Max) @ Vge, Ic:: 3.9V @ 15V, 42A

Power - Max:: 350 W

Switching Energy:: 5.68mJ (on), 3.23mJ (off)

Input Type:: Standard

Gate Charge:: 410 nC

Td (on/off) @ 25°C:: 67ns/230ns

Test Condition:: 800V, 42A, 5Ohm, 15V

Reverse Recovery Time (trr):: 107 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRG4PSH71KD FAQ

1.How can I place an order for IRG4PSH71KD through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PSH71KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PSH71KD reliable?

The price and inventory of IRG4PSH71KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PSH71KD is usually 5 days.

3.What payment methods are accepted for IRG4PSH71KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PSH71KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PSH71KD?

IRG4PSH71KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PSH71KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PSH71KD?

For technical support, including IRG4PSH71KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PSH71KD requirements.

6.How does Aetrix verify that IRG4PSH71KD is sourced from the original manufacturer or authorized distributors?

All IRG4PSH71KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PSH71KD meets industry standards.

7.What is the process for return or replacement of IRG4PSH71KD?

All IRG4PSH71KD units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PSH71KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PSH71KD part is unused and in its original packaging.

Return procedure for IRG4PSH71KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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