Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRG4PSH71UD

Part No.:
IRG4PSH71UD
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-274AA
Datasheet:
AetrixIRG4PSH71UD.pdf
Description:
IGBT 1200V 99A 350W SUPER247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,159

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRG4PSH71UD from Infineon (formerly International Rectifier) is a 1200V, 99A ultrafast IGBT with integrated HEXFRED™ antiparallel diode in Super-247 package, optimized for hard-switching up to 40kHz and resonant soft-switching up to 200kHz in industrial motor drives, UPS inverters, and induction heating systems.

For engineers reviewing the IRG4PSH71UD datasheet, IRG4PSH71UD pinout, IRG4PSH71UD application, or IRG4PSH71UD equivalent, key selection criteria include VCE(on) = 2.52V @ 70A/15V, RθJC = 0.36°C/W, Qg = 380–570nC, trr = 110–270ns, and integrated diode recovery performance under high di/dt.

Technical Context

This Generation 4 IGBT employs field-stop trench gate structure enabling tighter parameter distribution, lower conduction loss (VCE(on) typ. 2.52V), and reduced switching losses (Etot = 18.2–19.7mJ @ 70A/960V/25°C). Its integrated HEXFRED diode delivers soft reverse recovery with Qrr = 350–1300nC and di(rec)M/dt up to 230A/µs.

The device operates across -55°C to +150°C junction range, supports ±20V gate drive, and features 5.35mm creepage distance. Thermal design is enabled by low RθJC (0.36°C/W) and flat-case mounting with recommended 20N clip force.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 1200V - Withstands DC bus voltages up to 960V in 3-phase inverter topologies with 20% margin.
IC @ TC = 25°C 99A - Enables single-device use in 15–20kW motor drive stages without paralleling.
VCE(on) 2.52V @ 70A/15V - Reduces conduction loss to ~177W at full load, easing heatsink requirements.
Qg 380–570nC - Determines gate driver power demand; compatible with 2–4A peak drivers (e.g., IR2110, UCC21520).
trr / Qrr 110–270ns / 350–1300nC - Enables clean turn-off in ZVS circuits and minimizes diode-induced EMI in high-frequency inverters.
RθJC 0.36°C/W - Allows 140W dissipation at 100°C case temperature, supporting compact thermal designs.
Eoff 9.4mJ @ 70A/960V - Dominates total loss budget in hard-switched PFC and inverter legs; benefits from low-Qgc (130–200nC).

Pinout & Package

Supplied in industry-standard Super-247 package (pin-compatible with TO-247 but rated for higher power density), featuring isolated collector tab, insulated gate terminal, and emitter lead. Creepage distance increased to 5.35mm for enhanced safety in high-voltage industrial systems.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main current path input Electrically connected to metal tab; requires insulated mounting and ≥20N mechanical clamping force.
Gate (G) Control electrode High-impedance MOS-controlled terminal; requires low-inductance gate loop and RC snubber for dV/dt immunity.
Emitter (E) Main current path output & diode cathode Shared emitter node for IGBT and antiparallel diode; critical reference for gate drive return path.

Key Features

Feature Design Value
UltraFast switching Enables 40kHz hard-switching operation with Etot < 20mJ - reduces filter size and improves system efficiency in servo drives.
Integrated HEXFRED diode Soft recovery (trr ≤ 270ns @ 125°C) lowers EMI and eliminates need for external snubbers in resonant converters.
Generation 4 IGBT die Tighter VCE(on) distribution (±5%) enables reliable paralleling without current-sharing resistors in multi-kW inverters.
Super-247 package Twice TO-247 power handling in same footprint - saves PCB area and simplifies thermal layout vs. TO-264 alternatives.
Lead-free construction RoHS-compliant and halogen-free per JEDEC J-STD-020; qualified for reflow soldering up to 260°C peak.

Applications

Industrial Motor Drives Uninterruptible Power Supplies (UPS)

Use Scenario: 15–25kW variable-frequency drives controlling 3-phase AC induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Main inverter switch in 6-pulse bridge configuration; handles PWM switching at 8–16kHz with 50% duty cycle.

Use Value: Low VCE(on) and tight parameter spread reduce thermal derating and enable single-device implementation per leg.

Use Scenario: Online double-conversion UPS delivering clean 50/60Hz sine wave output with <1% THD under nonlinear loads.

IC Role / Device Role / Timing Role: Inverter-stage switching element in full-bridge topology; operates in hard-switched mode with 12–20kHz carrier frequency.

Use Value: Integrated diode with low Qrr minimizes reverse recovery loss during zero-crossing commutation, improving efficiency >94%.

Induction Heating Systems Medium-Voltage Solar Inverters

Use Scenario: 10–30kW resonant (LLC/ZVS) inverters generating 20–100kHz sinusoidal currents in cooking and metal processing coils.

IC Role / Device Role / Timing Role: Half-bridge switch operating in soft-switching mode; conducts high di/dt (>200A/µs) during zero-voltage transitions.

Use Value: Ultrafast diode recovery (trr ≤ 170ns @ 25°C) prevents voltage spikes and ensures reliable ZVS over full load range.

Use Scenario: Central string inverters converting 600–1000V DC PV arrays to grid-synchronized 3-phase AC at 50/60Hz.

IC Role / Device Role / Timing Role: Three-level NPC (neutral-point-clamped) inverter switch; handles 1200V blocking and bidirectional current flow.

Use Value: 1200V VCES rating provides 20% margin over 1000V DC link, enabling robust operation under transient overvoltage conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-inverter applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN75N120B3 1200V/75A, TO-247 package, Qg = 420nC, VCE(on) = 2.7V @ 75A - higher conduction loss, no integrated diode. Requires external fast recovery diode; suitable only where discrete diode placement is acceptable. Prefer when cost sensitivity outweighs board space constraints and thermal performance is secondary.
STMicroelectronics STGW40H120DF2 1200V/40A, TO-247 package, integrated diode, VCE(on) = 2.6V @ 40A - lower current rating, higher RθJC (0.5°C/W). Limited to ≤10kW systems; requires larger heatsink due to higher thermal resistance. Select only for lower-power designs where footprint compatibility with legacy TO-247 layouts is mandatory.

Compared with IXGN75N120B3 and STGW40H120DF2, IRG4PSH71UD delivers superior power density (99A in Super-247), lowest VCE(on), and best diode integration - making it optimal for space-constrained, high-efficiency 15–25kW industrial inverters.

Availability

IRG4PSH71UD is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, induction heating systems, and medium-voltage solar inverters requiring stable component supply and long-term production continuity.

Supply support for IRG4PSH71UD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's Generation 4 IGBT portfolio, engineered specifically for high-efficiency, high-reliability inverter applications demanding low switching loss, tight parameter tolerance, and integrated diode performance.

FAQ

What gate resistor value is recommended for IRG4PSH71UD in a 16kHz motor drive?

A 5.0Ω gate resistor is validated in the datasheet for 70A/960V switching, yielding td(on) = 46ns and tf = 220ns. For 16kHz operation, this value balances switching speed against gate oscillation risk; lower values (3.3Ω) may be used with ferrite-beaded gate traces to suppress ringing without exceeding 4A peak driver current.

Can IRG4PSH71UD replace older IRG4PHxx series devices in existing designs?

Yes - IRG4PSH71UD shares identical Super-247 footprint and pinout with IRG4PH71UD, but offers 12% lower VCE(on) and 18% lower Eoff. No layout change is needed; gate drive voltage remains compatible at 15V, though gate charge increase (380–570nC vs. 320nC) may require verifying driver peak current capability.

How does the HEXFRED diode improve EMI performance compared to standard FRDs?

The HEXFRED diode exhibits soft, non-oscillatory reverse recovery with controlled di(rec)M/dt (150–230A/µs) and low stored charge (Qrr = 350–1300nC), reducing high-frequency spectral content above 30MHz. This directly lowers conducted EMI in input filters and eliminates need for RC snubbers on diode legs in resonant converters.

What is the maximum allowable case temperature for continuous 99A operation?

Continuous 99A operation is rated only at TC = 25°C per datasheet Fig.4. At TC = 100°C, maximum continuous current drops to 50A. To sustain 99A, case temperature must remain ≤45°C - achievable with forced-air cooling (≥10CFM) and low-thermal-resistance interface materials (RθCS ≤ 0.24°C/W).

IRG4PSH71UD Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-274AA
Packaging:
Bag
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
99 A
Current - Collector Pulsed (Icm):
200 A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 70A
Power - Max:
350 W
Switching Energy:
8.8mJ (on), 9.4mJ (off)
Input Type:
Standard
Gate Charge:
380 nC
Td (on/off) @ 25°C:
46ns/250ns
Test Condition:
960V, 70A, 5Ohm, 15V
Reverse Recovery Time (trr):
110 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
SUPER-247™ (TO-274AA)

IRG4PSH71UD FAQ

1.How can I place an order for IRG4PSH71UD through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PSH71UD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PSH71UD reliable?

The price and inventory of IRG4PSH71UD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PSH71UD is usually 5 days.

3.What payment methods are accepted for IRG4PSH71UD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PSH71UD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PSH71UD?

IRG4PSH71UD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PSH71UD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PSH71UD?

For technical support, including IRG4PSH71UD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PSH71UD requirements.

6.How does Aetrix verify that IRG4PSH71UD is sourced from the original manufacturer or authorized distributors?

All IRG4PSH71UD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PSH71UD meets industry standards.

7.What is the process for return or replacement of IRG4PSH71UD?

All IRG4PSH71UD units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PSH71UD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PSH71UD part is unused and in its original packaging.

Return procedure for IRG4PSH71UD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRG4PSH71UD Tags

  • IRG4PSH71UD
  • IRG4PSH71UD PDF
  • IRG4PSH71UD Datasheet
  • IRG4PSH71UD Specifications
  • IRG4PSH71UD Images
  • Infineon Technologies
  • Infineon Technologies IRG4PSH71UD
  • Buy IRG4PSH71UD
  • IRG4PSH71UD Price
  • IRG4PSH71UD Distributor
  • IRG4PSH71UD Supplier
  • IRG4PSH71UD Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER