Infineon Technologies IRG4PSH71UDPBF

Overview

IRG4PSH71UDPBF from Infineon (formerly International Rectifier) is a 1200V, 99A ultrafast IGBT with integrated HEXFRED™ antiparallel diode in Super-247 package. It delivers 2.52V V_CE(on) at 70A/15V, 380nC total gate charge, and 18.2mJ total switching loss at 25°C - optimized for hard-switched 8–40kHz and resonant-mode up to 200kHz in industrial motor drives and UPS inverters.

For engineers reviewing the IRG4PSH71UDPBF datasheet, IRG4PSH71UDPBF pinout, IRG4PSH71UDPBF application, or IRG4PSH71UDPBF equivalent, key selection criteria include its 1200V blocking rating, 0.36°C/W junction-to-case thermal resistance, 5.35mm creepage distance, and co-packaged diode's 110ns reverse recovery time at 25°C - critical for high-efficiency, space-constrained power conversion designs.

Technical Context

This Generation 4 IGBT employs field-stop trench gate structure enabling tighter parameter distribution and lower conduction + switching losses versus prior generations. Its integrated soft-recovery diode features low Q_rr (350nC typ. at 25°C) and controlled di(rec)M/dt (150A/µs), minimizing EMI and voltage overshoot during turn-off.

The device operates across -55°C to +150°C junction temperature range with ±20V gate rating and supports clamped inductive loads up to 200A. Thermal design leverages 0.24°C/W case-to-sink resistance on greased flat surface, enabling high-power density layouts where TO-247 footprint constraints apply.

Key Specifications

Pinout & Package

Package: Super-247 (industry-benchmark 3-pin through-hole variant of TO-247 with enhanced creepage and power density). Dimensions: 15.8 × 20.2 × 4.9 mm. Creepage distance: 5.35 mm. Lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN75N120B3 and STGW100H12DL, IRG4PSH71UDPBF uniquely combines integrated diode, Super-247 thermal performance, and 1200V/99A rating - making it optimal for space-constrained, cost-sensitive industrial inverters where bill-of-material reduction and creepage compliance are primary drivers.

Availability

IRG4PSH71UDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4PSH71UDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's PrimePACK™-adjacent high-voltage IGBT portfolio, designed specifically for industrial power conversion systems demanding high reliability, low loss, and simplified thermal management in compact form factors.

FAQ

What is the maximum continuous collector current at 100°C case temperature?

The IRG4PSH71UDPBF supports 50A continuous collector current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the Super-247 package and ensures safe operation within the 140W maximum power dissipation limit at that temperature.

Does this IGBT require a negative gate voltage for reliable turn-off?

No - the device is fully compatible with 0V to +15V gate drive. Its gate threshold voltage (V_GE(th)) ranges from 3.0V to 6.0V, and gate leakage remains below ±100nA at ±20V. A 0V gate bias fully blocks conduction; negative voltage is unnecessary for stability or noise immunity.

Can the integrated diode handle full-rated forward current continuously?

Yes - the antiparallel HEXFRED™ diode supports 70A continuous forward current at T_C = 100°C and 200A pulsed current. Its V_F is 2.92V at 70A/25°C, rising to 3.7V at 150°C, enabling reliable freewheeling in inverter half-bridges without thermal runaway.

What is the recommended gate resistor value for standard 15V drive?

A 5.0Ω external gate resistor is used in the datasheet's switching characterization (Fig. 9–11). This value balances turn-on speed (46ns td(on)) and voltage overshoot suppression. For higher dv/dt immunity, 10Ω may be used - increasing td(on) to ~65ns while reducing E_on by 12% and peak gate current by 50%.