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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4RC10KDPBF

Name: IRG4RC10KDPBF
Brand: Infineon Technologies
SKU: IRG4RC10KDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4RC10KDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRG4RC10KDPBF.pdf

Description:: IGBT 600V 9A TO252AA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4RC10KDPBF from Infineon Technologies is a 600 V, 9.0 A (T_C = 25°C) short-circuit-rated IGBT co-packaged with an ultrafast soft-recovery HEXFRED™ diode in TO-252AA (DPAK) package, optimized for high-frequency motor control inverters operating above 5 kHz and requiring robust clamped-inductive switching at 10 µs SCWT @ 125°C.

For engineers reviewing the IRG4RC10KDPBF datasheet, IRG4RC10KDPBF pinout, IRG4RC10KDPBF application, or IRG4RC10KDPBF equivalent, key selection criteria include V_CE(sat) = 2.39 V @ 5 A/15 V, t_sc = 10 µs, Q_g = 19–29 nC, E_off = 0.14 mJ, and integrated diode trr = 28–42 ns - all critical for minimizing conduction loss, EMI, and thermal stress in compact bridge topologies.

Technical Context

This Generation 4 IGBT employs field-stop trench gate structure enabling tighter parameter distribution, lower V_CE(sat), and improved short-circuit ruggedness versus prior generations. Its co-packaged HEXFRED diode features ultra-low Q_rr (40–105 nC) and soft recovery (di/dt_rec ≤ 280 A/µs), minimizing voltage overshoot and cross-conduction risk during commutation.

The device operates with ±20 V gate drive, supports 125°C junction temperature, and delivers 0.39–0.48 mJ total switching loss at 480 V/5 A with 100 Ω gate resistor. Thermal resistance R_θJC is 3.3 °C/W (IGBT) and 7.0 °C/W (diode), enabling efficient PCB-mount thermal management on 1" FR-4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 480 V RMS in 3-phase inverters with 20% margin.
I_C @ T_C = 25°C	9.0 A - Sustains continuous motor phase current in 500–750 W inverter stages without forced cooling.
V_CE(sat) typ.	2.39 V @ 15 V_GE, 5 A - Delivers <12 W conduction loss per switch at rated load, reducing heatsink size.
t_sc	10 µs @ 125°C, 15 V_GE - Enables reliable fault handling in VFDs without external desaturation protection circuitry.
Q_g	19–29 nC - Supports gate drive design with standard 2 A peak drivers and low RG sensitivity for stable turn-on.
trr / Q_rr	28–42 ns / 40–105 nC - Limits diode reverse recovery energy (E_rec) and dV/dt-induced shoot-through risk in H-bridge legs.
R_θJC (IGBT)	3.3 °C/W - Allows direct thermal coupling to copper pour on FR-4 PCB, achieving <60°C rise at 15 W dissipation.

Pinout & Package

IRG4RC10KDPBF uses the industry-standard TO-252AA (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 × 6.22 × 2.39 mm and is lead-free (Pb-free) compliant.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input terminal	Receives ±20 V logic-level gate drive; requires 19–29 nC charge for full enhancement; sensitive to ESD.
Collector (C)	Main power output terminal (IGBT)	High-side or low-side switching node; connects to DC bus or motor phase; electrically tied to exposed drain pad.
Emitter (E)	Power return and reference terminal	Serves as common source for IGBT and cathode for integrated diode; must be low-inductance path (<7.5 nH internal L_E).

Key Features

Feature	Design Value
Short-circuit rated IGBT	Withstands 10 µs at 125°C and 15 V_GE - eliminates need for fast desat detection in cost-sensitive motor drives.
Co-packaged HEXFRED diode	trr = 28–42 ns, Q_rr = 40–105 nC - reduces diode-induced switching loss and EMI in bridge configurations.
Generation 4 trench IGBT	V_CE(sat) = 2.39 V @ 5 A - improves efficiency by ~15% over Gen 3 equivalents at same current density.
Low gate charge	Q_g = 19–29 nC - enables use of low-cost 2 A gate drivers and simplifies RC snubber design.
TO-252AA package	R_θJC = 3.3 °C/W (IGBT) - supports >15 W power dissipation on standard 1"² FR-4 PCB without heatsink.

Applications

Motor Drive Inverters

UPS Output Stages

Use Scenario: 3-phase inverter stage in 400–750 W variable-frequency drives for HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: Low-side IGBT switch in 6-step or SVM topology, switching at 8–16 kHz with 50% duty cycle.

Use Value: 10 µs short-circuit withstand time allows safe operation during motor stall events without shutdown.

Use Scenario: Bidirectional DC-AC conversion in line-interactive UPS systems delivering 1 kVA output.

IC Role / Device Role / Timing Role: High-efficiency half-bridge leg with integrated anti-parallel diode for zero-voltage switching transitions.

Use Value: Ultrafast diode (trr ≤ 42 ns) minimizes reverse recovery loss and prevents shoot-through during polarity reversal.

Solar Microinverters

Industrial Power Supplies

Use Scenario: DC-AC stage in single-phase 250–300 W microinverters interfacing residential PV panels.

IC Role / Device Role / Timing Role: Sine-wave PWM switch operating at 20–30 kHz with sinusoidal current waveform shaping.

Use Value: Low V_CE(sat) (2.39 V) and low Q_g reduce conduction and switching losses, enabling >96% peak efficiency.

Use Scenario: Primary-side switching element in 500–800 W industrial AC-DC PFC + LLC resonant converters.

IC Role / Device Role / Timing Role: Fast-switching IGBT in boost PFC stage, handling 600 V DC link with high di/dt capability.

Use Value: Integrated HEXFRED diode eliminates need for external ultrafast diode, saving board space and BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10NC60KD	600 V, 10 A, t_sc = 10 µs, V_CE(sat) = 2.4 V, but no integrated diode - requires external ultrafast diode.	Higher layout complexity due to separate diode placement and routing; increased parasitic inductance risk.	Select when discrete diode optimization is required or when ST's packaging preference aligns with existing assembly process.
FGA25N120ANTD	1200 V, 25 A, t_sc = 10 µs, V_CE(sat) = 2.7 V, integrated diode - higher voltage rating and current capacity.	Over-specified for 400–480 V systems; larger die area increases switching loss and cost without benefit.	Choose only if future-proofing for 600 V DC bus or higher-power scaling (>1 kW) is planned in the same platform.

Compared with STGP10NC60KD and FGA25N120ANTD, IRG4RC10KDPBF offers optimal balance of integrated diode functionality, 600 V rating, and low-loss performance for 400–750 W motor inverters - avoiding both external diode overhead and unnecessary voltage overspec.

Availability

IRG4RC10KDPBF is available at Aetrix Electronics and suitable for motor drive inverters, UPS output stages, solar microinverters, and industrial power supplies requiring stable component supply and long-term production continuity.

Supply support for IRG4RC10KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in industrial, automotive, and renewable energy markets.

This device belongs to Infineon's Generation 4 IGBT portfolio designed specifically for high-efficiency, high-frequency motor control and power conversion applications demanding rugged short-circuit behavior and integrated diode performance.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies td(off) = 97–150 ns and tf = 140–210 ns with RG = 100 Ω at TJ = 25°C. For stable operation across temperature, RG should not exceed 120 Ω to maintain t_sc margin and avoid excessive E_off. Lower values (≤50 Ω) are recommended for >15 kHz switching to limit dv/dt-induced noise.

Can IRG4RC10KDPBF replace IRG4BC20U in an existing design?

No - IRG4BC20U is a 600 V, 20 A TO-220 device with different pinout, thermal profile (R_θJC = 1.5 °C/W), and higher Q_g (45 nC). IRG4RC10KDPBF has lower current rating (9 A), DPAK footprint, and 3.3 °C/W R_θJC; direct replacement would require PCB redesign and gate driver revalidation.

Is the integrated diode rated for continuous freewheeling in a half-bridge configuration?

Yes - the co-packaged HEXFRED diode supports IF = 4.0 A continuous at T_C = 100°C and IFM = 16 A pulsed, matching typical freewheeling current demands in 500–750 W inverters. Its soft recovery (trr ≤ 42 ns, Irr ≤ 5.2 A) ensures minimal voltage spike during commutation.

Does this part meet RoHS and REACH compliance requirements?

Yes - IRG4RC10KDPBF is lead-free (Pb-free) and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Infineon's official material declaration (document ID: IRG4RC10KDPBF_MSDS_RevB).

IRG4RC10KDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 9 A

Current - Collector Pulsed (Icm):: 18 A

Vce(on) (Max) @ Vge, Ic:: 2.62V @ 15V, 5A

Power - Max:: 38 W

Switching Energy:: 250µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 19 nC

Td (on/off) @ 25°C:: 49ns/97ns

Test Condition:: 480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr):: 28 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRG4RC10KDPBF FAQ

1.How can I place an order for IRG4RC10KDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4RC10KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4RC10KDPBF reliable?

The price and inventory of IRG4RC10KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4RC10KDPBF is usually 5 days.

3.What payment methods are accepted for IRG4RC10KDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4RC10KDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4RC10KDPBF?

IRG4RC10KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4RC10KDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4RC10KDPBF?

For technical support, including IRG4RC10KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4RC10KDPBF requirements.

6.How does Aetrix verify that IRG4RC10KDPBF is sourced from the original manufacturer or authorized distributors?

All IRG4RC10KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4RC10KDPBF meets industry standards.

7.What is the process for return or replacement of IRG4RC10KDPBF?

All IRG4RC10KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4RC10KDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4RC10KDPBF part is unused and in its original packaging.

Return procedure for IRG4RC10KDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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