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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4RC10KDTRPBF

Name: IRG4RC10KDTRPBF
Brand: Infineon Technologies
SKU: IRG4RC10KDTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4RC10KDTRPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRG4RC10KDTRPBF.pdf

Description:: IGBT 600V 9A TO252AA

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Product details

Overview

IRG4RC10KDTRPBF from Infineon Technologies is a Generation 4 insulated gate bipolar transistor (IGBT) co-packaged with an ultrafast soft-recovery HEXFRED diode in TO-252AA (DPAK) package. It delivers V_CE(sat) = 2.39 V @ 5.0 A, 15 V_GE, short-circuit withstand time of 10 µs @ 125°C, and optimized switching for >5 kHz operation in motor drives and UPS inverters.

For engineers reviewing the IRG4RC10KDTRPBF datasheet, IRG4RC10KDTRPBF pinout, IRG4RC10KDTRPBF application, or IRG4RC10KDTRPBF equivalent, key selection criteria include clamped inductive load current (18 A), diode reverse recovery time (28–57 ns), total gate charge (19–29 nC), and junction-to-case thermal resistance (3.3 °C/W for IGBT).

Technical Context

This IGBT employs a trench-gate field-stop structure enabling tight parameter distribution and reduced conduction losses versus prior generations. Its integrated ultra-soft-recovery diode features low Q_rr (40–105 nC) and minimized di(rec)/dt (235–280 A/µs), directly reducing EMI and tail-current-related turn-off loss.

The device is rated for 600 V breakdown voltage with positive temperature coefficient for V_CE(sat), supporting paralleling in high-power modules. Short-circuit capability is validated at V_CC = 360 V, T_J = 125°C, V_GE = 15 V, R_G = 100 Ω, and peak collector voltage < 500 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(sat)	2.39 V typ. @ 5.0 A, 15 V_GE: enables low conduction loss in 400–600 V DC bus motor control stages
t_sc	10 µs @ 125°C: supports robust protection in hard-switched bridge legs without external desaturation detection delay
Q_g	19–29 nC: determines gate driver power requirement and influences switching speed vs. EMI trade-off
trr / Q_rr	28–57 ns / 40–105 nC: ultra-soft recovery minimizes voltage overshoot and diode-induced turn-off loss in inverter leg commutation
R_θJC (IGBT)	3.3 °C/W: defines maximum allowable case-to-ambient thermal path for 38 W dissipation at 25°C case temperature
E_ts	0.39–0.56 mJ @ 5.0 A: total switching energy sets minimum dead-time and heatsink sizing for 5–20 kHz PWM operation
V_(BR)CES	600 V min.: provides 20% margin over standard 400 V industrial DC bus, supporting surge tolerance

Pinout & Package

IRG4RC10KDTRPBF uses the industry-standard TO-252AA (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.73 mm × 10.16 mm × 2.39 mm and weighs 0.3 g.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input terminal	Receives ±20 V logic-level signal; requires 19–29 nC charge to fully turn on; sensitive to ESD
Collector (C)	High-side power output node	Connects to DC bus positive; handles up to 600 V blocking and 18 A pulsed current
Emitter (E)	Power return and reference node	Serves as common source for IGBT and anti-parallel diode; internal emitter inductance = 7.5 nH

Key Features

Feature	Design Value
Generation 4 IGBT die	Tighter V_CE(sat) distribution (±0.23 V) improves current sharing in parallel configurations
Co-packaged HEXFRED diode	Soft recovery (di(rec)/dt ≤ 280 A/µs) reduces snubber stress and EMI filter size
Short-circuit rated	Guaranteed 10 µs withstand at 125°C junction temperature without latch-up or degradation
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile; soldering temperature rated to 300°C for 10 sec at 1.6 mm from case

Applications

Motor Drive Inverter Stage

Uninterruptible Power Supply (UPS) Output Stage

Use Scenario: Three-phase 400 V AC motor drive operating at 8–16 kHz PWM frequency with 5–10 kW output.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; commutates motor phase current with synchronized anti-parallel diode freewheeling.

Use Value: 2.39 V V_CE(sat) and 0.39 mJ E_ts reduce thermal load by ~18% versus Gen 3 IGBTs at same current density.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from rectified 380–420 V DC bus.

IC Role / Device Role / Timing Role: Output inverter switch; handles bidirectional reactive power flow and harmonic-rich load currents.

Use Value: 10 µs short-circuit rating enables deterministic fault response without crowbar circuits in critical backup systems.

Solar Microinverter DC–AC Stage

Induction Heating Half-Bridge

Use Scenario: Single-phase 250–300 V DC input microinverter converting to grid-synchronized 230 V AC at 20 kHz.

IC Role / Device Role / Timing Role: Low-loss switching element in H-bridge; operates with zero-voltage switching assist via resonant tank.

Use Value: Ultra-low Q_rr (40–105 nC) prevents diode reverse recovery failure during high-frequency ZVS transitions.

Use Scenario: 20–50 kW resonant induction heater using series-resonant topology with 20–100 kHz fundamental frequency.

IC Role / Device Role / Timing Role: Main switching device in asymmetrical half-bridge; conducts high di/dt load current with minimal voltage overshoot.

Use Value: Soft-recovery diode limits di(rec)/dt to ≤280 A/µs, suppressing parasitic oscillation in high-Q tank circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + anti-parallel diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH10UD1	TO-247 package; higher I_C (10 A); longer t_sc (12 µs); higher Q_g (42 nC)	Better suited for forced-air-cooled 10–15 kW inverters requiring higher current headroom	Select when board space allows TO-247 and thermal design supports 10 A continuous rating
FGA25N120ANTD	1200 V rating; lower V_CE(sat) (2.1 V); no integrated diode; requires external ultrafast diode	Targeted at 800 V DC bus industrial drives where higher voltage margin is mandatory	Choose only if system requires 1200 V blocking and discrete diode placement is acceptable

Compared with IRG4RC10KDTRPBF, IRG4PH10UD1 offers higher current capacity but demands larger heatsinking and gate drive power, while FGA25N120ANTD trades integrated simplicity for extended voltage range and added layout complexity.

Availability

IRG4RC10KDTRPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and solar microinverters requiring stable component supply, lead-free compliance, and verified short-circuit ruggedness.

Supply support for IRG4RC10KDTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's "UltraFast IGBT" product line, engineered specifically for high-frequency inverter applications demanding low switching loss, soft recovery, and guaranteed short-circuit capability without external protection circuitry.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 15 kHz?

A 100 Ω gate resistor is validated per datasheet Fig. 9 and Fig. 11 for 5.0 A operation at 15 kHz, yielding td(off) = 97–150 ns and tf = 140–210 ns. Values above 120 Ω increase E_off disproportionately and risk shoot-through in bridge configurations due to extended fall time.

Can IRG4RC10KDTRPBF be paralleled without active current balancing?

Yes - its positive V_CE(sat) temperature coefficient (0.58 mV/°C) ensures inherent current sharing across devices at equal case temperatures. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling within ±5°C case temperature difference.

Is the integrated diode suitable for regenerative braking energy recovery?

Yes - the HEXFRED diode's ultra-soft recovery (trr = 28–57 ns, Q_rr = 40–105 nC) and low V_F (1.4–1.8 V) minimize conduction loss and reverse recovery stress during four-quadrant operation in servo and traction inverters.

What is the minimum PCB copper area required for thermal performance at 15 W dissipation?

Per AN-994, a 1" × 1" (25.4 mm × 25.4 mm) FR-4 PCB with 2 oz copper and thermal vias under the exposed drain pad achieves R_θJA ≈ 50 °C/W. At 15 W, this yields ΔT = 750°C - impractical; actual design requires external heatsink or metal-core PCB to limit junction rise to < 100°C.

IRG4RC10KDTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 9 A

Current - Collector Pulsed (Icm):: 18 A

Vce(on) (Max) @ Vge, Ic:: 2.62V @ 15V, 5A

Power - Max:: 38 W

Switching Energy:: 250µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 19 nC

Td (on/off) @ 25°C:: 49ns/97ns

Test Condition:: 480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr):: 28 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRG4RC10KDTRPBF FAQ

1.How can I place an order for IRG4RC10KDTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4RC10KDTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4RC10KDTRPBF reliable?

The price and inventory of IRG4RC10KDTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4RC10KDTRPBF is usually 5 days.

3.What payment methods are accepted for IRG4RC10KDTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4RC10KDTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4RC10KDTRPBF?

IRG4RC10KDTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4RC10KDTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4RC10KDTRPBF?

For technical support, including IRG4RC10KDTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4RC10KDTRPBF requirements.

6.How does Aetrix verify that IRG4RC10KDTRPBF is sourced from the original manufacturer or authorized distributors?

All IRG4RC10KDTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4RC10KDTRPBF meets industry standards.

7.What is the process for return or replacement of IRG4RC10KDTRPBF?

All IRG4RC10KDTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4RC10KDTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4RC10KDTRPBF part is unused and in its original packaging.

Return procedure for IRG4RC10KDTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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