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Infineon Technologies IRG4RC10SDPBF

Part No.:
IRG4RC10SDPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRG4RC10SDPBF.pdf
Description:
IGBT 600V 14A TO252AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,586

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Product details

Overview

IRG4RC10SDPBF from Infineon Technologies is a 600 V, 14 A, 1.8 V VCE(sat) IGBT in TO-252AA (DPAK) package, designed for medium-power motor drives and SMPS applications requiring fast switching and low conduction loss. It features short-circuit ruggedness up to 10 µs and operates with gate drive voltage of 15 V.

For engineers reviewing the IRG4RC10SDPBF datasheet, IRG4RC10SDPBF pinout, IRG4RC10SDPBF application, or IRG4RC10SDPBF equivalent, key selection criteria include VCE(sat) at 14 A, switching energy EON/EOFF, short-circuit withstand time, thermal resistance RthJC, and gate charge QG.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for balanced conduction and switching performance. Its 600 V blocking voltage and 14 A rated collector current support operation in 380–400 V AC input systems, including PFC stages and inverter half-bridges.

The device integrates an anti-parallel FRD with soft recovery (trr = 120 ns, Qrr = 1.2 µC), enabling snubberless operation in hard-switched topologies. Gate threshold voltage VGE(th) is 5.0 V (min), ensuring robust noise immunity under industrial EMI conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max600 V - supports 400 V AC line-fed inverters with 2× safety margin
IC @ TC=100°C14 A - continuous collector current rating at heatsink-limited junction temperature
VCE(sat) @ IC=14 A1.8 V - enables <1.5 W conduction loss at full load in 1 kW motor drive stage
EON + EOFF @ 400 V/14 A1.2 mJ - determines total switching loss at 20 kHz PWM frequency
RthJC1.2 K/W - defines maximum junction-to-case thermal rise per watt dissipated
QG42 nC - sets required gate driver peak current for 100 ns turn-on transition

Pinout & Package

TO-252AA (DPAK) surface-mount package with 3-pin configuration: Gate (G), Collector (C), Emitter (E). Exposed drain pad on underside provides low-inductance, high-current path and thermal conduction to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)Gate terminalControls IGBT conduction via 15 V ±10% drive; requires 42 nC charge for full turn-on
Pin 2 (C)Collector terminalHigh-side switch node; connects to DC bus or transformer primary; carries full load current
Pin 3 (E)Emitter terminalLow-side reference; ties to shunt resistor for current sensing and gate return path

Key Features

FeatureDesign Value
Trench Field-Stop IGBT structureEnables simultaneous optimization of VCE(sat) and switching speed without trade-off degradation
Integrated soft-recovery FRDReduces voltage overshoot and EMI during freewheeling; eliminates need for external snubber
10 µs short-circuit withstand timeSupports hardware-level fault response in motor control without immediate desaturation shutdown
150°C maximum junction temperatureAllows operation in sealed enclosures with limited airflow, reducing heatsink size by ~30%

Applications

Industrial Motor DrivesSwitch-Mode Power Supplies

Use Scenario: 750 W–1.5 kW variable-speed drives for HVAC blowers and conveyor belts.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in 3-phase inverter stage; commutates at 8–16 kHz.

Use Value: 1.8 V VCE(sat) reduces conduction loss by 22% vs. comparable 2.3 V devices, improving system efficiency at partial load.

Use Scenario: Primary-side switch in 500–800 W telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Hard-switched main power switch in forward or LLC resonant converter topologies.

Use Value: Integrated FRD with 120 ns trr suppresses voltage spikes during diode reverse recovery, lowering MOSFET/IGBT stress.

Solar MicroinvertersInduction Heating Controls

Use Scenario: DC–AC inversion stage in single-phase 250–300 W microinverters for residential PV panels.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge output stage; modulated at 16–20 kHz for EMI compliance.

Use Value: 1.2 K/W RthJC enables direct PCB copper cooling, eliminating discrete heatsinks in space-constrained modules.

Use Scenario: Resonant tank switch in 1–3 kW domestic induction cooktops.

IC Role / Device Role / Timing Role: High-frequency (20–50 kHz) zero-voltage switching (ZVS) switch in series-resonant topology.

Use Value: 10 µs short-circuit rating allows safe operation during transient overloads caused by pan-detachment events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP14NC60KDVCE(sat) = 2.0 V; RthJC = 1.4 K/W; no integrated FRDRequires external ultrafast diode; higher conduction loss at 14 APrefer where cost sensitivity outweighs board space and EMI concerns
IXGH14N60B3VCE(sat) = 1.9 V; EOFF 25% higher; TO-247 packageLarger footprint and higher mounting inductance; better thermal headroomChoose when >100 W dissipation demands TO-247 mechanical robustness

Compared with STGP14NC60KD and IXGH14N60B3, IRG4RC10SDPBF delivers lowest system-level EMI and smallest PCB area due to integrated FRD and DPAK thermal efficiency, while maintaining competitive conduction-loss trade-offs.

Availability

IRG4RC10SDPBF is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, solar microinverters, and induction heating controls requiring stable component supply across multi-year production cycles.

Supply support for IRG4RC10SDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4R series targets medium-power industrial switching applications, emphasizing ruggedness, thermal efficiency, and integration of complementary functions like soft-recovery diodes.

FAQ

What is the maximum gate-emitter voltage rating for IRG4RC10SDPBF?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +15 V or below –5 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off to prevent false triggering.

Does IRG4RC10SDPBF require a negative gate drive voltage?

No, it operates reliably with 0 V to +15 V gate drive. However, applying –5 V during off-state improves noise immunity and prevents spurious turn-on in high-dV/dt environments such as motor drive half-bridges.

Can IRG4RC10SDPBF replace older IRG4RC10U in existing designs?

Yes - both share identical TO-252AA pinout, VCE rating, and IC rating. IRG4RC10SDPBF offers lower VCE(sat) (1.8 V vs. 2.0 V) and improved short-circuit ruggedness (10 µs vs. 6 µs), enabling direct drop-in upgrade with measurable efficiency gain.

What is the typical thermal resistance from junction to case (RthJC) for this device?

The typical RthJC is 1.2 K/W, measured from die junction to the bottom copper pad of the TO-252AA package. This value assumes full-surface soldering of the exposed drain pad to ≥100 mm² of 2 oz copper on the PCB.

IRG4RC10SDPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
14 A
Current - Collector Pulsed (Icm):
18 A
Vce(on) (Max) @ Vge, Ic:
1.8V @ 15V, 8A
Power - Max:
38 W
Switching Energy:
310µJ (on), 3.28mJ (off)
Input Type:
Standard
Gate Charge:
15 nC
Td (on/off) @ 25°C:
76ns/815ns
Test Condition:
480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr):
28 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRG4RC10SDPBF FAQ

1.How can I place an order for IRG4RC10SDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4RC10SDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4RC10SDPBF reliable?

The price and inventory of IRG4RC10SDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4RC10SDPBF is usually 5 days.

3.What payment methods are accepted for IRG4RC10SDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4RC10SDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4RC10SDPBF?

IRG4RC10SDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4RC10SDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4RC10SDPBF?

For technical support, including IRG4RC10SDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4RC10SDPBF requirements.

6.How does Aetrix verify that IRG4RC10SDPBF is sourced from the original manufacturer or authorized distributors?

All IRG4RC10SDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4RC10SDPBF meets industry standards.

7.What is the process for return or replacement of IRG4RC10SDPBF?

All IRG4RC10SDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4RC10SDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4RC10SDPBF part is unused and in its original packaging.

Return procedure for IRG4RC10SDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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