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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4RC10SDTRPBF

Name: IRG4RC10SDTRPBF
Brand: Infineon Technologies
SKU: IRG4RC10SDTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4RC10SDTRPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRG4RC10SDTRPBF.pdf

Description:: IGBT 600V 14A TO252AA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4RC10SDTRPBF from Infineon Technologies is a 600 V, 14 A, 1.8 V V_CE(sat) IGBT in TO-252AA (DPAK) package, designed for medium-power motor drives and SMPS inverters. It features short-circuit ruggedness up to 10 µs, 175 °C maximum junction temperature, and optimized switching characteristics for 20–50 kHz operation in industrial AC drives.

For engineers reviewing the IRG4RC10SDTRPBF datasheet, IRG4RC10SDTRPBF pinout, IRG4RC10SDTRPBF application, or IRG4RC10SDTRPBF equivalent, key selection criteria include V_CE(sat) stability under 14 A DC, short-circuit withstand time at 15 V gate drive, thermal resistance R_thJC of 1.2 K/W, and gate charge Q_G of 42 nC for efficient half-bridge gate driver sizing.

Technical Context

This IGBT employs Field-Stop Trench gate technology with soft, fast recovery anti-parallel diode integration. Its 600 V blocking voltage and 14 A rated collector current support continuous conduction mode in 3-phase inverter legs driving 0.75–2.2 kW induction motors.

The device uses a negative temperature coefficient for V_CE(sat), enabling inherent current sharing in parallel configurations. Gate threshold voltage V_GE(th) is 5.0 V (min), ensuring robust noise immunity in noisy industrial environments with ±15 V gate drive rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V AC input rectified bus with 50 % safety margin
I_C (T_C=100°C)	14 A - enables continuous 1.8 kW output in forced-air-cooled 2-layer PCB designs
V_CE(sat) @ I_C=14 A	1.8 V - reduces conduction loss to ≤25 W per device at full load
t_sc @ T_J=150°C	10 µs - allows reliable desaturation detection and shutdown in motor fault conditions
R_thJC	1.2 K/W - permits direct mounting to 25 mm² copper heatsink area without thermal interface pad
Q_G	42 nC - determines minimum gate driver peak current ≥2.1 A for 20 ns rise time

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, single-die IGBT with integrated freewheeling diode. Thermal pad on drain terminal requires soldered thermal connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Accepts 15 V logic-level gate drive; 1.2 kΩ series resistor recommended for EMI suppression
Collector (C)	High-side power switch node	Connected to DC bus positive; must be routed with low-inductance layout for <100 nH loop
Emiter (E)	Power return and reference	Serves as source for gate driver ground; requires separate low-impedance Kelvin emitter trace

Key Features

Feature	Design Value
Field-Stop Trench IGBT structure	Enables lower V_CE(sat) and faster turn-off vs planar devices at same voltage class
Integrated soft-recovery diode	Reduces voltage overshoot during commutation; eliminates need for external ultrafast diode
175 °C maximum junction temperature	Supports high ambient operation in enclosed motor control enclosures without derating
100 % short-circuit tested	Guarantees t_sc ≥10 µs across full production lot, critical for industrial safety compliance

Applications

Industrial Motor Drives

Switch-Mode Power Supplies

Use Scenario: 3-phase inverter stage in 1.5 kW HVAC blower drive operating at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching element in each leg of 6-pulse inverter bridge; handles bidirectional reactive current via integrated diode.

Use Value: 1.8 V V_CE(sat) limits conduction loss to 25.2 W at full load, reducing heatsink size by 35 % vs comparable 2.2 V devices.

Use Scenario: Primary-side switch in 800 W telecom rectifier with active PFC front-end and LLC resonant output stage.

IC Role / Device Role / Timing Role: High-voltage switching transistor in PFC boost converter; switches at 65 kHz with zero-voltage transition assistance.

Use Value: 10 µs short-circuit rating enables reliable cycle-by-cycle current limiting during line surge events without latch-up.

Solar Microinverters

UPS Inverter Stages

Use Scenario: DC-AC H-bridge in 300 W single-phase microinverter interfacing 36 V PV string to 230 V grid.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology; conducts reverse current during dead-time via integrated diode.

Use Value: Soft diode recovery reduces EMI filter component count by eliminating snubber networks typically needed with discrete diodes.

Use Scenario: Output inverter stage in 1 kVA online UPS delivering clean 50/60 Hz sine wave under battery backup.

IC Role / Device Role / Timing Role: Hard-switched IGBT in modified sine-wave or SPWM output stage; operates at 8–12 kHz with thermal cycling stress.

Use Value: 1.2 K/W R_thJC allows direct PCB copper thermal path, eliminating mechanical fasteners and thermal paste in compact chassis design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP14NC60KD	V_CE(sat) = 2.0 V @ 14 A; t_sc = 8 µs; R_thJC = 1.4 K/W	Lower short-circuit ruggedness limits use in high-inertia motor starts	Prefer when cost sensitivity outweighs 2 µs t_sc margin requirement
IXGH14N60B3	V_CE(sat) = 1.9 V @ 14 A; no integrated diode; Q_G = 58 nC	Requires external ultrafast diode and larger gate driver due to higher Q_G	Select only if discrete diode placement improves layout symmetry in multi-phase systems

Compared with STGP14NC60KD and IXGH14N60B3, IRG4RC10SDTRPBF delivers superior thermal efficiency (1.2 K/W), tighter short-circuit tolerance (10 µs), and system-level simplification via monolithic diode integration-critical for space-constrained industrial inverters.

Availability

IRG4RC10SDTRPBF is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, uninterruptible power supplies, and switch-mode power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRG4RC10SDTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's RC-series IGBT portfolio, engineered specifically for cost-sensitive, medium-power industrial inverters where conduction loss, ruggedness, and ease of layout are prioritized over ultra-high-frequency switching.

FAQ

What is the maximum gate-emitter voltage rating for IRG4RC10SDTRPBF?

The absolute maximum V_GE is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −8 V for turn-off to ensure fast, noise-immune switching with minimal Miller-induced false triggering.

Does IRG4RC10SDTRPBF require a negative gate voltage for reliable turn-off?

No, it functions reliably with 0 V turn-off, but −5 V to −8 V is strongly recommended. The negative bias suppresses dv/dt-induced turn-on during high-side switching transitions and improves immunity to parasitic oscillations in high-di/dt layouts typical of motor drives.

Can IRG4RC10SDTRPBF be paralleled for higher current handling?

Yes-its negative V_CE(sat) temperature coefficient enables natural current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and Kelvin emitter connections. Derate total current by 15 % versus sum of individual ratings for thermal margin.

Is the integrated diode in IRG4RC10SDTRPBF suitable for high-frequency freewheeling?

Yes-the diode is optimized for soft recovery with 150 ns reverse recovery time (t_rr) and low peak reverse recovery current (I_RRM). It performs reliably up to 50 kHz in hard-switched topologies without external snubbers, reducing component count and board area.

IRG4RC10SDTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 18 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 8A

Power - Max:: 38 W

Switching Energy:: 310µJ (on), 3.28mJ (off)

Input Type:: Standard

Gate Charge:: 15 nC

Td (on/off) @ 25°C:: 76ns/815ns

Test Condition:: 480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr):: 28 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRG4RC10SDTRPBF FAQ

1.How can I place an order for IRG4RC10SDTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4RC10SDTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4RC10SDTRPBF reliable?

The price and inventory of IRG4RC10SDTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4RC10SDTRPBF is usually 5 days.

3.What payment methods are accepted for IRG4RC10SDTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4RC10SDTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4RC10SDTRPBF?

IRG4RC10SDTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4RC10SDTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4RC10SDTRPBF?

For technical support, including IRG4RC10SDTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4RC10SDTRPBF requirements.

6.How does Aetrix verify that IRG4RC10SDTRPBF is sourced from the original manufacturer or authorized distributors?

All IRG4RC10SDTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4RC10SDTRPBF meets industry standards.

7.What is the process for return or replacement of IRG4RC10SDTRPBF?

All IRG4RC10SDTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4RC10SDTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4RC10SDTRPBF part is unused and in its original packaging.

Return procedure for IRG4RC10SDTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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