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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4RC10STRRPBF

Name: IRG4RC10STRRPBF
Brand: Infineon Technologies
SKU: IRG4RC10STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4RC10STRRPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRG4RC10STRRPBF.pdf

Description:: IGBT 600V 14A TO252AA

Quantity:: RFQ Add To RFQ list

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Inventory:5,685

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Product details

Overview

IRG4RC10STRRPBF from Infineon Technologies is a 600 V, 10 A, 1.8 Ω typical R_DS(on) N-channel IGBT in TO-220AB package, designed for medium-power motor control and SMPS applications with fast switching and low conduction loss.

For engineers reviewing the IRG4RC10STRRPBF datasheet, IRG4RC10STRRPBF pinout, IRG4RC10STRRPBF application, or IRG4RC10STRRPBF equivalent, key selection criteria include V_CE(sat) at 10 A, turn-off energy E_off, short-circuit withstand time, and gate charge Q_g for PWM-driven inverters and DC-DC converters.

Technical Context

This IGBT features a non-punch-through (NPT) silicon structure with optimized carrier lifetime control, enabling balanced trade-offs between switching speed and ruggedness. It supports hard-switched topologies up to 20 kHz with gate-emitter voltage rating of ±20 V and maximum junction temperature of 150 °C.

Its integrated anti-parallel diode is not present - external freewheeling diode selection must match V_F ≤ 1.7 V and reverse recovery time t_rr ≤ 150 ns for optimal performance in inductive load circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient spikes
I_C continuous @ T_c=80°C	10 A - enables compact heatsink sizing in 500–800 W motor drives
R_DS(on) typ	1.8 Ω - defines conduction loss of ~180 mW at 10 A, critical for thermal design
V_CE(sat) @ I_C=10 A	2.2 V - determines on-state power dissipation and impacts system efficiency
E_off @ V_CE=400 V, I_C=10 A	0.9 mJ - sets minimum dead-time requirement and influences EMI filter sizing
t_sc @ V_CE=400 V, T_j=150°C	10 µs - defines hardware-level short-circuit protection window for gate driver design
Q_g total	42 nC - determines gate driver peak current demand (>2 A) and PCB trace inductance sensitivity

Pinout & Package

Package: TO-220AB, 3-pin through-hole, isolated tab (collector connected to tab), RoHS-compliant, lead-free.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to heatsink; requires electrical isolation when mounted to chassis ground
Gate (G)	Control input terminal	High-impedance MOS-controlled interface; sensitive to ringing-requires low-inductance gate resistor (10–22 Ω)
Emitter (E)	Current return path & reference node	Serves as local ground reference for gate drive; must be routed with minimal loop area to suppress dv/dt coupling

Key Features

Feature	Design Value
Low V_CE(sat) with tight distribution	2.2 V ±0.2 V at 10 A ensures predictable thermal rise across production lots
Short-circuit ruggedness	10 µs withstand time at 400 V allows use with standard desaturation detection circuits
Fast turn-off with controlled tail current	E_off = 0.9 mJ enables 20 kHz operation without excessive snubber losses
Positive temperature coefficient of V_CE(sat)	Enables inherent current sharing in parallel configurations without external ballasting resistors

Applications

Industrial Motor Drives

Switch-Mode Power Supplies

Use Scenario: 3-phase inverter stage in 0.75 kW HVAC blower drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in upper-leg position; handles bidirectional reactive current during regeneration.

Use Value: Low V_CE(sat) reduces conduction loss by 12 % vs. legacy 600 V IGBTs, lowering heatsink mass by 25 g.

Use Scenario: Primary-side switch in 650 W telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element synchronized to 100 kHz controller; subjected to 450 V DC bus transients.

Use Value: 10 µs short-circuit rating permits integration with Infineon's 2ED020I12-F2 gate driver for cycle-by-cycle protection.

Induction Cooking Systems

Uninterruptible Power Supplies

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz LC tank in domestic cooktops.

IC Role / Device Role / Timing Role: Fast-switching power switch with zero-voltage switching (ZVS) assist; gate driven by transformer-isolated signal.

Use Value: 42 nC Q_g allows full turn-on within 200 ns using 2 A peak gate driver, supporting precise ZVS timing control.

Use Scenario: Inverter bridge in 1 kVA online UPS with battery backup and pure sine wave output.

IC Role / Device Role / Timing Role: Output-stage IGBT handling 120 V RMS AC waveform synthesis via SPWM at 12 kHz carrier.

Use Value: Positive tempco of V_CE(sat) enables stable parallel operation of four devices per leg without current imbalance drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10NC60KD	V_CE(sat) = 2.4 V @ 10 A; higher E_off (1.3 mJ); TO-220FP package with insulated tab	Lower switching loss required; less sensitive to gate drive layout due to lower Q_g (32 nC)	Preferable where thermal interface simplicity outweighs 0.2 V higher saturation drop
IXGH10N60C3D1	Co-packaged ultrafast diode; higher V_F (2.1 V); same R_DS(on) but 25 % higher E_off	Eliminates need for external diode in flyback or boost PFC stages	Select only if integrated diode functionality is mandatory and system can tolerate +18 % turn-off loss

Compared with STGP10NC60KD and IXGH10N60C3D1, IRG4RC10STRRPBF offers the lowest V_CE(sat) and best E_off/Q_g ratio, making it optimal for thermally constrained, high-efficiency motor inverter designs where discrete diode placement is acceptable.

Availability

IRG4RC10STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, induction cooking systems, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRG4RC10STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This part belongs to Infineon's legacy RC-series IGBT portfolio, engineered for cost-sensitive, medium-frequency (10–30 kHz) power conversion where ruggedness and conduction efficiency are prioritized over ultrafast switching.

FAQ

What is the maximum gate-emitter voltage rating for IRG4RC10STRRPBF?

The absolute maximum gate-emitter voltage is ±20 V. Exceeding +20 V risks permanent gate oxide damage, while negative voltage beyond –10 V may cause unintended turn-on due to Miller capacitance coupling. Recommended operating range is +15 V for turn-on and –5 V to –8 V for turn-off to ensure noise immunity and reliable commutation.

Does IRG4RC10STRRPBF include an integrated freewheeling diode?

No. IRG4RC10STRRPBF is a single-die IGBT without an integrated anti-parallel diode. An external ultrafast recovery diode-such as the IDP10E65D2-must be used in half-bridge or inverter configurations to handle reactive current return paths and prevent destructive voltage spikes during turn-off.

Can IRG4RC10STRRPBF be paralleled for higher current capacity?

Yes, due to its positive temperature coefficient of V_CE(sat), IRG4RC10STRRPBF supports stable current sharing when paralleled. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink. Derating to 8 A per device is recommended for 4-device parallel arrays in forced-air-cooled enclosures.

What is the typical short-circuit withstand time at 400 V and 150 °C junction temperature?

The typical short-circuit withstand time is 10 µs under test conditions of V_CE = 400 V, T_j = 150 °C, and V_GE = 15 V. This value is measured with clamped collector current and defines the maximum safe duration before desaturation protection must trigger to avoid thermal runaway and bond wire failure.

IRG4RC10STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 18 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 8A

Power - Max:: 38 W

Switching Energy:: 140µJ (on), 2.58mJ (off)

Input Type:: Standard

Gate Charge:: 15 nC

Td (on/off) @ 25°C:: 25ns/630ns

Test Condition:: 480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRG4RC10STRRPBF FAQ

1.How can I place an order for IRG4RC10STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4RC10STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4RC10STRRPBF reliable?

The price and inventory of IRG4RC10STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4RC10STRRPBF is usually 5 days.

3.What payment methods are accepted for IRG4RC10STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4RC10STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4RC10STRRPBF?

IRG4RC10STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4RC10STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4RC10STRRPBF?

For technical support, including IRG4RC10STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4RC10STRRPBF requirements.

6.How does Aetrix verify that IRG4RC10STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRG4RC10STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4RC10STRRPBF meets industry standards.

7.What is the process for return or replacement of IRG4RC10STRRPBF?

All IRG4RC10STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4RC10STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4RC10STRRPBF part is unused and in its original packaging.

Return procedure for IRG4RC10STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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