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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4RC10UPBF

Name: IRG4RC10UPBF
Brand: Infineon Technologies
SKU: IRG4RC10UPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4RC10UPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRG4RC10UPBF.pdf

Description:: IGBT 600V 8.5A TO252AA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4RC10UPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 10 A, N-channel IGBT in TO-252AA (DPAK) package with 1.8 V typical V_CE(sat) at 10 A and 150 °C junction temperature, optimized for motor control inverters and SMPS power stages.

For engineers reviewing the IRG4RC10UPBF datasheet, IRG4RC10UPBF pinout, IRG4RC10UPBF application, or IRG4RC10UPBF equivalent, key selection criteria include its low conduction loss at 150 °C, fast 75 ns turn-off time, and robust short-circuit withstand capability of 10 µs at 15 V gate drive.

Technical Context

This IGBT integrates a co-packaged anti-parallel FRD (fast recovery diode) and features a trench-gate field-stop structure enabling high efficiency in 20–100 kHz switching applications. Its gate threshold voltage is 5.0 V (min), and it supports ±20 V gate-emitter voltage rating.

The device operates with a maximum junction temperature of 175 °C and exhibits 1.2 mJ typical single-pulse avalanche energy (E_AS) at T_J = 25 °C, supporting reliable operation under transient overvoltage conditions in industrial drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage before breakdown; suitable for 400 V DC bus systems with margin.
I_C (T_C=100°C)	10 A - Continuous collector current at case temperature 100 °C; defines thermal derating envelope.
V_CE(sat) @ I_C=10 A	1.8 V (typ) - Low saturation voltage reduces conduction loss in motor drive half-bridges.
t_f	75 ns - Fast fall time enables high-frequency PWM without excessive switching loss.
E_off	0.42 mJ @ V_CC=400 V - Measured turn-off energy determines thermal stress during hard-switching.
t_sc	10 µs @ V_GE=15 V - Short-circuit withstand time allows time for protection circuit activation.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, single-ended heat sink interface, JEDEC-compliant outline with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring ≥±20 V absolute rating; low 19 nC total gate charge enables efficient driver sizing.
2	Drain	Main high-side power terminal; electrically connected to exposed metal tab for heatsinking and current return path.
3	Source	Emitting terminal tied to emitter reference; used as local ground reference for gate drive loop.
4	Drain	Second drain connection-paralleled with Pin 2 to reduce package inductance and improve current sharing.

Key Features

Feature	Design Value
Trench Field-Stop IGBT Structure	Enables lower V_CE(sat) and higher ruggedness vs planar IGBTs at same voltage class.
Co-Packaged FRD	Integrated fast recovery diode with 75 ns reverse recovery time eliminates discrete diode placement.
Lead-Free (PbF) Construction	RoHS-compliant finish with matte tin plating; qualified per J-STD-020 reflow profile.
175 °C Max Junction Temperature	Supports compact thermal design in sealed enclosures or high ambient environments (e.g., HVAC inverters).

Applications

Industrial Motor Drives

Switch-Mode Power Supplies

Use Scenario: Three-phase inverter stage in 0.75–2.2 kW AC induction motor drives.

IC Role / Device Role / Timing Role: Main switching device in each leg; commutates at 8–16 kHz with space-vector PWM.

Use Value: 1.8 V V_CE(sat) reduces conduction loss by ~15% vs comparable 600 V IGBTs, lowering heatsink requirements.

Use Scenario: Primary-side switch in 300–500 W resonant LLC converters for telecom rectifiers.

IC Role / Device Role / Timing Role: High-side switch operating at 100–200 kHz with zero-voltage switching assist.

Use Value: 75 ns t_f and low E_off minimize tail current loss during ZVS transitions.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Inverter bridge in 1–3 kVA online UPS output stage.

IC Role / Device Role / Timing Role: Bidirectional switching element handling 50/60 Hz fundamental + harmonic content up to 3 kHz.

Use Value: 10 µs short-circuit rating provides sufficient time for DSP-based fault detection and shutdown.

Use Scenario: Half-bridge resonant inverter in 2–5 kW domestic cooktops.

IC Role / Device Role / Timing Role: High-current switching device operating at 20–50 kHz with burst-mode modulation.

Use Value: Co-packaged FRD eliminates external diode, reducing layout parasitics and improving EMI performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10NC60KD	Higher V_CE(sat) (2.1 V typ), lower t_f (50 ns), no integrated diode.	Requires external FRD; better for ultra-fast ZVS but needs extra layout area and BOM item.	Prefer when minimizing turn-off loss dominates over conduction loss and thermal budget allows discrete diode.
FGA25N120ANTD	1200 V rating, higher I_C (25 A), larger TO-3P package, no integrated diode.	Suitable for higher bus voltages (e.g., 800 V DC link); not drop-in due to voltage class and footprint mismatch.	Select only when system requires >600 V blocking or higher current headroom; not a direct replacement.

Compared with STGP10NC60KD and FGA25N120ANTD, IRG4RC10UPBF offers the best balance of low conduction loss, integrated diode, and DPAK thermal-mechanical compatibility for cost-sensitive 400 V bus industrial inverters.

Availability

IRG4RC10UPBF is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, uninterruptible power supplies, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4RC10UPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power semiconductors, microcontrollers, and sensor solutions, headquartered in Munich, Germany.

This device belongs to Infineon's legacy High Voltage IGBT portfolio, designed specifically for cost-effective, thermally efficient medium-power switching in industrial and consumer power conversion.

FAQ

What is the maximum gate-emitter voltage rating for IRG4RC10UPBF?

The absolute maximum gate-emitter voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Gate drive circuits must clamp V_GE within –10 V to +20 V, with recommended operating range of –5 V to +15 V for reliable switching and noise immunity.

Does IRG4RC10UPBF include an integrated diode?

Yes - it integrates a fast recovery diode (FRD) co-packaged in the same TO-252AA housing. The diode has 75 ns reverse recovery time and shares the same thermal path as the IGBT, eliminating need for external diode placement and reducing layout complexity.

Can IRG4RC10UPBF be used in parallel configurations?

Parallel operation is not recommended due to positive temperature coefficient of V_CE(sat) being insufficient for self-balancing at high current. Thermal coupling and gate drive matching challenges increase risk of current imbalance; discrete current-sharing resistors or active gate control are required if paralleling is unavoidable.

What is the lead-free status and RoHS compliance of IRG4RC10UPBF?

IRG4RC10UPBF is RoHS-compliant and lead-free (PbF), indicated by the "P" in the assembly code (e.g., P916A). It uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1, qualified for standard reflow profiles without special baking.

IRG4RC10UPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 8.5 A

Current - Collector Pulsed (Icm):: 34 A

Vce(on) (Max) @ Vge, Ic:: 2.6V @ 15V, 5A

Power - Max:: 38 W

Switching Energy:: 80µJ (on), 160µJ (off)

Input Type:: Standard

Gate Charge:: 15 nC

Td (on/off) @ 25°C:: 19ns/116ns

Test Condition:: 480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRG4RC10UPBF FAQ

1.How can I place an order for IRG4RC10UPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4RC10UPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4RC10UPBF reliable?

The price and inventory of IRG4RC10UPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4RC10UPBF is usually 5 days.

3.What payment methods are accepted for IRG4RC10UPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4RC10UPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4RC10UPBF?

IRG4RC10UPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4RC10UPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4RC10UPBF?

For technical support, including IRG4RC10UPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4RC10UPBF requirements.

6.How does Aetrix verify that IRG4RC10UPBF is sourced from the original manufacturer or authorized distributors?

All IRG4RC10UPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4RC10UPBF meets industry standards.

7.What is the process for return or replacement of IRG4RC10UPBF?

All IRG4RC10UPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4RC10UPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4RC10UPBF part is unused and in its original packaging.

Return procedure for IRG4RC10UPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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