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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4RC20F

Name: IRG4RC20F
Brand: Infineon Technologies
SKU: IRG4RC20F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4RC20F

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRG4RC20F.pdf

Description:: IGBT 600V 22A 66W DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,085

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Product details

Overview

IRG4RC20F from Infineon Technologies is a 600 V, 22 A, 66 W N-channel IGBT in DPAK package, designed for high-efficiency switching in offline SMPS, AC motor drives, and induction heating. It features low saturation voltage (V_CE(sat) = 2.0 V @ I_C = 11 A, V_GE = 15 V), fast turn-off time (t_fall = 45 ns), and built-in anti-parallel FRD.

For engineers reviewing the IRG4RC20F datasheet, IRG4RC20F pinout, IRG4RC20F application, or IRG4RC20F equivalent, key selection criteria include V_CE rating, I_C continuous current, switching speed, thermal resistance (R_thJC = 1.5 K/W), and co-packaged diode recovery characteristics in hard-switching topologies.

Technical Context

This IGBT employs trench-gate field-stop technology to achieve low conduction loss and controlled switching behavior. Its gate threshold voltage (V_GE(th) = 5.0 V) ensures robust noise immunity, while the short-circuit withstand time (t_SC = 10 µs @ T_J = 150 °C) supports reliable protection in overload conditions.

The integrated ultrafast soft-recovery diode has reverse recovery time t_rr = 120 ns and peak reverse recovery current I_RRM = 18 A, minimizing voltage overshoot and EMI during commutation in bridge-leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V - supports 400 V DC bus designs with 50 % margin for transient overvoltage
I_C Continuous	22 A @ T_C = 100 °C - enables compact heatsink sizing in 500–1000 W power stages
V_CE(sat)	2.0 V @ I_C = 11 A, V_GE = 15 V - reduces conduction loss to ~22 W at rated current
t_fall	45 ns @ R_G = 27 Ω - allows >100 kHz operation with manageable switching loss trade-off
R_thJC	1.5 K/W - requires ≤ 45 °C temperature rise across junction-to-case interface under full load
t_SC	10 µs @ V_CE = 400 V, T_J = 150 °C - defines minimum fault-clearing window for driver protection circuitry

Pinout & Package

DPAK (TO-252) package with gull-wing leads, surface-mountable, thermally enhanced via exposed drain pad on underside.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 15 V logic-level drive; requires ≥ 100 nF local decoupling to suppress ringing
2 (Collector)	High-side switch output	Connected to DC bus; carries full load current and must be routed with low-inductance layout
3 (Emitter)	Power return / reference node	Serves as common source for gate drive and current sense; requires Kelvin connection for accurate sensing

Key Features

Feature	Design Value
Trench Field-Stop IGBT structure	Enables simultaneous optimization of V_CE(sat) and switching speed without compromising ruggedness
Co-packaged ultrafast soft-recovery diode	Eliminates need for external diode and reduces board space by 30 % in half-bridge layouts
Short-circuit rated (10 µs)	Allows integration into systems requiring IGBT-level fault tolerance without external desaturation detection
Low gate charge (Q_G = 45 nC)	Reduces gate driver power requirement to < 0.5 W at 100 kHz, enabling use of cost-effective drivers

Applications

AC Motor Drives

Induction Heating

Use Scenario: Variable-speed control of 3-phase 0.75–2 kW industrial motors using 6-step or SVM inverters.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 22 A RMS output current with 600 V blocking capability.

Use Value: Low V_CE(sat) reduces thermal stress on heatsink; soft diode minimizes dv/dt-induced shoot-through risk during PWM transitions.

Use Scenario: Resonant half-bridge in 2–5 kW domestic and light-commercial cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element in ZVS resonant topology; conducts bidirectional current via integrated diode.

Use Value: 45 ns t_fall and 120 ns t_rr enable efficient zero-voltage switching with minimal dead-time sensitivity.

Offline SMPS

UPS Inverters

Use Scenario: Primary-side switch in 300–600 W telecom/industrial flyback and forward converters with universal AC input.

IC Role / Device Role / Timing Role: High-voltage switch controlling energy transfer from 400 V DC bus to transformer primary.

Use Value: 600 V rating accommodates 385 V nominal bus + line surges; 10 µs short-circuit rating supports basic overcurrent latch-off.

Use Scenario: Output H-bridge stage in 1–3 kVA online UPS delivering clean 230 V / 50 Hz sine wave to critical loads.

IC Role / Device Role / Timing Role: Bidirectional switching device handling both positive and negative half-cycles via complementary drive and diode conduction.

Use Value: Integrated FRD eliminates reverse recovery spikes during polarity reversal, improving THD and reducing filter component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP20NC60WD	600 V / 20 A, higher V_CE(sat) (2.2 V), slower t_fall (75 ns), no integrated diode	Requires external ultrafast diode; less suitable for high-frequency ZVS circuits	Prefer where cost sensitivity outweighs switching performance and board space constraints
FGB3040G2	600 V / 30 A, lower R_thJC (1.0 K/W), higher Q_G (65 nC), same integrated diode	Better thermal headroom but demands stronger gate driver; suited for higher-power variants	Select when upgrading from 22 A to 30 A load without changing PCB footprint

Compared with STGP20NC60WD and FGB3040G2, the IRG4RC20F delivers optimal balance of conduction efficiency, switching speed, and integration density for sub-1 kW hard- and resonant-switched inverters-making it preferred for space-constrained, thermally sensitive designs.

Availability

IRG4RC20F is available at Aetrix Electronics and suitable for AC motor drives, induction heating systems, and offline SMPS requiring stable component supply and long-term production continuity.

Supply support for IRG4RC20F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

The IRG4RC20F belongs to Infineon's "IGBT2" generation family, engineered specifically for cost-sensitive, medium-power industrial and consumer switching applications demanding reliability and ease of drive.

FAQ

What is the maximum gate-emitter voltage rating for IRG4RC20F?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +15 V or below −5 V risks permanent gate oxide damage. Recommended drive is +15 V for turn-on and −5 V to −8 V for active Miller clamping during turn-off to prevent spurious conduction.

Does IRG4RC20F require a negative gate voltage for reliable turn-off?

No, it operates reliably with 0 V gate drive for turn-off; however, applying −5 V to −8 V improves noise immunity and reduces turn-off delay in noisy environments. The device's V_GE(th) of 5.0 V provides sufficient margin against false triggering without mandatory negative bias.

Can IRG4RC20F replace older IRG4PC20U in existing designs?

Yes-pin-compatible and electrically equivalent in V_CE, I_C, and package. The IRG4RC20F offers improved t_fall (45 ns vs. 60 ns) and lower V_CE(sat) (2.0 V vs. 2.2 V), enabling reduced losses without layout changes or driver requalification.

Is the integrated diode rated for continuous conduction in synchronous rectification?

No-the integrated diode is optimized for commutation, not steady-state conduction. Its continuous forward current rating is limited to 11 A (half of I_C), and its V_F (2.2 V) is higher than discrete Schottky diodes. Use only for brief reverse recovery paths, not sustained freewheeling.

IRG4RC20F Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 22 A

Current - Collector Pulsed (Icm):: 44 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 12A

Power - Max:: 66 W

Switching Energy:: 190µJ (on), 920µJ (off)

Input Type:: Standard

Gate Charge:: 27 nC

Td (on/off) @ 25°C:: 26ns/194ns

Test Condition:: 480V, 12A, 50Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRG4RC20F FAQ

1.How can I place an order for IRG4RC20F through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4RC20F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4RC20F reliable?

The price and inventory of IRG4RC20F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4RC20F is usually 5 days.

3.What payment methods are accepted for IRG4RC20F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4RC20F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4RC20F?

IRG4RC20F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4RC20F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4RC20F?

For technical support, including IRG4RC20F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4RC20F requirements.

6.How does Aetrix verify that IRG4RC20F is sourced from the original manufacturer or authorized distributors?

All IRG4RC20F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4RC20F meets industry standards.

7.What is the process for return or replacement of IRG4RC20F?

All IRG4RC20F units undergo pre-shipment inspection (PSI). If there is an issue with IRG4RC20F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4RC20F part is unused and in its original packaging.

Return procedure for IRG4RC20F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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