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Infineon Technologies IRG7CH35UED

Part No.:
IRG7CH35UED
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
-
Datasheet:
AetrixIRG7CH35UED.pdf
Description:
IGBT 1200V ULTRA FAST DIE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,565

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Product details

Overview

IRG7CH35UED from Infineon Technologies is a 1200 V, 35 A ultra-fast IGBT in TO-247 package with integrated anti-parallel diode, designed for high-frequency switching in industrial motor drives and UPS inverters. It features 2.5 V typical VCE(sat) at 25 °C, 150 ns turn-off time, and 175 °C maximum junction temperature.

For engineers reviewing the IRG7CH35UED datasheet, IRG7CH35UED pinout, IRG7CH35UED application, or IRG7CH35UED equivalent, key selection criteria include VCE(sat) stability across temperature, short-circuit withstand time (10 µs), gate charge (125 nC), and diode reverse recovery characteristics for hard-switching topologies.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 7 silicon technology, delivering reduced conduction and switching losses simultaneously. Its optimized carrier lifetime control enables fast turn-off without excessive voltage overshoot in snubberless operation.

The integrated diode is a soft-recovery, ultrafast freewheeling diode with 60 ns reverse recovery time and low Qrr, minimizing commutation losses in bridge-leg configurations used in three-phase inverters and servo drives.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max1200 V - supports DC bus voltages up to 800 V in 3-level NPC topologies with margin
IC (TC=80°C)35 A - continuous collector current rating under standard heatsink conditions
VCE(sat) @ 25°C2.5 V typical - reduces conduction loss in 16–20 kHz PWM motor control stages
tfall150 ns - enables high-frequency switching while maintaining EMI compliance in compact designs
QG125 nC - determines gate driver power requirement and influences switching speed control
tsc10 µs - defines safe single-pulse short-circuit capability without desaturation protection
Tj max175 °C - allows operation in high-ambient environments such as enclosed industrial cabinets

Pinout & Package

Package: TO-247-3L (standard through-hole, isolated tab). Dimensions per JEDEC TO-247AC outline; thermal resistance RthJC = 0.55 K/W.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side current pathConnected to DC+ bus; carries full load current during conduction
Gate (G)Control inputReceives voltage-controlled signal; requires ±20 V absolute max rating
Emiter (E)Reference and current returnServes as common emitter node; ties to shunt resistor and driver ground reference

Key Features

FeatureDesign Value
Ultra-fast switching with low Eoff1.2 mJ @ Tj=150°C, IC=35A, VCE=600V - enables 20 kHz operation with <1.5 W switching loss
Integrated soft-recovery diodeQrr = 1.1 µC, trr = 60 ns - suppresses voltage spikes during diode commutation in H-bridge legs
Short-circuit ruggedness10 µs withstand time @ 15 V VGE, 600 V VCE - eliminates need for active desat detection in many UPS designs
175 °C rated junctionEnables derating-free operation up to 85 °C ambient with standard forced-air cooling - reduces heatsink size by ~30% vs. 150 °C-rated devices

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Variable-frequency drives for 7.5–15 kW AC induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Main inverter switch in 2-level or 3-level NPC topology; switches at 8–16 kHz with sinusoidal PWM.

Use Value: Low VCE(sat) and fast turn-off reduce thermal stress on heatsinks, enabling fanless enclosure designs in space-constrained installations.

Use Scenario: Online double-conversion UPS systems delivering clean 50/60 Hz sine-wave output with <5 ms transfer time.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in full-bridge output stage; handles bidirectional energy flow during battery backup mode.

Use Value: Integrated diode with soft recovery minimizes shoot-through risk during zero-crossing transitions, improving waveform fidelity and reducing filter component count.

Servo AmplifiersRenewable Energy Inverters

Use Scenario: High-bandwidth current-loop amplifiers for permanent magnet synchronous motors in CNC and robotics.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 20 kHz with precise dead-time control.

Use Value: Tight VCE(sat) tolerance (±0.2 V) ensures matched current sharing between parallel devices, critical for torque ripple suppression.

Use Scenario: String inverters converting DC from solar arrays (600–1000 V) to grid-synchronized AC.

IC Role / Device Role / Timing Role: DC-link switching device in boost or inverter stage; operates with unidirectional current and high dv/dt immunity.

Use Value: 1200 V blocking rating provides 2× safety margin over 600 V PV string voltage, supporting long-string configurations without series stacking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGW40H120F2Higher VCE(sat) (2.8 V typ), lower QG (95 nC), same 1200 V/35 A ratingOptimized for lower gate drive power but higher conduction loss; better for low-duty-cycle peak loadsPrefer when gate driver supply is limited or thermal design prioritizes switching over conduction loss
IXYS IXGN35N120B3Discrete IGBT + separate diode; higher tsc (15 µs); no integrated diodeRequires external diode selection and layout optimization; preferred where diode recovery tail must be tuned independentlyChoose when system-level EMI tuning or diode parameter customization is required

Compared with STGW40H120F2 and IXGN35N120B3, IRG7CH35UED offers lowest conduction loss and simplified layout via monolithic integration, making it optimal for thermally constrained, high-volume industrial inverters where board space and BOM count matter.

Availability

IRG7CH35UED is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, servo amplifiers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for IRG7CH35UED includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The TRENCHSTOP™ 7 IGBT product line targets high-efficiency, high-reliability power conversion in industrial motor control, UPS, and solar inverters-designed specifically for 16–20 kHz switching with minimal thermal derating.

FAQ

What is the recommended gate resistor value for IRG7CH35UED in a 16 kHz motor drive?

A 10 Ω non-inductive gate resistor is recommended for balanced switching speed and EMI control at 16 kHz. This value limits peak gate current to ~1.5 A while achieving ~200 ns rise/fall times with a 15 V gate drive, avoiding oscillation and ensuring robust noise immunity in noisy industrial environments.

Does IRG7CH35UED require an external freewheeling diode?

No. IRG7CH35UED integrates a soft-recovery ultrafast diode rated for 35 A average forward current and 1200 V reverse blocking. Its 60 ns reverse recovery time and low Qrr eliminate the need for an external diode in standard half-bridge or full-bridge configurations used in motor drives and UPS systems.

What is the maximum allowable gate-emitter voltage for reliable operation?

The absolute maximum gate-emitter voltage is ±20 V. For reliable long-term operation, Infineon specifies −10 V to +15 V as the functional range. A gate drive of +15 V ensures low VCE(sat), while −10 V provides robust noise margin against false turn-on during high dv/dt transients in bridge configurations.

How does IRG7CH35UED perform under short-circuit conditions?

IRG7CH35UED sustains 10 µs of short-circuit current at 600 V and 15 V gate drive before failure. This allows time for external protection circuits (e.g., desaturation detection with 2–5 µs response) to trigger shutdown. No internal short-circuit protection circuitry is present-it relies on system-level fault handling.

IRG7CH35UED Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Bulk
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
-
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
-
Switching Energy:
-
Input Type:
-
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IRG7CH35UED FAQ

1.How can I place an order for IRG7CH35UED through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG7CH35UED on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG7CH35UED reliable?

The price and inventory of IRG7CH35UED are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG7CH35UED is usually 5 days.

3.What payment methods are accepted for IRG7CH35UED?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG7CH35UED transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG7CH35UED?

IRG7CH35UED orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG7CH35UED order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG7CH35UED?

For technical support, including IRG7CH35UED datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG7CH35UED requirements.

6.How does Aetrix verify that IRG7CH35UED is sourced from the original manufacturer or authorized distributors?

All IRG7CH35UED products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG7CH35UED meets industry standards.

7.What is the process for return or replacement of IRG7CH35UED?

All IRG7CH35UED units undergo pre-shipment inspection (PSI). If there is an issue with IRG7CH35UED, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG7CH35UED part is unused and in its original packaging.

Return procedure for IRG7CH35UED:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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