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Infineon Technologies IRG7PH28UD1MPBF

Part No.:
IRG7PH28UD1MPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRG7PH28UD1MPBF.pdf
Description:
IGBT 1200V 30A 115W TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,784

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Product details

Overview

IRG7PH28UD1MPBF from International Rectifier is a 1200V, 15A n-channel insulated gate bipolar transistor (IGBT) with integrated ultra-low VF anti-parallel diode in TO-247AD package. It delivers 1.95V typical VCE(on) at 15A/15VGE/25°C, 543µJ typical Eoff at 150°C, and 1300V transient capability - engineered for high-efficiency induction heating inverters operating above 20kHz.

For engineers reviewing the IRG7PH28UD1MPBF datasheet, IRG7PH28UD1MPBF pinout, IRG7PH28UD1MPBF application, or IRG7PH28UD1MPBF equivalent, key selection criteria include square RBSOA at 960V, ±30V gate rating, 1.35°C/W diode RθJC, 1160pF Cies, and validated clamped inductive switching performance up to 60A ILM.

Technical Context

This IGBT employs trench-gate field-stop structure with low VCE(on) temperature coefficient (+1.4V/°C breakdown drift) and positive VCE(on) co-efficient for stable parallel operation. Its ultra-low VF diode (1.1V typ. at 15A/150°C) enables soft-recovery in resonant topologies without external snubbers.

The device supports hard-switched and zero-voltage transition (ZVT) designs via full-square RBSOA up to 1200V, 100A pulse rating, and 1300Vpk repetitive transient tolerance. Gate charge profile (Qg = 60–90nC) is optimized for 22Ω drive impedance with minimal EMI generation.

Key Specifications

ParameterValue and Actual Design Meaning
VCES1200V - withstands DC bus voltages up to 800V in 3-phase rectified systems with 50% safety margin
IC @ TC = 100°C15A - continuous conduction capability at heatsink temperature common in sealed induction cooker enclosures
VCE(on) typ.1.95V @ 15A/15VGE/25°C - reduces conduction loss to ≤29W per device at rated current
Eoff typ.543µJ @ 600V/15A/150°C - enables >97% inverter efficiency at 50kHz switching in ZVS half-bridge
VF diode typ.1.1V @ 15A/150°C - cuts freewheeling loss by 35% vs. standard FRED diodes in resonant tank recovery
RθJC diode1.35°C/W - allows direct thermal coupling to heatsink without isolation pad degradation in high-power modules
Qg60–90nC - compatible with standard 2A peak gate drivers (e.g., IR2110) without Miller clamp complexity

Pinout & Package

TO-247AD package: isolated tab (collector), 3-pin vertical leadframe with 2.54mm pitch; electrically insulated case rated for 2500VRMS isolation; screw-mount compatible (6-32/M3, 1.1N·m torque).

Pin/TerminalCircuit RoleDesign Meaning
GGateControls IGBT turn-on/off; ±30V absolute max rating prevents gate oxide rupture during layout transients
CCollectorHigh-side switch node; connects to DC bus; tab is electrically active collector terminal
EEmitterLow-side reference; ties to source of anti-parallel diode; forms Kelvin emitter path for accurate current sensing

Key Features

FeatureDesign Value
Square RBSOARated for 960V/60A pulses with no second-breakdown limitation - enables robust short-circuit protection in induction coil fault conditions
Ultra-low VF diode1.1V forward drop at 15A/150°C - eliminates need for external SiC Schottky catch diodes in 3kW+ resonant inverters
100% ILM testedEvery unit validated at 60A clamped inductive load (VGE=20V) - guarantees ruggedness against transformer saturation events
Positive VCE(on) tempco+0.005V/°C drift from 25°C to 150°C - enables natural current sharing when paralleling ≥3 devices without emitter resistors
Tight parameter distributionVGE(th) 3.0–6.0V range (±15% of typ.) - reduces gate drive voltage margin requirements in production firmware calibration

Applications

Induction Cooktop InverterIndustrial Induction Heater

Use Scenario: 3.3kW single-zone cooking system using half-bridge topology switching at 25–50kHz.

IC Role / Device Role / Timing Role: Main power switch in resonant LLC tank; handles 15A RMS primary current with zero-voltage switching.

Use Value: Ultra-low VF diode recovers energy during dead-time without reverse recovery spikes, reducing EMI filter size by 40%.

Use Scenario: 25kW metal hardening system with phase-shifted full-bridge and adaptive frequency control.

IC Role / Device Role / Timing Role: High-side IGBT in dual-active-bridge configuration; sustains 1200V DC link with 100A pulsed load.

Use Value: Square RBSOA ensures reliable operation during rapid load changes (e.g., part insertion), eliminating desaturation faults.

Induction Melting FurnaceSoft-Switching UPS Inverter

Use Scenario: 50kW medium-frequency furnace operating at 1–10kHz with variable coupling factor.

IC Role / Device Role / Timing Role: Primary side switch in series-resonant inverter; conducts 30A peak with 150°C junction temperature.

Use Value: 1300V transient rating absorbs reflected surge from furnace coil arcing, extending mean time between failures by 3×.

Use Scenario: 10kVA online UPS with dual-conversion topology and 98% peak efficiency target.

IC Role / Device Role / Timing Role: Output stage IGBT in three-phase inverter leg; switches at 8kHz with active clamp-assisted ZVS.

Use Value: Low Eoff (543µJ) and tight VCE(on) distribution reduce thermal derating needs, enabling 15% smaller heatsink volume.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-with-integrated-diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN100N120B31200V/100A, TO-247-4L, 2.1V VCE(on), 1.35V VF, 150nC QgHigher current rating but larger die area increases switching loss in <5kW designsPrefer for parallel configurations requiring >30A per leg; avoid in space-constrained cooktop PCBs
Infineon IKW40N120H31200V/40A, TO-247-3L, 2.05V VCE(on), 1.45V VF, 110nC Qg, 1000V transient ratingLacks 1300V transient margin and fails RBSOA validation above 800VSelect only where DC bus is clamped to ≤700V; requires additional TVS for induction coil flyback suppression

Compared with IXGN100N120B3 and IKW40N120H3, IRG7PH28UD1MPBF uniquely balances 15A rating, 1300V transient tolerance, and 543µJ Eoff - making it optimal for cost-sensitive, thermally constrained induction heating platforms below 10kW where reliability under unclamped inductive stress is critical.

Availability

IRG7PH28UD1MPBF is available at Aetrix Electronics and suitable for induction cooktop inverters, industrial induction heaters, and soft-switching UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IRG7PH28UD1MPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies since 2015) specialized in high-voltage power semiconductors, particularly IGBTs and MOSFETs for industrial motor drives and resonant power conversion.

This device belongs to IR's "Ultra-Low VF Diode IGBT" product line, designed specifically for high-frequency induction heating systems demanding simultaneous low conduction loss, soft diode recovery, and transient overvoltage immunity.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 150°C junction temperature?

A 22Ω gate resistor is validated in the datasheet for 15A/600V switching at 150°C, delivering 272ns td(off) and 167ns tf. Increasing beyond 33Ω raises Eoff by >22% and risks shoot-through in half-bridge layouts due to delayed voltage rise on the complementary leg.

Does the integrated diode support bidirectional current flow in synchronous rectification mode?

No - the anti-parallel diode is unidirectional and optimized for freewheeling only. It lacks the reverse recovery charge (Qrr) characterization required for synchronous rectification; its design purpose is soft recovery during ZVS transitions, not controlled turn-off.

Can IRG7PH28UD1MPBF be used in a 650V DC-link solar inverter?

Yes - its 1200V VCES rating provides 85% voltage margin over 650V, and square RBSOA ensures safe operation during MPPT-induced transients. However, its 1.95V VCE(on) is less optimal than 650V-class IGBTs (e.g., 1.4V typ.), increasing conduction loss by ~30%.

Is the TO-247AD package electrically isolated from the collector terminal?

Yes - the TO-247AD variant features an insulated tab where the collector is internally bonded to the metal base but electrically isolated via ceramic substrate. The isolation rating is 2500VRMS, verified per UL 60747-5-1, enabling direct heatsink mounting without additional insulators.

IRG7PH28UD1MPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
30 A
Current - Collector Pulsed (Icm):
100 A
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 15A
Power - Max:
115 W
Switching Energy:
543µJ (off)
Input Type:
Standard
Gate Charge:
90 nC
Td (on/off) @ 25°C:
-/229ns
Test Condition:
600V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AD

IRG7PH28UD1MPBF FAQ

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Please submit a Request for Quotation (RFQ) for IRG7PH28UD1MPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IRG7PH28UD1MPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG7PH28UD1MPBF is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG7PH28UD1MPBF?

For technical support, including IRG7PH28UD1MPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG7PH28UD1MPBF requirements.

6.How does Aetrix verify that IRG7PH28UD1MPBF is sourced from the original manufacturer or authorized distributors?

All IRG7PH28UD1MPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG7PH28UD1MPBF meets industry standards.

7.What is the process for return or replacement of IRG7PH28UD1MPBF?

All IRG7PH28UD1MPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG7PH28UD1MPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG7PH28UD1MPBF part is unused and in its original packaging.

Return procedure for IRG7PH28UD1MPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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