Infineon Technologies IRG7PH30K10PBF
- Part No.:
- IRG7PH30K10PBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IRG7PH30K10PBF.pdf
- Description:
- IGBT 1200V 33A 210W TO247AC
- Quantity:
- Payment:

- Shipping:

Inventory:5,817
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Product details
Overview
IRG7PH30K10PBF from Infineon Technologies is a 1200 V, 23 A (TC = 100°C) trench-gate field-stop IGBT in TO-247AC package, optimized for high-voltage industrial motor drives and UPS inverters. It delivers typ. VCE(on) = 2.05 V at 9.0 A/15 V/25°C, tSC ≥ 10 µs at 150°C, and RθJC = 0.70 °C/W - enabling robust 175°C junction operation with square RBSOA and clamped inductive switching capability.
For engineers reviewing the IRG7PH30K10PBF datasheet, IRG7PH30K10PBF pinout, IRG7PH30K10PBF application, or IRG7PH30K10PBF equivalent, key selection criteria include short-circuit withstand time, VCE(on) temperature coefficient, gate charge profile (Qg = 45–68 nC), RBSOA boundary at 175°C, and thermal resistance for heatsink-limited designs.
Technical Context
This IGBT employs trench-gate and field-stop layer architecture to achieve low conduction loss while maintaining rugged short-circuit SOA. Its positive VCE(on) temperature coefficient ensures stable current sharing in parallel configurations, and its 10 µs short-circuit rating is validated at VCC = 600 V, TJ = 150°C, RG = 22 Ω.
The device features full square reverse-bias SOA up to 960 V with VGE = +20 V to 0 V, and exhibits tight parameter distribution across production lots - critical for high-reliability inverter stages where gate drive margin and thermal runaway prevention are design priorities.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 1200 V - Withstands DC bus voltages up to 960 V in 3-phase rectified systems with 20% safety margin. |
| IC @ TC = 100°C | 23 A - Continuous output current capability under typical heatsink-limited industrial operating conditions. |
| VCE(on) typ. | 2.05 V @ 9.0 A, 15 V, 25°C - Directly determines conduction loss (Pcond ≈ 18.5 W at rated current) and thermal load. |
| tSC | ≥10 µs @ VCC = 600 V, TJ = 150°C - Enables reliable desaturation-based protection without false triggering. |
| Qg | 45–68 nC - Defines gate driver peak current requirement (e.g., >3 A for 15 ns rise time with 22 Ω gate resistor). |
| RθJC | 0.70 °C/W - Sets minimum heatsink thermal resistance needed to maintain TJ ≤ 175°C at PD = 110 W. |
| Eoff | 380–600 µJ @ 9.0 A, 600 V, 25°C - Key input for calculating switching loss contribution at 1–20 kHz PWM frequencies. |
Pinout & Package
Package: TO-247AC - isolated metal tab, single-in-line 3-pin through-hole power package with 0.70 °C/W junction-to-case thermal resistance and 1.1 N·m mounting torque specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives voltage-controlled turn-on signal; requires ±30 V absolute max rating and 45–68 nC total charge for full enhancement. |
| C (Collector) | High-side power terminal | Carries main switched current; electrically connected to metal tab - must be insulated from heatsink unless common-emitter configuration permits. |
| E (Emitter) | Power return / reference node | Serves as source of gate drive return path and current sense reference; low-inductance layout essential for stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(on) trench IGBT technology | 2.05 V typ. at 9 A/25°C enables <19 W conduction loss at rated current - reducing heatsink size and system cost. |
| 10 µs short-circuit SOA | Validated at 600 V, 150°C junction, 22 Ω gate resistor - supports robust overcurrent protection without external crowbar circuits. |
| Square RBSOA | Full-rated voltage/current capability under reverse-biased gate conditions - prevents latch-up during transient overvoltage events. |
| Positive VCE(on) temp. coefficient | Ensures inherent current balancing in paralleled devices - eliminates need for emitter resistors or active current-sharing control. |
| 100% ILM testing | Every unit tested for clamped inductive load current (36 A @ VGE = 20 V) - guarantees minimum short-circuit ruggedness across lot. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: Three-phase inverter stage converting DC bus (700–900 V) to variable-frequency AC for 5–30 kW induction motors. IC Role / Device Role / Timing Role: Main switching element in each leg; operates at 2–8 kHz with precise dead-time control to prevent shoot-through. Use Value: 10 µs short-circuit withstand time allows safe detection and shutdown during winding faults; square RBSOA prevents failure during regenerative braking transients. |
Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output during grid outage, with battery-backed DC link. IC Role / Device Role / Timing Role: Inverter switch handling bidirectional energy flow between DC link and AC output transformer; gated at 4–16 kHz. Use Value: Tight VCE(on) distribution ensures consistent thermal loading across parallel devices; 175°C max junction rating supports compact, fanless enclosure designs. |
| Solar Photovoltaic Inverters | Induction Heating Systems |
|
Use Scenario: Central or string inverter DC-AC stage interfacing 600–1000 V PV arrays to utility grid via LCL filter. IC Role / Device Role / Timing Role: High-side switch in NPC or T-type three-level topology; commutated with soft-switching techniques. Use Value: Low Qgc/Qge ratio (≈2.3:1) improves Miller immunity; 2.05 V VCE(on) reduces conduction loss in high-duty-cycle MPPT operation. |
Use Scenario: Resonant half-bridge inverter driving series-tuned LC tank at 20–100 kHz for metal melting or surface hardening. IC Role / Device Role / Timing Role: Hard-switched power switch operating near zero-voltage switching boundary; subjected to high di/dt and voltage overshoot. Use Value: 0.70 °C/W RθJC enables direct-mount heatsinking for rapid thermal response; 1200 V VCES accommodates 2× DC bus + 30% ringing margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN50N120B3 | 1200 V, 50 A, Qg = 125 nC, RθJC = 0.35 °C/W, tSC = 10 µs - higher current rating but larger gate drive demand. | Better suited for higher-power (>15 kW) motor drives requiring lower conduction loss at >30 A, but less optimal for space-constrained UPS modules. | Select when system requires >30 A continuous current and can support >5 A peak gate drive; verify gate driver slew rate compatibility. |
| STMicroelectronics STGW40H120F2 | 1200 V, 40 A, VCE(on) = 2.1 V, Qg = 52 nC, tSC = 6 µs - slightly higher VCE(on), shorter SC rating, same package. | Acceptable for non-critical UPS or solar inverters where 6 µs SC tolerance suffices; not recommended for high-reliability industrial drives. | Choose for cost-sensitive designs where 6 µs SC withstand is acceptable and gate drive resources match 52 nC requirement. |
Compared with IXGN50N120B3 and STGW40H120F2, IRG7PH30K10PBF offers the best balance of gate drive efficiency (moderate Qg), proven 10 µs short-circuit robustness, and thermal performance in TO-247AC - making it ideal for mid-power industrial inverters where reliability and layout simplicity are prioritized over raw current rating.
Availability
IRG7PH30K10PBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar photovoltaic inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for IRG7PH30K10PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
This device belongs to Infineon's PrimePACK™-compatible high-voltage IGBT portfolio, designed specifically for rugged, medium-power industrial inverters demanding high reliability, thermal stability, and ease of paralleling.
FAQ
What is the maximum gate-emitter voltage rating for IRG7PH30K10PBF?
The absolute maximum continuous gate-to-emitter voltage is ±30 V, with transient spikes limited by gate oxide integrity. Operation above ±20 V risks accelerated gate oxide degradation; standard drive uses +15 V turn-on and –5 V to –15 V turn-off to ensure fast, noise-immune switching and prevent Miller-induced false turn-on.
Does IRG7PH30K10PBF include an integrated anti-parallel diode?
No - IRG7PH30K10PBF is a discrete IGBT die in TO-247AC package with no monolithically integrated freewheeling diode. External ultrafast or SiC Schottky diodes must be used in anti-parallel configuration for inductive load commutation, selected for matching reverse recovery characteristics and voltage rating.
How is the 10 µs short-circuit rating validated?
The 10 µs rating is measured per JEDEC JESD22-A110 under controlled conditions: VCC = 600 V, TJ = 150°C, RG = 22 Ω, gate driven from +15 V to 0 V, with clamped inductive load. Each unit undergoes 100% ILM screening at 36 A, confirming minimum short-circuit ruggedness before shipment.
Can IRG7PH30K10PBF be paralleled reliably without emitter resistors?
Yes - its positive VCE(on) temperature coefficient (2.56 V at 150°C vs. 2.05 V at 25°C) ensures self-balancing current distribution. Parallel operation requires matched gate drive loop inductance, symmetrical PCB layout, and identical heatsink contact pressure - but emitter resistors are unnecessary and counterproductive to efficiency.
IRG7PH30K10PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- Trench
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 33 A
- Current - Collector Pulsed (Icm):
- 27 A
- Vce(on) (Max) @ Vge, Ic:
- 2.35V @ 15V, 9A
- Power - Max:
- 210 W
- Switching Energy:
- 530µJ (on), 380µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 45 nC
- Td (on/off) @ 25°C:
- 14ns/110ns
- Test Condition:
- 600V, 9A, 22Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRG7PH30K10PBF FAQ
1.How can I place an order for IRG7PH30K10PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRG7PH30K10PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRG7PH30K10PBF reliable?
The price and inventory of IRG7PH30K10PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG7PH30K10PBF is usually 5 days.
3.What payment methods are accepted for IRG7PH30K10PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG7PH30K10PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRG7PH30K10PBF?
IRG7PH30K10PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRG7PH30K10PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRG7PH30K10PBF?
For technical support, including IRG7PH30K10PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG7PH30K10PBF requirements.
6.How does Aetrix verify that IRG7PH30K10PBF is sourced from the original manufacturer or authorized distributors?
All IRG7PH30K10PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG7PH30K10PBF meets industry standards.
7.What is the process for return or replacement of IRG7PH30K10PBF?
All IRG7PH30K10PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG7PH30K10PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRG7PH30K10PBF part is unused and in its original packaging.
Return procedure for IRG7PH30K10PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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