Infineon Technologies IRG7PH35UDPBF

Overview

IRG7PH35UDPBF from Infineon Technologies is a 1200 V, 20 A nominal n-channel insulated gate bipolar transistor (IGBT) with integrated ultrafast soft-recovery anti-parallel diode in TO-247AC package. It delivers 1.9 V typical V_CE(on) at 20 A/15 V_GE, 150 °C max junction temperature, and 85–130 nC total gate charge - optimized for high-efficiency, medium-frequency switching in solar inverters and UPS systems.

For engineers reviewing the IRG7PH35UDPBF datasheet, IRG7PH35UDPBF pinout, IRG7PH35UDPBF application, or IRG7PH35UDPBF equivalent, key selection criteria include RBSOA robustness, clamped inductive load capability (I_LM = 80 A), diode reverse recovery energy (E_rec = 790 µJ at 150 °C), and thermal resistance (R_θJC = 0.70 °C/W for IGBT).

Technical Context

This IGBT employs trench-gate field-stop technology to achieve low conduction loss and square reverse bias safe operating area (RBSOA). Its positive V_CE(on) temperature coefficient enables stable current sharing in parallel configurations without external ballasting resistors.

The co-packaged diode features ultrafast soft recovery (t_rr = 105 ns, I_rr = 40 A at 150 °C) and tight parameter distribution across production lots - critical for minimizing voltage overshoot and EMI in hard-switched bridge topologies.

Key Specifications

Pinout & Package

TO-247AC package with isolated mounting flange; 3-terminal configuration (Gate, Collector, Emitter) compatible with standard heatsink interfaces and mechanical torque specification of 10 lbf·in (1.1 N·m).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN50N120B3 and STGW40H120F2, IRG7PH35UDPBF offers the lowest combined conduction/recovery loss at 20 A/20 kHz due to its 1.9 V V_CE(on) and 105 ns soft t_rr, making it optimal for space-constrained solar and induction heating inverters where thermal management is critical.

Availability

IRG7PH35UDPBF is available at Aetrix Electronics and suitable for solar inverter design, UPS manufacturing, induction heating equipment, and industrial welding systems requiring stable component supply and long-term lifecycle continuity.

Supply support for IRG7PH35UDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global R&D and wafer fabrication facilities.

This device belongs to Infineon's PrimePACK™-compatible high-voltage IGBT portfolio, engineered specifically for renewable energy inverters and industrial motor drives demanding high reliability at 1200 V blocking voltage.

FAQ

What is the maximum allowable gate-emitter voltage for IRG7PH35UDPBF?

The absolute maximum continuous gate-emitter voltage is ±30 V. Operation beyond ±20 V risks permanent gate oxide damage, while gate drive circuits must limit transient overshoot to ≤±25 V using clamping diodes or active gate control. Gate threshold voltage (V_GE(th)) ranges from 3.0 to 6.0 V at 600 µA collector current.

Does IRG7PH35UDPBF require a negative gate voltage for reliable turn-off?

No negative gate voltage is required; the device turns off fully with 0 V gate drive. However, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-di/dt environments. Gate drive must source/sink ≥2 A peak current to charge/discharge 85–130 nC within nanosecond-scale switching times.

How does the integrated diode differ from standard fast recovery diodes?

Its ultrafast soft recovery diode exhibits 105 ns reverse recovery time and 790 µJ recovery energy at 150 °C - significantly lower than standard FRDs (typically 250–500 ns, >2000 µJ). The "softness factor" (t_a/t_b) exceeds 1.8, suppressing voltage spikes and EMI during commutation in hard-switched bridges.

Can IRG7PH35UDPBF be paralleled without external current-sharing components?

Yes - its positive V_CE(on) temperature coefficient causes current to naturally redistribute toward cooler devices during thermal transients. Parallel operation has been validated with ≤5% current imbalance at 20 A per device under matched gate drive and heatsinking, eliminating need for emitter resistors or active balancing circuits.