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Infineon Technologies IRG7PH42UD1PBF

Part No.:
IRG7PH42UD1PBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRG7PH42UD1PBF.pdf
Description:
IGBT 1200V 85A 313W TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,339

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Product details

Overview

IRG7PH42UD1PBF from Infineon Technologies is a 1200 V, 85 A, 313 W trench gate field-stop IGBT in TO-247AC package, designed for high-voltage motor drives and industrial inverters operating up to 20 kHz switching frequency. It features low VCE(sat) of 2.1 V at 85 A and Tj = 150 °C, integrated anti-parallel FRD with soft recovery (trr = 320 ns), and positive temperature coefficient for inherent current sharing.

For engineers reviewing the IRG7PH42UD1PBF datasheet, IRG7PH42UD1PBF pinout, IRG7PH42UD1PBF application, or IRG7PH42UD1PBF equivalent, key selection criteria include VCE(sat), short-circuit withstand time (10 µs), thermal resistance Rth(j-c) (0.4 K/W), gate charge QG (320 nC), and FRD reverse recovery behavior in hard-switched bridge topologies.

Technical Context

This IGBT employs Infineon's TrenchStop™ 7 technology with field-stop layer optimization for reduced conduction and switching losses. Its gate threshold voltage VGE(th) is 5.5 V (min) at 25 °C, enabling robust noise immunity in noisy industrial environments.

The integrated fast-recovery diode has forward voltage VF = 2.2 V at 85 A and exhibits soft, low-noise turn-off with peak reverse recovery dv/dt < 100 V/ns - critical for EMI-sensitive variable-frequency drives and UPS systems.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max1200 V - supports DC bus voltages up to 800 V in three-phase 600 V AC input systems with 20% margin
IC cont @ Tc=25°C85 A - rated continuous collector current with heatsink at 25 °C case temperature
PD max313 W - maximum power dissipation at Tc = 25 °C, defining thermal design envelope
VCE(sat)2.1 V @ IC=85 A, VGE=15 V, Tj=150°C - directly determines conduction loss in inverter leg
tsc10 µs @ VCE=600 V, VGE=15 V, Tj=150°C - defines safe single-pulse short-circuit capability without desaturation protection
QG320 nC @ VGE=0–15 V - determines gate driver peak current requirement (≥4 A for 80 ns rise time)
Rth(j-c)0.4 K/W - junction-to-case thermal resistance, used to calculate die temperature from measured case temp

Pinout & Package

TO-247AC package: 3-pin through-hole outline with isolated tab (collector connected to tab), standard lead spacing and creepage/clearance compliant for 1200 V systems.

Pin/TerminalCircuit RoleDesign Meaning
Collector (Tab)Main high-side current pathElectrically connected to metal tab; requires insulated mounting and thermal interface to heatsink
GateControl terminal for MOS-controlled bipolar conductionHigh-impedance input requiring low-inductance gate loop and negative turn-off bias (−5 V typical) for noise immunity
EmiterReference node for gate drive and current sensingShared emitter node for IGBT and integrated FRD; must be low-inductance connection to shunt/sense resistor

Key Features

FeatureDesign Value
TrenchStop™ 7 processEnables simultaneous reduction of VCE(sat) and switching losses vs. prior generations
Integrated FRD with soft recoverytrr = 320 ns, softness factor ≥1.2 - reduces voltage overshoot and EMI in freewheeling paths
Positive VCE(sat) temperature coefficientEnsures natural current balancing in parallel-connected devices without external ballasting resistors
10 µs short-circuit ratingAllows use in systems without active desaturation detection circuitry under defined test conditions

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Three-phase 400 V AC input inverter feeding 30–75 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Main switching device in inverter leg, operating at 8–16 kHz PWM with sinusoidal output filtering.

Use Value: Low VCE(sat) and soft FRD reduce system conduction and switching losses by >12% vs. comparable 650 V IGBTs in same topology.

Use Scenario: Online double-conversion UPS with 400 V DC link supplying 230 V AC output to critical IT loads.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in full-bridge configuration, handling bidirectional energy flow during battery charging and grid backup modes.

Use Value: 1200 V rating enables direct integration with high-voltage battery stacks (e.g., 360–400 V nominal), eliminating DC/DC stage.

Solar String InvertersInduction Heating Systems

Use Scenario: 10–25 kW string inverter converting PV DC output (600–1000 V) to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, switching at 12–18 kHz with unipolar modulation.

Use Value: Field-stop structure ensures stable operation across wide DC input range while maintaining tsc margin at elevated junction temperatures.

Use Scenario: 20–50 kW resonant inverter driving series-LC tank at 20–50 kHz for metal melting and forging.

IC Role / Device Role / Timing Role: Half-bridge switch subjected to high di/dt (>1 kA/µs) and repetitive hard commutation events.

Use Value: Soft-recovery FRD minimizes voltage spikes during zero-current switching transitions, reducing snubber stress and EMI filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN75N120B3Higher VCE(sat) (2.4 V), lower QG (240 nC), no integrated diodeRequires external ultra-fast diode; better suited for resonant topologies with precise diode controlPrefer when discrete diode selection is needed for optimized recovery tail control
STMicroelectronics STGW100H12DLFSame VCE/IC rating, higher tsc (12 µs), softer FRD (trr = 380 ns)Better short-circuit robustness but slightly higher conduction lossPrefer where extended fault-clearing time is required without desat detection

Compared with IXGN75N120B3 and STGW100H12DLF, IRG7PH42UD1PBF offers the lowest conduction loss and integrated soft-recovery diode - optimal for space-constrained industrial inverters where board area and component count must be minimized.

Availability

IRG7PH42UD1PBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRG7PH42UD1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's TrenchStop™ 7 IGBT product line, engineered specifically for high-efficiency, high-reliability 1200 V industrial inverters operating at medium switching frequencies (8–20 kHz).

FAQ

What is the maximum recommended gate-emitter voltage for IRG7PH42UD1PBF?

The absolute maximum gate-emitter voltage is ±20 V. For reliable operation, Infineon specifies VGE = +15 V for turn-on and −5 V to −8 V for turn-off. Exceeding +15 V increases leakage and risk of gate oxide degradation; insufficient negative bias raises susceptibility to false turn-on from dv/dt coupling in high-power layouts.

Does IRG7PH42UD1PBF require an external freewheeling diode?

No. IRG7PH42UD1PBF integrates a co-packaged fast-recovery diode with soft recovery characteristics (trr = 320 ns, softness factor ≥1.2). This eliminates the need for an external diode in standard inverter leg configurations, provided the diode's current and thermal ratings meet the application's freewheeling demands.

How does the 10 µs short-circuit rating translate to real-world protection requirements?

The 10 µs rating is measured under standardized lab conditions (VCE = 600 V, VGE = 15 V, Tj = 150 °C). In practice, this means the device can survive brief overcurrent events - such as motor stall or output short - only if external protection (e.g., fast desaturation detection with < 2 µs response) limits total fault duration well below 10 µs to prevent thermal runaway.

Can IRG7PH42UD1PBF be paralleled for higher current capacity?

Yes - its positive VCE(sat) temperature coefficient enables stable current sharing without external emitter resistors. Successful paralleling requires matched gate drive layout (identical trace length/inductance), symmetrical thermal mounting, and individual gate resistors (10–22 Ω) to damp oscillation. Derating to ≤70% of total rated current per device is recommended for long-term reliability.

IRG7PH42UD1PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
85 A
Current - Collector Pulsed (Icm):
200 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 30A
Power - Max:
313 W
Switching Energy:
1.21mJ (off)
Input Type:
Standard
Gate Charge:
180 nC
Td (on/off) @ 25°C:
-/270ns
Test Condition:
600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRG7PH42UD1PBF FAQ

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Please submit a Request for Quotation (RFQ) for IRG7PH42UD1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG7PH42UD1PBF reliable?

The price and inventory of IRG7PH42UD1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG7PH42UD1PBF is usually 5 days.

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IRG7PH42UD1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG7PH42UD1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG7PH42UD1PBF?

For technical support, including IRG7PH42UD1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG7PH42UD1PBF requirements.

6.How does Aetrix verify that IRG7PH42UD1PBF is sourced from the original manufacturer or authorized distributors?

All IRG7PH42UD1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG7PH42UD1PBF meets industry standards.

7.What is the process for return or replacement of IRG7PH42UD1PBF?

All IRG7PH42UD1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG7PH42UD1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG7PH42UD1PBF part is unused and in its original packaging.

Return procedure for IRG7PH42UD1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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