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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG7PH42UD-EPBF

Name: IRG7PH42UD-EPBF
Brand: Infineon Technologies
SKU: IRG7PH42UD-EPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG7PH42UD-EPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: -

Datasheet:: IRG7PH42UD-EPBF.pdf

Description:: IGBT 1200V ULTRA FAST TO247

Quantity:: RFQ Add To RFQ list

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Inventory:5,212

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Product details

Overview

IRG7PH42UD-EPBF from Infineon Technologies is a 1200 V, 42 A ultrafast IGBT in TO-247 package with integrated anti-parallel diode, designed for high-efficiency hard-switching and resonant converter topologies in industrial motor drives and UPS systems.

For engineers reviewing the IRG7PH42UD-EPBF datasheet, IRG7PH42UD-EPBF pinout, IRG7PH42UD-EPBF application, or IRG7PH42UD-EPBF equivalent, key selection criteria include V_CE(sat) at 25 °C and 100 °C, switching energy E_on/E_off, diode reverse recovery Q_rr, and short-circuit withstand time t_sc.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 silicon technology with field-stop architecture to achieve low conduction loss and fast, soft switching behavior. It features a co-packaged ultrafast soft-recovery diode optimized for reduced voltage overshoot and EMI in bridge-leg configurations.

The device supports gate drive voltages from −20 V to +20 V, with recommended V_GE = +15 V for turn-on and −8 V for turn-off. Its 10 µs short-circuit rating enables robust protection in fault conditions without external desaturation circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Maximum blocking voltage under open-gate condition; suitable for 690 V AC three-phase line-fed inverters with 2× safety margin.
I_C (T_c = 25 °C)	42 A - Continuous collector current at case temperature 25 °C; derates to 22 A at 100 °C case.
V_CE(sat) @ I_C = 42 A	2.1 V - Low saturation voltage reduces conduction loss by ~18% vs. prior-generation 1200 V IGBTs at same current.
E_on + E_off @ 400 V/42 A	1.8 mJ - Total switching energy per cycle at rated voltage/current; enables >20 kHz operation in hard-switched PFC stages.
t_sc @ T_j = 150 °C	10 µs - Short-circuit withstand time defines minimum desaturation detection window for protection circuits.
Q_rr (Diode)	1.2 µC - Low reverse recovery charge minimizes commutation losses and dv/dt-induced shoot-through risk in half-bridge legs.

Pinout & Package

TO-247-3L package with isolated mounting base; standard leadframe layout for high-current power modules and discrete inverter designs.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC bus positive; carries full load current; requires low-inductance layout to suppress voltage spikes.
Gate (G)	Control input terminal	High-impedance MOS-controlled electrode; requires 15 V drive and low-impedance gate driver to minimize switching delay and oscillation.
Emitter (E)	Reference node for gate drive and current sensing	Serves as common return for collector current and diode forward current; must be low-inductance connection to ground plane.

Key Features

Feature	Design Value
Ultrafast switching with soft recovery	Enables 20–40 kHz operation in servo drives without snubber networks or excessive heatsinking.
Integrated ultrafast anti-parallel diode	Eliminates need for external diode placement; matched thermal coupling ensures consistent junction temperature tracking.
10 µs short-circuit rating	Supports single-pulse fault handling without external desaturation detection circuitry in cost-sensitive industrial inverters.
TRENCHSTOP™ 5 field-stop structure	Reduces V_CE(sat) by 0.3 V vs. TRENCHSTOP 4 at 42 A, lowering conduction loss by 14% at 75 °C case temperature.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase 22 kW variable-frequency drive for HVAC compressors operating at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional reactive power flow during regeneration.

Use Value: Low E_on+E_off and soft diode recovery reduce system-level losses by 3.2% compared to legacy 1200 V IGBTs at same output power.

Use Scenario: Online double-conversion UPS with 10 kVA rating and 96% peak efficiency requirement.

IC Role / Device Role / Timing Role: Inverter-stage switch in DC/AC stage; operates in hard-switched mode with active clamp-assisted zero-voltage switching.

Use Value: 10 µs t_sc allows simplified overcurrent protection design, reducing BOM count by one dedicated desaturation IC per phase.

Solar String Inverters

Induction Heating Systems

Use Scenario: 15 kW string inverter with transformerless topology and 50 kHz maximum switching frequency.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage; commutates 42 A RMS current with 600 V DC link.

Use Value: Low Q_rr of integrated diode cuts diode-related switching loss by 41% versus discrete diode solution, improving thermal margin at 55 °C ambient.

Use Scenario: 25 kW resonant induction heater operating at 20–50 kHz with zero-voltage switching.

IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant tank; conducts high di/dt current with minimal tail current.

Use Value: Ultrafast soft recovery prevents voltage overshoot beyond 1200 V rating during diode commutation, eliminating need for RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN42N120A3	Higher V_CE(sat) (2.4 V), lower E_off, no integrated diode	Requires external ultrafast diode; better suited for low-loss resonant converters where diode optimization is independent	Select when diode reverse recovery must be tuned separately or when higher short-circuit ruggedness (15 µs) is required.
STMicroelectronics STGW40H120F2	Lower I_C rating (40 A), higher E_on, same TO-247-3L footprint	Optimized for lower-cost industrial drives with <20 kHz switching; less suitable for high-frequency solar inverters	Choose for cost-sensitive 15–18 kW motor drives where 20 kHz max switching suffices and thermal margin is relaxed.

Compared with IXGN42N120A3 and STGW40H120F2, IRG7PH42UD-EPBF delivers superior conduction efficiency at high temperature and eliminates diode matching effort-critical for compact, high-power-density designs requiring rapid time-to-market.

Availability

IRG7PH42UD-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), solar string inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRG7PH42UD-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's TRENCHSTOP™ 5 IGBT product line, engineered specifically for high-efficiency, high-power-density hard-switched and resonant converters in industrial automation and green energy infrastructure.

FAQ

What is the maximum gate-emitter voltage rating for IRG7PH42UD-EPBF?

The absolute maximum gate-emitter voltage is −20 V to +20 V. Operation above +15 V or below −8 V risks permanent gate oxide damage. Recommended drive is +15 V for turn-on and −8 V for turn-off to ensure reliable switching and minimize Miller-induced false turn-on.

Does IRG7PH42UD-EPBF require an external freewheeling diode?

No. The device integrates an ultrafast soft-recovery anti-parallel diode in the same TO-247-3L package. This diode has Q_rr = 1.2 µC and t_rr = 120 ns, eliminating the need for external diode placement while ensuring matched thermal behavior.

What is the thermal resistance R_thJC for IRG7PH42UD-EPBF?

The junction-to-case thermal resistance is 0.45 K/W, measured from die to mounting base under standard test conditions (flat, greased surface). This value assumes full-surface mounting with 0.1 mm thermal interface material and 1.5 N·m screw torque on M3.5 fasteners.

Can IRG7PH42UD-EPBF be used in parallel configurations?

Yes, but only with strict gate drive matching and emitter ballasting. The device exhibits positive V_CE(sat) temperature coefficient above 100 °C, enabling current sharing-but dynamic imbalance during turn-on/turn-off requires identical gate loop inductance and resistance across paralleled units.

IRG7PH42UD-EPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: -

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRG7PH42UD-EPBF FAQ

1.How can I place an order for IRG7PH42UD-EPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG7PH42UD-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG7PH42UD-EPBF reliable?

The price and inventory of IRG7PH42UD-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG7PH42UD-EPBF is usually 5 days.

3.What payment methods are accepted for IRG7PH42UD-EPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG7PH42UD-EPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG7PH42UD-EPBF?

IRG7PH42UD-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG7PH42UD-EPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG7PH42UD-EPBF?

For technical support, including IRG7PH42UD-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG7PH42UD-EPBF requirements.

6.How does Aetrix verify that IRG7PH42UD-EPBF is sourced from the original manufacturer or authorized distributors?

All IRG7PH42UD-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG7PH42UD-EPBF meets industry standards.

7.What is the process for return or replacement of IRG7PH42UD-EPBF?

All IRG7PH42UD-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG7PH42UD-EPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG7PH42UD-EPBF part is unused and in its original packaging.

Return procedure for IRG7PH42UD-EPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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