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Infineon Technologies IRG7PH42UPBF

Part No.:
IRG7PH42UPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRG7PH42UPBF.pdf
Description:
IGBT 1200V 90A 385W TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,998

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Product details

Overview

IRG7PH42UPBF from Infineon Technologies is a 1200 V, 60 A (TC = 100°C) trench-gate field-stop IGBT in TO-247AC package, designed for high-voltage switching in industrial inverters and UPS systems. It features 1.7 V typical VCE(on) at 30 A/15 V/25°C, 175°C maximum junction temperature, and full square RBSOA with clamped inductive load rating up to 120 A.

For engineers reviewing the IRG7PH42UPBF datasheet, IRG7PH42UPBF pinout, IRG7PH42UPBF application, or IRG7PH42UPBF equivalent, key selection criteria include VCE(on) temperature coefficient, gate charge (157–236 nC), switching energy (Eon/Eoff = 2105/1182 μJ @ 25°C), RθJC = 0.39°C/W, and RBSOA compliance at 175°C.

Technical Context

This IGBT employs field-stop trench technology to achieve low conduction loss and balanced switching performance across 1–50 kHz operating frequencies. Its positive VCE(on) temperature coefficient enables stable parallel operation, while tight parameter distribution supports consistent current sharing in multi-device modules.

The device integrates full square reverse bias safe operating area (RBSOA) validated at VCC = 960 V, Vp = 1200 V, and TJ = 175°C, with 100% ILM testing and lead-free construction compliant with RoHS Directive 2011/65/EU.

Key Specifications

ParameterValue and Actual Design Meaning
VCES1200 V - Withstands DC bus voltages up to 960 V (80% rating) in solar and UPS inverters
IC @ TC = 100°C60 A - Continuous silicon-limited current for thermal design at industrial heatsink temperatures
VCE(on) typ.1.7 V @ 30 A/15 V/25°C - Enables <1.5% conduction loss in 600 V-class inverters at rated load
Eoff typ.1182 μJ @ 30 A/600 V/10 Ω/25°C - Determines snubber sizing and thermal budget in hard-switched topologies
RθJC0.39 °C/W - Defines minimum heatsink interface requirement for 192 W dissipation at TC = 100°C
Qg157–236 nC - Sets gate driver peak current (≥3 A) and PCB layout constraints for low-inductance drive paths
TJ(max)175 °C - Supports operation in sealed enclosures with limited airflow and high ambient temperatures

Pinout & Package

Package: TO-247AC - Industry-standard 3-lead through-hole power package with isolated metal tab, optimized for mechanical mounting and thermal transfer to heatsinks using 6-32 or M3 screws (torque: 1.1 N·m).

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputReceives 15 V turn-on / –5 V turn-off voltage; requires ≤10 Ω series resistance to limit dV/dt-induced oscillation
C (Collector)High-side power outputConnected to DC bus positive; carries full load current and withstands 1200 V blocking
E (Emitter)Power return and referenceServes as common source for gate drive return path; must be low-inductance to avoid Miller-induced false turn-on

Key Features

FeatureDesign Value
Low VCE(on) trench IGBT technology1.7 V typical saturation voltage reduces conduction loss by ≥25% vs. planar IGBTs at 30 A
Square RBSOAValidated at 175°C with 120 A clamped inductive load - eliminates derating for short-circuit robustness
Positive VCE(on) temp. coefficient+1.2 mV/°C drift ensures inherent current balancing during parallel operation without external ballasting
100% ILM testedEvery unit verified for 120 A clamped inductive capability - guarantees short-circuit ruggedness in welding and UPS
Lead-free (PbF)RoHS-compliant finish with soldering tolerance up to 300°C (10 s) - compatible with lead-free reflow and wave processes

Applications

UPS SystemsSolar Inverters

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz AC output under grid failure with ≤10 ms switchover.

IC Role / Device Role / Timing Role: High-side IGBT in three-phase inverter bridge switching 600–800 V DC bus at 8–16 kHz.

Use Value: 175°C TJ(max) and square RBSOA enable reliable 10-year field life at 40°C ambient with 100% load cycling.

Use Scenario: Central string inverter converting 600–1000 V PV array DC to grid-synchronized 230/400 V AC.

IC Role / Device Role / Timing Role: Main switching device in NPC or T-type topology handling 30–60 A RMS output current.

Use Value: Low 1.7 V VCE(on) and 1182 μJ Eoff support >98.5% peak efficiency at 50% load and 25°C.

Induction HeatingIndustrial Welding

Use Scenario: Solid-state resonant inverter driving 20–100 kHz induction coils for metal heating in forging and brazing.

IC Role / Device Role / Timing Role: Half-bridge switch operating in zero-voltage switching (ZVS) mode with 20–50 kHz fundamental frequency.

Use Value: Tight parameter distribution and low Qgc/Qge ratio ensure matched timing across paralleled devices and stable ZVS margin.

Use Scenario: IGBT-based inverter welder delivering 100–500 A DC output with pulsed arc control for MIG/TIG processes.

IC Role / Device Role / Timing Role: Primary DC link switch modulating 300–600 V bus at 10–30 kHz to regulate output current waveform.

Use Value: Full square RBSOA and 120 A ILM rating withstand repetitive short-circuit events during arc ignition and spatter.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN75N120B31200 V/75 A, higher Qg (260 nC), RθJC = 0.33°C/W, no 100% ILM testBetter thermal resistance but higher gate drive loss; less rugged under repeated short-circuit stressSelect when lower RθJC is critical and short-circuit immunity is managed at system level
STMicroelectronics STGW60H120DF21200 V/60 A, VCE(on) = 1.85 V typ., Eoff = 1450 μJ @ 25°C, TO-247 long leadsHigher conduction and switching losses; same RBSOA rating but different thermal interface geometrySelect when legacy board layout uses longer-lead TO-247 variants and minor efficiency trade-off is acceptable

Compared with IXGN75N120B3 and STGW60H120DF2, IRG7PH42UPBF offers superior short-circuit ruggedness via 100% ILM screening and tighter VCE(on) distribution-critical for unattended UPS and solar systems where field reliability outweighs marginal thermal or cost advantages.

Availability

IRG7PH42UPBF is available at Aetrix Electronics and suitable for UPS systems, solar inverters, induction heating equipment, and industrial welding machines requiring stable component supply across multi-year production cycles.

Supply support for IRG7PH42UPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's PrimePACK™-compatible high-voltage IGBT portfolio, engineered for high-efficiency, high-reliability switching in 600–1200 V industrial power conversion systems.

FAQ

What is the maximum gate-emitter voltage rating for IRG7PH42UPBF?

The absolute maximum continuous gate-to-emitter voltage is ±30 V. Operation above ±20 V risks permanent gate oxide damage; recommended turn-on voltage is +15 V and turn-off voltage is –5 V to –8 V for noise immunity and safe commutation. Exceeding ±30 V even momentarily may cause irreversible gate failure.

Does IRG7PH42UPBF include an integrated anti-parallel diode?

No, IRG7PH42UPBF is a discrete IGBT die in TO-247AC package with no integrated freewheeling diode. External ultrafast soft-recovery diodes (e.g., IDH08SG60C) must be used in inverter legs. The device's datasheet specifies separate diode clamp test conditions but does not integrate a diode.

How is the 120 A ILM rating validated?

Each IRG7PH42UPBF unit undergoes 100% production testing at VGE = 20 V, L = 22 μH, pulse width ≤ 400 μs, and duty cycle ≤ 2%, per AN-1086 guidelines. This verifies clamped inductive load capability without degradation-ensuring robustness against motor stall or arc faults in welding and UPS applications.

Can IRG7PH42UPBF be paralleled for higher current capacity?

Yes-its positive VCE(on) temperature coefficient (+1.2 mV/°C) and tight parameter distribution enable stable current sharing. Successful parallel operation requires matched gate drive impedance (<±5% variation), symmetrical PCB layout, and shared heatsink with uniform thermal interface. No external emitter resistors are needed under these conditions.

IRG7PH42UPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
90 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 30A
Power - Max:
385 W
Switching Energy:
2.11mJ (on), 1.18mJ (off)
Input Type:
Standard
Gate Charge:
157 nC
Td (on/off) @ 25°C:
25ns/229ns
Test Condition:
600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRG7PH42UPBF FAQ

1.How can I place an order for IRG7PH42UPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG7PH42UPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG7PH42UPBF reliable?

The price and inventory of IRG7PH42UPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG7PH42UPBF is usually 5 days.

3.What payment methods are accepted for IRG7PH42UPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG7PH42UPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG7PH42UPBF?

IRG7PH42UPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG7PH42UPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG7PH42UPBF?

For technical support, including IRG7PH42UPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG7PH42UPBF requirements.

6.How does Aetrix verify that IRG7PH42UPBF is sourced from the original manufacturer or authorized distributors?

All IRG7PH42UPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG7PH42UPBF meets industry standards.

7.What is the process for return or replacement of IRG7PH42UPBF?

All IRG7PH42UPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG7PH42UPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG7PH42UPBF part is unused and in its original packaging.

Return procedure for IRG7PH42UPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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