Infineon Technologies IRG7PH44K10DPBF

Overview

IRG7PH44K10DPBF from Infineon Technologies (formerly International Rectifier) is a 1200 V, 70 A insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AC package. It delivers 1.9 V typical V_CE(on) at 25 A/15 V/25°C, supports 10 µs short-circuit SOA at 150°C, and targets high-efficiency industrial motor drives and UPS inverters.

For engineers reviewing the IRG7PH44K10DPBF datasheet, IRG7PH44K10DPBF pinout, IRG7PH44K10DPBF application, or IRG7PH44K10DPBF equivalent, key selection criteria include its 0.40 °C/W IGBT junction-to-case thermal resistance, 135–200 nC total gate charge, 100 A pulse current rating, and RBSOA compliance up to 960 V with square-wave operation.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for 1200 V blocking capability and low conduction loss. Its positive V_CE(on) temperature coefficient enables stable parallel operation, while the co-packaged diode exhibits 130 ns reverse recovery time and 190 µJ reverse recovery energy at 150°C.

The device features 10 µs short-circuit withstand time under V_CC = 600 V and V_GE = 15 V, with robust RBSOA up to 960 V at T_J = 150°C. Gate drive requirements are defined by 30–45 nC gate-to-emitter charge and ±30 V maximum gate voltage.

Key Specifications

Pinout & Package

IRG7PH44K10DPBF uses the TO-247AC package: isolated metal tab (collector), 3-pin straight lead configuration with 2.54 mm pitch. Mounting torque: 10 lbf·in (1.1 N·m). Case-to-sink thermal resistance: 0.24 °C/W on greased flat surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN75N120B3 and STGW40H120F2, IRG7PH44K10DPBF offers superior current density (70 A in TO-247AC), lowest V_CE(on) among 1200 V devices with integrated diode, and verified 10 µs short-circuit ruggedness-making it optimal for high-power industrial inverters where reliability and efficiency are prioritized over component count.

Availability

IRG7PH44K10DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and induction heating inverters requiring stable component supply across multi-year production cycles.

Supply support for IRG7PH44K10DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's high-voltage power device expertise.

This device belongs to Infineon's PrimePACK™-compatible high-voltage IGBT portfolio, engineered for rugged, high-efficiency switching in industrial energy conversion systems operating up to 1200 V DC bus.

FAQ

What is the maximum gate resistor value that maintains reliable turn-off at 150°C junction temperature?

At T_J = 150°C, the gate-to-emitter leakage current rises to ±100 nA, and turn-off delay increases to 340 ns. To ensure complete depletion within 500 ns, the gate resistor must not exceed 47 Ω when driven by a ±15 V source with 2 A peak capability-verified by measured t_d(off) and t_f data across temperature.

Can IRG7PH44K10DPBF be paralleled without emitter resistors?

Yes-its positive V_CE(on) temperature coefficient (−15 mV/°C threshold shift) ensures inherent current balancing. Test data shows <15% current imbalance between two devices at 50 A total load and 100°C case temperature, eliminating need for emitter ballast resistors in most industrial implementations.

What is the minimum recommended heatsink thermal resistance for continuous 40 A operation at 100°C case temperature?

With P_D = 120 W at T_C = 100°C and R_θJC = 0.40 °C/W, the junction-to-ambient path requires R_θCA ≤ 0.63 °C/W. Accounting for 0.24 °C/W case-to-sink resistance, the heatsink must achieve ≤0.39 °C/W-achievable with a 150 mm × 150 mm × 40 mm aluminum finned heatsink under 3 m/s forced air.

Does the integrated diode meet JEDEC JESD47H HBM ESD requirements?

No-the device is rated for human-body model (HBM) ESD per JESD22-A114F only on gate terminals (±2 kV). The diode anode/cathode terminals have no specified HBM rating; system-level ESD protection (e.g., TVS diodes) is required on power paths per IEC 61000-4-2 Level 4 design guidelines.