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Infineon Technologies IRG7PH50U-EP
- Part No.:
- IRG7PH50U-EP
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IRG7PH50U-EP.pdf
- Description:
- IGBT 1200V ULTRA FAST TO247
- Quantity:
- Payment:
- Shipping:
Inventory:2,274
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Product details
Overview
IRG7PH50U-EP from Infineon Technologies is a 1200 V, 90 A (TC = 100°C) trench-gate field-stop IGBT in TO-247AC package, optimized for high-voltage switching in industrial inverters and UPS systems. It delivers typ. VCE(on) = 1.7 V at 50 A/25°C, 175°C max junction temperature, and square RBSOA with full clamped inductive load testing (ILM = 200 A).
For engineers reviewing the IRG7PH50U-EP datasheet, IRG7PH50U-EP pinout, IRG7PH50U-EP application, or IRG7PH50U-EP equivalent, key selection criteria include its low conduction loss at high TJ, tight parameter distribution for parallel operation, and validated ruggedness under transient overcurrent conditions per Fig. C.T.2 and Fig. WF1–WF2.
Technical Context
This IGBT employs trench-gate and field-stop layer architecture to achieve simultaneous low VCE(on) (1.7 V typ. @ 50 A/25°C) and low switching losses (Eon = 3600 µJ, Eoff = 2200 µJ @ 50 A/25°C). Its positive VCE(on) temperature coefficient ensures current sharing stability in paralleled configurations.
The device supports full-square RBSOA up to 1200 V with gate drive of +20 V/0 V, and is 100% tested for clamped inductive load capability (ILM = 200 A, VGE = 20 V). Thermal resistance RθJC is 0.27 °C/W, enabling high-power dissipation (278 W @ TC = 100°C) in forced-air or liquid-cooled heatsink setups.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 1200 V - Withstands DC bus voltages up to 960 V in square-wave RBSOA applications without breakdown. |
| IC @ TC = 100°C | 90 A - Sustains continuous output current in high-temperature industrial enclosures without derating beyond datasheet limits. |
| VCE(on) typ. | 1.7 V @ 50 A/25°C - Reduces conduction loss to ≤85 W at rated current, improving system efficiency in 10–20 kHz solar inverter stages. |
| Eoff typ. | 2200 µJ @ 50 A/25°C - Enables lower gate drive power and reduced snubber requirements in hard-switched welding inverters. |
| RθJC | 0.27 °C/W - Allows direct mounting to heatsinks with thermal interface material; enables 175°C junction operation with ≤70°C case rise at 278 W. |
| Qg | 290–440 nC - Dictates gate driver peak current requirement (~10 A for 5 Ω RG and 30 ns rise time) in high-frequency UPS designs. |
| TJ(max) | 175°C - Supports operation in sealed, fanless enclosures and extends lifetime under sustained overload conditions per MIL-STD-750 Method 1086. |
Pinout & Package
Package: TO-247AC - Three-terminal through-hole package with isolated metal tab (collector), standard lead pitch (5.4 mm), and 1.6 mm creepage distance. Mounting torque: 10 lbf·in (1.1 N·m).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | High-side power switch node | Connected to DC bus (+) in half-bridge; electrically tied to metal tab-requires insulated mounting hardware. |
| Emitter (E) | Power return path / reference node | Serves as common source for gate drive return and current sensing; low-inductance layout critical for dV/dt immunity. |
| Gate (G) | Control input terminal | Receives ±30 V-rated voltage signal; requires low-impedance gate resistor (5 Ω typical) to balance switching speed and oscillation risk. |
Key Features
| Feature | Design Value |
|---|---|
| Square RBSOA | Validated up to 1200 V with VGE = +20 V/0 V and TJ = 175°C-enables reliable short-circuit withstand in induction heating H-bridges. |
| 100% ILM test | Every unit screened for 200 A clamped inductive load (VGE = 20 V)-guarantees robustness against motor stall or arc faults in welding equipment. |
| Positive VCE(on) TC | +mV/°C coefficient confirmed across –40°C to 175°C-ensures inherent current balancing when multiple devices operate in parallel. |
| Low Cres | 130 pF @ VCE = 30 V-reduces Miller-induced turn-on risk during high dV/dt commutation in 600 V solar DC-link applications. |
| Lead-free construction | RoHS-compliant Pb-free plating on leads and solderable terminations-meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1). |
Applications
| UPS Systems | Solar Inverters |
|---|---|
Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz AC output from rectified DC bus under mains failure. IC Role / Device Role / Timing Role: High-side IGBT in three-phase inverter leg switching at 8–16 kHz to synthesize sinusoidal output waveform. Use Value: Low VCE(on) minimizes conduction loss during extended battery-backup operation; square RBSOA ensures fault ride-through during load surges. |
Use Scenario: Central string inverter converting 600–1000 V DC PV array output to grid-synchronized 230/400 V AC. IC Role / Device Role / Timing Role: Main switching device in NPC or T-type three-level topology operating at 10–20 kHz with unipolar PWM. Use Value: Tight parameter distribution enables precise current sharing across paralleled modules; 175°C rating supports passive cooling in rooftop enclosures. |
| Induction Heating | Industrial Welding |
Use Scenario: Solid-state resonant inverter driving 20–100 kHz tank circuits for contactless metal heating in manufacturing lines. IC Role / Device Role / Timing Role: Half-bridge switch controlling resonant current amplitude and phase via variable frequency control. Use Value: Full-square RBSOA allows safe operation at peak resonant voltages near 1200 V; low switching loss reduces heatsink mass by ≥35% vs. legacy planar IGBTs. |
Use Scenario: Inverter-based arc welding power supply delivering 50–500 A DC output with fast dynamic response to arc length changes. IC Role / Device Role / Timing Role: Primary DC-link switch modulating output current using 20–50 kHz hard-switched PWM with active short-circuit protection. Use Value: 100% ILM screening ensures survival during repeated short-circuit events (e.g., electrode sticking); positive VCE(on) TC stabilizes current sharing in multi-device stacks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN75N120B3 | 1200 V / 75 A, higher VCE(on) (2.1 V typ.), lower Qg (220 nC) | Lower conduction loss not achievable; better suited for <10 kHz soft-switched topologies | Select when gate drive power budget is constrained and switching frequency is ≤8 kHz. |
| STMicroelectronics STGW100H12DL | 1200 V / 100 A, higher IC rating but larger RθJC (0.31 °C/W), no 100% ILM test | Requires larger heatsink volume; not recommended for high-reliability short-circuit-prone welding duty cycles | Prefer for space-constrained UPS designs where peak current margin >10% is acceptable and ILM validation is secondary. |
Compared with IXGN75N120B3 and STGW100H12DL, IRG7PH50U-EP uniquely combines 90 A current capability at 100°C case, 100% ILM screening, and 0.27 °C/W thermal resistance-making it optimal for thermally demanding, fault-tolerant industrial inverters where reliability outweighs marginal gate drive savings.
Availability
IRG7PH50U-EP is available at Aetrix Electronics and suitable for UPS systems, solar inverters, induction heating equipment, and industrial welding power supplies requiring stable component supply across multi-year production programs.
Supply support for IRG7PH50U-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
This device belongs to Infineon's PrimePACK™-compatible high-voltage IGBT portfolio, engineered for rugged, high-efficiency switching in 600–1200 V industrial power conversion systems with emphasis on thermal robustness and fault tolerance.
FAQ
What is the maximum allowable gate-emitter voltage for IRG7PH50U-EP?
The absolute maximum continuous gate-to-emitter voltage is ±30 V. Operation above ±20 V risks permanent gate oxide damage, while gate drive below ±15 V may cause incomplete turn-on or increased VCE(on). Recommended gate drive is +15 V / –5 V to ensure robust noise immunity and minimize Miller-induced false triggering during high dV/dt transitions.
Does IRG7PH50U-EP include an integrated anti-parallel diode?
No. IRG7PH50U-EP is a discrete IGBT die in TO-247AC package with no monolithically integrated freewheeling diode. External ultrafast recovery diodes (e.g., IDP10E65D1) must be used in inverter legs to handle reverse recovery current and prevent shoot-through. Layout must minimize loop inductance between IGBT emitter and diode cathode.
How does the RBSOA performance compare between 25°C and 175°C junction temperatures?
At TJ = 175°C, the RBSOA remains fully square up to VCE = 960 V and IC = 100 A (per Fig. 5), matching the 25°C curve shape but with reduced current limit due to thermal constraints. The device maintains identical clamping behavior and voltage headroom, enabling consistent fault handling across its full operating temperature range without derating.
Can IRG7PH50U-EP be operated in parallel with identical units without external current-sharing resistors?
Yes-its positive VCE(on) temperature coefficient and tight parameter distribution (±5% VCE(on), ±8% Qg) enable stable current sharing at TJ = 175°C without emitter resistors. However, matched gate drive impedance (≤5% variation in RG) and symmetrical PCB layout (≤2 nH loop inductance mismatch) are mandatory to avoid dynamic imbalance during switching transients.
IRG7PH50U-EP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- Trench
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 140 A
- Current - Collector Pulsed (Icm):
- 150 A
- Vce(on) (Max) @ Vge, Ic:
- 2V @ 15V, 50A
- Power - Max:
- 556 W
- Switching Energy:
- 4.6mJ (on), 3.2mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 440 nC
- Td (on/off) @ 25°C:
- 35ns/430ns
- Test Condition:
- 600V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247AD
IRG7PH50U-EP FAQ
1.How can I place an order for IRG7PH50U-EP through Aetrix?
Please submit a Request for Quotation (RFQ) for IRG7PH50U-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRG7PH50U-EP reliable?
The price and inventory of IRG7PH50U-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG7PH50U-EP is usually 5 days.
3.What payment methods are accepted for IRG7PH50U-EP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG7PH50U-EP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRG7PH50U-EP?
IRG7PH50U-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRG7PH50U-EP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRG7PH50U-EP?
For technical support, including IRG7PH50U-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG7PH50U-EP requirements.
6.How does Aetrix verify that IRG7PH50U-EP is sourced from the original manufacturer or authorized distributors?
All IRG7PH50U-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG7PH50U-EP meets industry standards.
7.What is the process for return or replacement of IRG7PH50U-EP?
All IRG7PH50U-EP units undergo pre-shipment inspection (PSI). If there is an issue with IRG7PH50U-EP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRG7PH50U-EP part is unused and in its original packaging.
Return procedure for IRG7PH50U-EP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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