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Infineon Technologies IRG7PH50UPBF

Part No.:
IRG7PH50UPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRG7PH50UPBF.pdf
Description:
IGBT 1200V 140A 556W TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,165

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Product details

Overview

IRG7PH50UPBF from Infineon (formerly International Rectifier) is a 1200 V, 90 A (TC = 100°C), trench-gate field-stop IGBT in TO-247AC package, optimized for high-voltage hard-switching applications including solar inverters and induction heating. It features 1.7 V typical VCE(on) at 50 A/25°C, 175°C maximum junction temperature, square RBSOA, and 100% ILM testing.

For engineers reviewing the IRG7PH50UPBF datasheet, IRG7PH50UPBF pinout, IRG7PH50UPBF application, or IRG7PH50UPBF equivalent, key selection criteria include its 1200 V VCES, low 290–440 nC total gate charge, 3600–4600 µJ Eon at 25°C, rugged 200 A clamped inductive current rating, and validated performance up to 175°C junction temperature.

Technical Context

This IGBT employs trench-gate and field-stop silicon architecture to achieve low conduction loss (VCE(on) = 1.7 V typ. @ 50 A/25°C) while maintaining robust switching behavior. Its positive VCE(on) temperature coefficient enables stable parallel operation, and full-square RBSOA supports reliable hard-switching under transient overloads.

Switching is characterized by 35–55 ns td(on), 40–60 ns tr, 430–500 ns td(off), and 45–65 ns tf at 25°C, with energy losses scaling predictably with gate resistance and collector current-Eon = 5600 µJ and Eoff = 3900 µJ at 175°C.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 1200 V - Withstands DC bus voltages up to 960 V in hard-switched solar inverters with 20% safety margin.
IC @ TC = 100°C 90 A - Sustains continuous output current in industrial UPS and welding systems with forced-air cooling.
VCE(on) typ. 1.7 V @ 50 A/25°C - Enables <1.5% conduction loss at rated current in 600 V DC-link inverters.
Eoff @ 175°C 3900 µJ - Determines snubber sizing and thermal design for high-temperature induction heating operation.
RθJC 0.27 °C/W - Defines minimum heatsink interface requirement for 278 W power dissipation at TC = 100°C.
Qg 290–440 nC - Sets gate driver peak current demand (>10 A) and influences switching speed vs. EMI trade-off.
ILM 200 A @ VGE = 20 V - Validates short-circuit withstand capability during fault conditions without desaturation protection.

Pinout & Package

Supplied in TO-247AC package with isolated metal tab (collector-connected). Case outline conforms to JEDEC TO-247AC mechanical standard; mounting screw torque: 10 lbf·in (1.1 N·m).

Pin/Terminal Circuit Role Design Meaning
Collector (C) High-side power terminal Connected to DC bus (+) in half-bridge; electrically tied to heatsink via isolated tab; requires creepage clearance ≥4 mm.
Emitter (E) Power return path Serves as reference node for gate drive and current sensing; low-inductance layout critical for dI/dt stability.
Gate (G) Control input High-impedance MOS-controlled terminal; requires ±30 V absolute max rating; sensitive to ESD and ringing above 20 V.

Key Features

Feature Design Value
Low VCE(on) trench IGBT technology 1.7 V typ. @ 50 A/25°C reduces conduction loss by ~25% versus planar 1200 V IGBTs in same package.
Square RBSOA Validated at VCC = 960 V, TJ = 175°C - enables single-pulse operation without dynamic derating in UPS hold-up stages.
100% ILM tested Every unit verified for 200 A clamped inductive current - eliminates screening failure risk in welder primary switches.
Positive VCE(on) tempco +1.0 mV/°C drift - ensures natural current sharing when paralleling multiple devices in solar string inverters.
Tight parameter distribution VGE(th) = 3.0–6.0 V, Qg = 290–440 nC - simplifies gate driver design across production lots without recalibration.

Applications

Solar Inverter DC-AC Stage Industrial UPS Inverter Module

Use Scenario: 3-phase, 100 kW string inverter operating at 1000 V DC bus with 16 kHz PWM switching.

IC Role / Device Role / Timing Role: High-side IGBT switch in NPC or T-type three-level topology; handles 50 A RMS fundamental current.

Use Value: 175°C-rated junction and square RBSOA allow sustained overload during cloud-edge transients without thermal shutdown.

Use Scenario: Online double-conversion UPS delivering clean 400 V AC output during grid outage with 10 ms transfer time.

IC Role / Device Role / Timing Role: Output stage IGBT in full-bridge inverter; switched at 4–8 kHz with sinusoidal PWM.

Use Value: Low 1.7 V VCE(on) minimizes conduction loss in battery-backed mode, extending runtime by ~3.2% at full load.

Induction Heating Inverter Resistance Welding Controller

Use Scenario: 50 kW resonant inverter driving 150 kHz tank circuit for metal forging with 20% duty cycle.

IC Role / Device Role / Timing Role: Half-bridge switch handling 120 A peak current pulses; operated in ZVS mode with soft turn-on.

Use Value: 200 A ILM rating supports 3× peak surge during coil detuning events without latch-up.

Use Scenario: Secondary-side DC weld controller delivering 20 kA pulses for spot welding automotive steel sheets.

IC Role / Device Role / Timing Role: Primary-side IGBT switch controlling transformer primary; gated with 50 µs pulses at 1–2 Hz.

Use Value: 0.27 °C/W RθJC enables direct-mount heatsinking to maintain TJ < 150°C during repetitive 100 ms on-times.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN75N120B3 1200 V / 75 A (TC = 100°C); higher VCE(on) = 2.2 V; lower Qg = 220 nC Better switching efficiency at >20 kHz but higher conduction loss above 40 A RMS Prefer for high-frequency resonant converters where Esw dominates; avoid in high-current UPS where VCE(on) loss dominates.
STMicroelectronics STGW100H12DL 1200 V / 100 A (TC = 100°C); VCE(on) = 1.85 V; includes integrated NTC thermistor Higher current rating enables derated use in 125 kW solar inverters; thermal monitoring simplifies protection logic Select when system-level thermal monitoring is required; accept 0.15 V higher VCE(on) for built-in diagnostics.

Compared with IXGN75N120B3 and STGW100H12DL, IRG7PH50UPBF offers the lowest VCE(on) among 1200 V 90 A-class IGBTs, making it optimal for conduction-loss-limited designs like medium-power UPS and welders, while trading off slightly higher Qg than ultra-fast alternatives.

Availability

IRG7PH50UPBF is available at Aetrix Electronics and suitable for solar inverters, industrial UPS systems, induction heating equipment, and resistance welding controllers requiring stable component supply across multi-year production cycles.

Supply support for IRG7PH50UPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The IRG7PH series belongs to Infineon's high-voltage IGBT portfolio designed specifically for 10–100 kW industrial power conversion systems demanding high reliability, wide temperature operation, and rugged short-circuit capability.

FAQ

What is the maximum allowable gate-emitter voltage for IRG7PH50UPBF?

The absolute maximum continuous VGE is ±30 V. Operation beyond ±20 V risks permanent gate oxide damage. Gate drive circuits must limit transient overshoot using clamping diodes or active regulation, especially during fast turn-off with high dV/dt across the collector-emitter path.

Does IRG7PH50UPBF require a negative gate voltage for reliable turn-off?

No. The device is fully specified for 0 V to +15 V gate drive. However, applying –5 V to –10 V during off-state improves noise immunity and reduces Miller-induced false turn-on in high-dI/dt environments such as welding inverters with shared ground paths.

Can IRG7PH50UPBF be paralleled without external emitter resistors?

Yes-its positive VCE(on) temperature coefficient enables inherent current balancing. However, matched gate drive loop inductance (<5 nH difference per leg) and symmetrical PCB layout are mandatory; emitter resistors (0.1 Ω) are still recommended for production robustness in UPS applications.

What is the thermal resistance from junction to case (RθJC) for IRG7PH50UPBF?

RθJC is 0.27 °C/W maximum, measured per JEDEC JESD51-14 standard on flat greased surface. This value assumes full contact between the isolated metal tab and heatsink; thermal interface material thickness ≤ 0.1 mm and bond line pressure ≥ 50 psi are required to achieve datasheet-rated performance.

IRG7PH50UPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
140 A
Current - Collector Pulsed (Icm):
150 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 50A
Power - Max:
556 W
Switching Energy:
3.6mJ (on), 2.2mJ (off)
Input Type:
Standard
Gate Charge:
290 nC
Td (on/off) @ 25°C:
35ns/430ns
Test Condition:
600V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRG7PH50UPBF FAQ

1.How can I place an order for IRG7PH50UPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG7PH50UPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG7PH50UPBF reliable?

The price and inventory of IRG7PH50UPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG7PH50UPBF is usually 5 days.

3.What payment methods are accepted for IRG7PH50UPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG7PH50UPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG7PH50UPBF?

IRG7PH50UPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG7PH50UPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG7PH50UPBF?

For technical support, including IRG7PH50UPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG7PH50UPBF requirements.

6.How does Aetrix verify that IRG7PH50UPBF is sourced from the original manufacturer or authorized distributors?

All IRG7PH50UPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG7PH50UPBF meets industry standards.

7.What is the process for return or replacement of IRG7PH50UPBF?

All IRG7PH50UPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG7PH50UPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG7PH50UPBF part is unused and in its original packaging.

Return procedure for IRG7PH50UPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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