Infineon Technologies IRG7S313UTRLPBF

Overview

IRG7S313UTRLPBF from Infineon Technologies (formerly International Rectifier) is a 330 V, 160 A peak, trench-gate field-stop IGBT optimized for sustain and energy recovery circuits in plasma display panel (PDP) drivers. It delivers 1.35 V typical V_CE(on) at 20 A/150°C and 570 μJ typical EPULSE at 240 V, with 150°C maximum junction temperature and D2PAK (TO-263) package.

For engineers reviewing the IRG7S313UTRLPBF datasheet, IRG7S313UTRLPBF pinout, IRG7S313UTRLPBF application, or IRG7S313UTRLPBF equivalent, key selection criteria include repetitive peak current capability (160 A @ 25°C), low-energy pulse rating for high-frequency PDP sustain switching, thermal resistance (R_θJC = 1.6°C/W), and lead-free D2PAK mechanical compatibility.

Technical Context

This IGBT employs field-stop trench gate architecture to minimize conduction loss and switching energy simultaneously-critical for PDP sustain circuits operating at ~200 kHz with 0.05 duty cycle and 2 μs pulse width. Its design prioritizes low V_CE(on) drift over temperature and robust short-circuit ruggedness under repetitive high-di/dt conditions.

The device integrates internal collector and emitter inductances (L_C = 4.5 nH, L_E = 7.5 nH) calibrated for accurate EPULSE measurement per JEDEC-standard half-sine test waveforms. Gate charge parameters (Q_g = 33 nC, Q_gc = 12 nC) are specified at V_CC = 240 V, enabling precise gate driver sizing for fast turn-on/turn-off transitions in high-repetition-rate PDP sustain stages.

Key Specifications

Pinout & Package

IRG7S313UTRLPBF is housed in a lead-free D2PAK (TO-263) surface-mount package with exposed drain pad for thermal enhancement. The package measures 15.42 × 10.90 × 4.72 mm and complies with EIA-418 standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IRG7PH42UD1PBF and STGP30NC60WD, IRG7S313UTRLPBF offers the lowest V_CE(on) and highest EPULSE rating in D2PAK format-making it optimal for high-efficiency, space-constrained PDP sustain modules where thermal density and pulse energy are limiting factors.

Availability

IRG7S313UTRLPBF is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, PDP energy recovery stages, and industrial high-frequency inverters requiring stable component supply, RoHS compliance, and proven thermal performance up to 150°C junction temperature.

Supply support for IRG7S313UTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage discrete devices and system-level power solutions.

This IGBT belongs to Infineon's "PDP-Optimized Trench IGBT" product line, engineered specifically for plasma display panel sustain and energy recovery circuits demanding ultra-low conduction loss, high repetitive peak current, and precise pulse energy control.

FAQ

What is the maximum allowable gate-emitter voltage for IRG7S313UTRLPBF?

The absolute maximum V_GE is ±30 V, but the device is characterized and qualified for continuous operation at 15 V gate drive. Exceeding +20 V risks accelerated gate oxide degradation, while negative V_GE below –10 V may cause unintended turn-on due to Miller coupling in high-di/dt PDP circuits.

Can IRG7S313UTRLPBF be used in hard-switched inverter topologies outside PDP applications?

Yes-it supports hard-switched operation up to 240 V DC bus with verified SOA up to 100 μs pulse width at 150°C. However, its EPULSE rating is optimized for 2 μs half-sine pulses; for longer pulses or higher bus voltages, derating per Fig. 12's forward bias SOA curve is required.

How does the internal emitter inductance affect gate drive design?

L_E = 7.5 nH contributes directly to V_CE overshoot during turn-off. To limit overshoot to <10% of V_CC, gate resistor R_G must be selected to balance switching speed and ringing-typically 5.1 Ω for 240 V, 12 A operation per datasheet test conditions.

Is IRG7S313UTRLPBF compliant with JEDEC moisture sensitivity level (MSL) standards?

Yes-the D2PAK package is rated MSL-3 per J-STD-020, with floor life of 168 hours at ≤30°C/60% RH. Bake condition is 125°C for 24 hours prior to reflow if exposed beyond floor life, consistent with lead-free assembly requirements.