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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG8P08N120KDPBF

Name: IRG8P08N120KDPBF
Brand: Infineon Technologies
SKU: IRG8P08N120KDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG8P08N120KDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRG8P08N120KDPBF.pdf

Description:: IGBT 1200V 15A 89W TO-247AC

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Product details

Overview

IRG8P08N120KDPBF from Infineon Technologies (formerly International Rectifier) is a 1200 V, 8 A insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AC package. It delivers 1.7 V typical V_CE(on) at 5 A/15 V_GE/25°C, supports 10 µs short-circuit SOA at 150°C, and targets high-efficiency industrial motor drives and solar inverters.

For engineers reviewing the IRG8P08N120KDPBF datasheet, IRG8P08N120KDPBF pinout, IRG8P08N120KDPBF application, or IRG8P08N120KDPBF equivalent, key selection criteria include its 1200 V blocking rating, 20 A clamped inductive load current (I_LM), 30–45 nC total gate charge, RBSOA-rated square safe operating area, and thermal resistance of 1.4°C/W (IGBT) junction-to-case.

Technical Context

This IGBT employs a field-stop trench-gate structure optimized for low conduction loss and robust switching behavior under hard-switched conditions. Its positive V_CE(on) temperature coefficient enables stable parallel operation, while the monolithically integrated diode features 50 ns reverse recovery time (t_rr) and 240 µJ reverse recovery energy (E_rec) at 150°C.

The device is characterized for 10 µs short-circuit withstand capability at V_CC = 600 V and T_J = 150°C, with gate drive voltage range of ±30 V and threshold voltage of 5.0–6.5 V. Its RBSOA extends to full square wave operation at 960 V and 20 A with V_GE = +20 V to 0 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Maximum blocking voltage before avalanche; enables use in 600–800 V DC bus systems with margin.
I_C @ T_C = 100°C	8 A - Continuous collector current derated for heatsink-limited thermal design at 100°C case temperature.
V_CE(on) typ.	1.7 V @ 5 A - Low saturation voltage reduces conduction loss in motor drive output stages.
Q_g	30–45 nC - Gate charge determines required driver peak current and influences switching loss trade-off.
R_θJC (IGBT)	1.4 °C/W - Junction-to-case thermal resistance defines minimum heatsink requirement for 36 W dissipation at 100°C case.
t_SC	≥10 µs - Short-circuit withstand time enables reliable protection using standard gate driver desaturation detection.
E_total @ 150°C	1.0 mJ @ 5 A - Total switching energy per cycle at elevated temperature informs thermal design of snubber and driver sizing.

Pinout & Package

IRG8P08N120KDPBF is housed in a TO-247AC package with isolated mounting tab (collector-connected), rated for 10 lbf·in (1.1 N·m) screw torque and 300°C soldering tolerance at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to high-side DC bus or inverter leg output; electrically tied to metal tab for thermal path and electrical reference.
Gate (G)	Control input	Isolated MOS-controlled terminal requiring ±30 V absolute max; 5.0–6.5 V threshold enables standard 15 V gate drivers.
Emitter (E)	Power return and signal reference	Serves as common return for collector current and gate drive reference; must be low-inductance layout to avoid shoot-through.

Key Features

Feature	Design Value
Ultrafast soft-recovery anti-parallel diode	50 ns t_rr, 240 µJ E_rec at 150°C - Minimizes voltage overshoot and EMI during freewheeling in bridge configurations.
10 µs short-circuit SOA	Rated at V_CC = 600 V, T_J = 150°C - Enables deterministic fault response without external current limiting in motor drive applications.
Positive V_CE(on) tempco	+1.2 mV/°C drift - Ensures inherent current sharing stability when paralleling multiple devices.
Square RBSOA	Full 20 A at 960 V with V_GE = +20 V → 0 V - Supports high-current pulse operation without secondary breakdown limitations.
Lead-free & RoHS compliant	Meets JEDEC J-STD-020 moisture sensitivity level 1 - Simplifies manufacturing flow and eliminates post-reflow baking requirements.

Applications

Industrial Motor Drive

Solar Inverter

Use Scenario: Three-phase inverter stage driving induction or PMSM motors in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-voltage IGBT switch in 2-level or 3-level NPC topology; handles 600–800 V DC link with 1–10 kHz PWM.

Use Value: 1.7 V V_CE(on) and 1.4°C/W R_θJC enable >98% efficiency at 8 A continuous output with compact heatsinking.

Use Scenario: DC-AC conversion stage in string inverters converting photovoltaic array output (600–1000 V DC).

IC Role / Device Role / Timing Role: Main switching element in H-bridge or multilevel inverter; operates with unipolar or bipolar modulation schemes.

Use Value: 1200 V V_CES rating provides 20% overvoltage margin against DC bus transients in PV systems.

Uninterruptible Power Supply

Welding Equipment

Use Scenario: Online double-conversion UPS output inverter delivering clean 50/60 Hz sine wave to critical loads.

IC Role / Device Role / Timing Role: IGBT in full-bridge inverter stage; switches at 4–16 kHz with sinusoidal PWM and active harmonic filtering.

Use Value: 10 µs short-circuit SOA allows fast desaturation-based protection during output short events without sacrificing reliability.

Use Scenario: Inverter-based arc welding power supply generating constant-current or pulsed output for SMAW/MIG processes.

IC Role / Device Role / Timing Role: Primary switching device in resonant or hard-switched inverter; handles high peak currents up to 20 A (I_LM).

Use Value: 20 A clamped inductive load current rating supports repetitive high-di/dt weld pulses without secondary breakdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN120N120B3	1200 V, 120 A, TO-247 package; higher current rating but 2.2 V V_CE(on) and 120 nC Q_g.	Targets higher-power inverters (>10 kW); requires larger gate driver and heatsink due to higher losses.	Select when system needs >10 A continuous current and can accommodate higher conduction and switching losses.
STMicroelectronics STGW40H120F2	1200 V, 40 A, TO-247 package; 1.9 V V_CE(on), 65 nC Q_g, and 15 µs SC SOA.	Balances current capacity and switching speed for mid-power solar and UPS; lacks integrated diode softness data.	Select when higher current headroom is needed and external diode optimization is acceptable.

Compared with IXGN120N120B3 and STGW40H120F2, IRG8P08N120KDPBF offers the lowest V_CE(on) and gate charge in its 8 A class, making it optimal for thermally constrained, efficiency-critical 3–5 kW motor drives where diode softness and short-circuit robustness are prioritized over raw current rating.

Availability

IRG8P08N120KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and uninterruptible power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRG8P08N120KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in high-voltage silicon and wide-bandgap devices.

This device belongs to Infineon's legacy High Voltage IGBT portfolio, designed specifically for rugged, high-efficiency switching in industrial energy conversion systems operating up to 1200 V DC bus.

FAQ

What is the maximum gate-emitter voltage rating for reliable operation?

The absolute maximum continuous gate-to-emitter voltage is ±30 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure fast, noise-immune switching and prevent Miller-induced false turn-on.

Does IRG8P08N120KDPBF require an external freewheeling diode?

No - it integrates a monolithic ultrafast soft-recovery anti-parallel diode rated for 11 A continuous forward current at 100°C and 20 A peak (I_FM). The diode's 50 ns t_rr and low E_rec eliminate need for external diodes in most bridge topologies.

How does thermal performance differ between TO-247AC and TO-220AB variants?

The TO-247AC package (IRG8P08N120KDPBF) has R_θJC(IGBT) = 1.4°C/W, while the TO-220AB variant (IRG8B08N120KDPBF) is 1.3°C/W. However, TO-247AC supports higher power dissipation (36 W at 100°C case vs. 36 W same), due to superior mechanical mounting and lower R_θCS (0.24 vs. 0.50°C/W).

Can this IGBT be paralleled for higher current handling?

Yes - its positive V_CE(on) temperature coefficient (1.2 mV/°C) ensures self-balancing current distribution across paralleled units. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsink mounting to minimize thermal imbalance.

IRG8P08N120KDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: 15 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 5A

Power - Max:: 89 W

Switching Energy:: 300µJ (on), 300µJ (off)

Input Type:: Standard

Gate Charge:: 45 nC

Td (on/off) @ 25°C:: 20ns/160ns

Test Condition:: 600V, 5A, 47Ohm, 15V

Reverse Recovery Time (trr):: 50 ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRG8P08N120KDPBF FAQ

1.How can I place an order for IRG8P08N120KDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG8P08N120KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG8P08N120KDPBF reliable?

The price and inventory of IRG8P08N120KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG8P08N120KDPBF is usually 5 days.

3.What payment methods are accepted for IRG8P08N120KDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG8P08N120KDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG8P08N120KDPBF?

IRG8P08N120KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG8P08N120KDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG8P08N120KDPBF?

For technical support, including IRG8P08N120KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG8P08N120KDPBF requirements.

6.How does Aetrix verify that IRG8P08N120KDPBF is sourced from the original manufacturer or authorized distributors?

All IRG8P08N120KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG8P08N120KDPBF meets industry standards.

7.What is the process for return or replacement of IRG8P08N120KDPBF?

All IRG8P08N120KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG8P08N120KDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG8P08N120KDPBF part is unused and in its original packaging.

Return procedure for IRG8P08N120KDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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