Infineon Technologies IRG8P60N120KDPBF

Overview

IRG8P60N120KDPBF from International Rectifier is a 1200 V, 60 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-247AC package, designed for high-voltage switching in industrial motor drives, UPS, and solar inverters. It delivers V_CE(on) = 1.7 V @ 40 A/15 V, 10 µs short-circuit SOA, and R_θJC(IGBT) = 0.3 °C/W.

For engineers reviewing the IRG8P60N120KDPBF datasheet, IRG8P60N120KDPBF pinout, IRG8P60N120KDPBF application, or IRG8P60N120KDPBF equivalent, key selection criteria include clamped inductive load current (I_LM = 160 A), reverse bias SOA rating, diode reverse recovery energy (E_rec = 1.8 mJ), and thermal resistance junction-to-case.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for 1200 V operation, featuring positive V_CE(on) temperature coefficient for stable parallel operation and square RBSOA up to 960 V. Its integrated diode exhibits soft reverse recovery (t_rr = 210 ns, I_rr = 21 A) with low E_rec, minimizing voltage overshoot during turn-off.

The device supports robust short-circuit protection with 10 µs SCSOA at T_J = 150°C and V_CC = 600 V, while its gate charge profile (Q_g = 230–345 nC) enables controlled switching with external gate resistor tuning (e.g., R_G = 5 Ω).

Key Specifications

Pinout & Package

TO-247AC package with isolated tab (collector connected to case); standard 3-pin through-hole outline measuring 15.8 × 20.1 × 4.9 mm. Mounting torque: 10 lbf·in (1.1 N·m).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN120N120B3 and IKW40N120H3, IRG8P60N120KDPBF offers optimal balance of conduction efficiency (1.7 V V_CE(on)), ruggedness (10 µs SC SOA), and integrated diode performance-making it ideal for 10–16 kHz industrial inverters requiring reliability over raw speed or current density.

Availability

IRG8P60N120KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply across multi-year production cycles.

Supply support for IRG8P60N120KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies since 2015) was a pioneer in power semiconductor innovation, specializing in high-efficiency IGBTs, MOSFETs, and driver ICs for industrial and renewable energy systems.

This device belongs to IR's "KDP" series of 1200 V field-stop IGBTs engineered specifically for high-reliability, medium-frequency inverter applications demanding low conduction loss, robust short-circuit capability, and integrated diode functionality.

FAQ

What is the maximum gate-emitter voltage rating for IRG8P60N120KDPBF?

The absolute maximum continuous gate-to-emitter voltage is ±30 V. Exceeding this rating risks permanent gate oxide damage. Gate drive circuits must clamp transient overshoot using Zener diodes or active clamping, especially during fast turn-off with stray inductance. The gate threshold voltage (V_GE(th)) is 5.0–6.5 V, requiring ≥12 V to ensure full enhancement and <10 V to guarantee safe turn-off.

Does IRG8P60N120KDPBF require a negative gate voltage for reliable turn-off?

No. The device is fully enhanced with +15 V gate drive and safely turned off with 0 V gate voltage; negative bias is not required. However, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-dV/dt environments such as multi-level inverters or high-power motor drives with long gate traces.

How does the integrated diode differ from standard FRD counterparts?

Its ultrafast soft-recovery diode has t_rr = 210 ns and exhibits soft recovery behavior (low I_rr slope and minimal voltage overshoot), unlike hard-recovery FRDs. This reduces EMI and stress on snubbers. Measured E_rec = 1.8 mJ at T_J = 150°C confirms suitability for bidirectional energy transfer without external diode replacement.

Can IRG8P60N120KDPBF be paralleled for higher current capacity?

Yes-its positive V_CE(on) temperature coefficient ensures natural current sharing across paralleled units. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and identical heatsink contact resistance. Derating total current by 15% is recommended to account for parameter spread and thermal coupling effects.