Infineon Technologies IRGB10B60KDPBF

Overview

IRGB10B60KDPBF from Infineon Technologies is a 600 V, 19 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-262 package. It features 1.8 V typical V_CE(on), 10 μs short-circuit capability, square RBSOA, and low EMI due to ultrasoft diode reverse recovery (t_rr = 90–105 ns, Q_rr = 22–47 nC). Used in motor control inverters for HVAC compressors and industrial drives.

For engineers reviewing the IRGB10B60KDPBF datasheet, IRGB10B60KDPBF pinout, IRGB10B60KDPBF application, or IRGB10B60KDPBF equivalent, key selection criteria include V_CE(on) temperature coefficient, clamped inductive load rating (I_LM = 44 A), diode forward voltage (V_FM = 1.30–1.45 V), and thermal resistance (R_θJC = 0.8 °C/W for IGBT).

Technical Context

This IGBT employs non-punch-through (NPT) technology with positive V_CE(on) temperature coefficient and 0.3 V/°C breakdown voltage drift, enabling stable parallel operation and predictable thermal derating. Its integrated diode exhibits ultrasoft recovery (I_rr = 19–22 A, E_rec = 245–330 μJ), minimizing voltage overshoot and snubber stress in hard-switched topologies.

The device supports full-square RBSOA up to 600 V and delivers benchmark efficiency in 3-phase motor control at switching frequencies ≤20 kHz. Gate charge parameters (Q_g = 38 nC, Q_gc = 16.3 nC) and switching losses (E_on = 230–340 μJ, E_off = 350–464 μJ at T_J = 150°C) are optimized for gate drive compatibility with standard ±15 V logic-level drivers.

Key Specifications

Pinout & Package

IRGB10B60KDPBF is housed in a TO-262 (ISOWATT218) package with 3 leads: Collector (tab), Gate, and Emitter. The metal tab is electrically connected to the collector and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IRG4PH60UD-EP and FGH60N60SMD, IRGB10B60KDPBF offers optimal balance of low conduction loss, integrated soft diode, compact TO-262 footprint, and proven 10 μs fault tolerance-making it ideal for space-constrained 3–5 kW motor drives where reliability and EMI performance are prioritized.

Availability

IRGB10B60KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, HVAC compressor inverters, and welding power supplies requiring stable component supply and long-term production continuity.

Supply support for IRGB10B60KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This device belongs to Infineon's "High Voltage IGBTs" product line, engineered specifically for medium-power motor control and industrial switching applications demanding high ruggedness, low EMI, and integrated diode functionality.

FAQ

What is the maximum gate-emitter voltage rating for IRGB10B60KDPBF?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −10 V for turn-off to ensure fast, robust switching and minimize Miller-induced false turn-on. Gate resistor selection must maintain dV/dt < 5 V/ns at the gate node under worst-case conditions.

Does IRGB10B60KDPBF require an external freewheeling diode?

No. IRGB10B60KDPBF integrates an ultrafast soft-recovery anti-parallel diode with V_FM = 1.30–1.45 V and t_rr = 90–105 ns. This diode is rated for continuous forward current up to 35 A at T_C = 25°C and 19 A at T_C = 100°C, matching the IGBT's current capability and eliminating need for discrete diode placement in standard inverter legs.

How does the 10 μs short-circuit capability translate to real-world protection?

The 10 μs rating is validated at T_J = 150°C with V_CE = 600 V and zero gate drive removal delay. In practice, this allows time for external desaturation detection circuits (typically 3–6 μs response) to trigger shutdown before thermal runaway. It does not imply safe operation without protection-designs must still implement fast-acting desat or overcurrent monitoring.

Can IRGB10B60KDPBF be paralleled with other IGBTs for higher current capacity?

Yes. Its positive V_CE(on) temperature coefficient and square RBSOA enable stable current sharing. Successful paralleling requires matched gate drive impedance (<±5% variation), symmetrical PCB layout (equal trace length/inductance), and mechanical mounting that ensures uniform thermal coupling. Derating total current by 15% is recommended for long-term reliability.