Infineon Technologies IRGB15B60KDPBF

Overview

IRGB15B60KDPBF from Infineon Technologies is a 600 V, 15 A insulated gate bipolar transistor (IGBT) in TO-262 package with integrated ultrafast soft-recovery anti-parallel diode, V_CE(on) = 1.8 V (typ.) at I_C = 15 A and V_GE = 15 V, 10 µs short-circuit capability, and square RBSOA - designed for high-efficiency motor control inverters in industrial drives and HVAC compressors.

For engineers reviewing the IRGB15B60KDPBF datasheet, IRGB15B60KDPBF pinout, IRGB15B60KDPBF application, or IRGB15B60KDPBF equivalent, key selection criteria include its 1.20–1.45 V diode forward voltage (V_FM), 92–111 ns reverse recovery time (t_rr), 540–720 µJ diode reverse recovery energy (E_rec), and ±20 V gate voltage rating - all critical for EMI-sensitive, high-switching-frequency inverter designs.

Technical Context

This IGBT employs non-punch-through (NPT) technology with positive V_CE(on) temperature coefficient and low 0.6 °C/W junction-to-case thermal resistance (R_θJC) for the IGBT die. Its integrated diode features ultrasoft reverse recovery (t_rr ≤ 111 ns, I_rr ≤ 33 A) and low V_FM (≤1.45 V), enabling reduced switching losses and snubber-free operation in hard-switched topologies.

The device supports robust parallel operation due to current-sharing stability across temperature (via positive V_CE(on) TC) and exhibits full square RBSOA up to 600 V with 10 µs short-circuit withstand capability at T_J = 150 °C - validated under V_CC = 400 V, R_G = 22 Ω conditions.

Key Specifications

Pinout & Package

IRGB15B60KDPBF is housed in a TO-262 (I²PAK) package with three terminals: Collector (tab), Emitter (pin 1), and Gate (pin 2). The metal tab is electrically connected to the collector and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-inverter applications.

Compared with IRGB15B60KDPBF, IRG4PH50UD-EP offers higher current headroom but demands external diode integration and increases gate drive complexity, while FGH40N60UFD trades 15% higher conduction loss for 2.7× current rating and broader SOA - making IRGB15B60KDPBF optimal for compact, high-efficiency 1–3 kW motor drives.

Availability

IRGB15B60KDPBF is available at Aetrix Electronics and suitable for industrial motor inverters, HVAC compressor drives, and welding power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRGB15B60KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's "High Voltage IGBTs with Soft Diodes" product line, engineered specifically for high-efficiency, low-EMI motor control inverters operating at 10–50 kHz with stringent reliability requirements.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 22 Ω for characterization at T_J = 150 °C. For stable operation, R_G should not exceed 47 Ω to maintain t_d(off) ≤ 226 ns and prevent excessive E_off rise. Lower values (10–15 Ω) are advised for >20 kHz PWM to limit di/dt-induced voltage overshoot.

Can IRGB15B60KDPBF be used in parallel configurations?

Yes - its positive V_CE(on) temperature coefficient and matched diode characteristics enable stable current sharing. Layout must ensure symmetrical gate drive paths, identical emitter trace inductance (<5 nH), and shared heatsink mounting with uniform thermal interface pressure.

Is the TO-262 package electrically isolated?

No - the metal tab is internally connected to the collector terminal. Electrical isolation requires a dielectric thermal pad (e.g., Bergquist Sil-Pad 2000) between tab and heatsink, with minimum creepage distance of 4 mm for 600 V systems per IEC 61800-5-1.

What is the maximum allowable di/dt during diode commutation?

Based on Fig. 19, peak reverse recovery current I_rr remains ≤33 A up to di_F/dt = 1000 A/µs at T_J = 150 °C. For reliable operation, limit di/dt to ≤600 A/µs using optimized PCB layout and gate drive slew rate control to avoid secondary breakdown.