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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGB20B60PD1PBF

Name: IRGB20B60PD1PBF
Brand: Infineon Technologies
SKU: IRGB20B60PD1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGB20B60PD1PBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRGB20B60PD1PBF.pdf

Description:: IGBT 600V 40A 215W TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGB20B60PD1PBF from Infineon Technologies is a 600 V, 20 A NPT IGBT with co-packaged HEXFRED ultrafast soft-recovery diode in TO-220AB package, designed for high-efficiency switch-mode power supplies operating up to 150 kHz. It delivers V_CE(on) = 2.05 V @ 13 A/15 V, minimal tail current, and R_θJC(IGBT) = 0.58 °C/W for telecom SMPS and PFC circuits.

For engineers reviewing the IRGB20B60PD1PBF datasheet, IRGB20B60PD1PBF pinout, IRGB20B60PD1PBF application, or IRGB20B60PD1PBF equivalent, key selection criteria include V_CE(SAT) stability over temperature, diode reverse recovery charge (Q_rr = 40–60 nC), RBSOA compliance at 480 V, and thermal resistance matching for parallel operation in UPS inverters.

Technical Context

This IGBT uses Non-Punch-Through (NPT) technology with positive temperature coefficient for stable parallel operation. Its gate threshold voltage (V_GE(th) = 3.0–5.0 V) and transconductance (g_fe = 19 S) support robust drive margin across –40°C to +150°C junction range.

The integrated HEXFRED diode provides soft reverse recovery (t_rr = 28–42 ns @ 25°C, 38–57 ns @ 125°C) and low forward voltage (V_FM = 1.4–1.7 V @ 4 A/125°C), minimizing switching loss coupling and EMI in ZVS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports 400 V DC bus designs with 20% margin for transient overvoltage in telecom SMPS
V_CE(on) typ.	2.05 V @ 13 A/15 V - enables <2.7 W conduction loss at rated current, reducing heatsink requirements
E_off typ.	100 µJ @ 13 A/390 V - contributes to total switching loss of 195 µJ, enabling 150 kHz operation with low thermal stress
Q_rr	40–60 nC @ 25°C - low stored charge minimizes diode-induced voltage spikes during turn-on of complementary switches
R_θJC (IGBT)	0.58 °C/W - allows direct mounting to heatsinks without thermal interface pads for compact 215 W dissipation at 25°C case
t_r/t_f	5.0–7.0 / 6.0–8.0 ns @ 25°C - fast edge rates reduce dead-time losses but require careful gate drive impedance control (R_G = 10 Ω typical)
I_C cont. @ T_C = 100°C	22 A - defines maximum continuous output current in forced-air-cooled industrial PFC modules

Pinout & Package

TO-220AB package with isolated tab, 3-pin through-hole mounting, and 1.1 N·m screw torque rating. Case-to-sink thermal resistance R_θCS = 0.50 °C/W on flat greased surface.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC bus or transformer primary; carries full load current and must be routed with low-inductance layout
Gate (G)	Control input	Requires 15 V drive with ≤10 Ω series resistance to limit dV/dt-induced false turn-on; internal R_G = 4.3 Ω
Emitter (E)	Power return and signal reference	Serves as common return for IGBT and co-pack diode; must be low-impedance path to driver ground to avoid shoot-through

Key Features

Feature	Design Value
NPT structure with positive tempco	Enables stable current sharing in paralleled configurations without external emitter resistors
Ultrafast soft-recovery diode (HEXFRED)	Reduces EMI and voltage overshoot during commutation by limiting di/dt and eliminating hard reverse recovery snap-off
Tighter parameter distribution	±10% V_CE(on) and ±15% Q_g tolerance simplifies gate driver design and system-level loss modeling
Low parasitic capacitances	C_ies = 1560 pF, C_res = 20 pF - improves Miller immunity and reduces gate drive power in high-frequency PFC stages
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile with peak soldering temperature of 300°C for 10 sec

Applications

Telecom SMPS

PFC Circuits

Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers with universal AC input and 48 V DC output.

IC Role / Device Role / Timing Role: Main power switch in hard-switched forward or LLC resonant converter stage, operating at 100–150 kHz.

Use Value: Low V_CE(on) and minimal tail current reduce conduction loss by >15% vs. legacy IGBTs, improving efficiency from 92% to 93.5% at full load.

Use Scenario: Boost switch in active front-end PFC for server PSUs meeting 80 PLUS Titanium requirements.

IC Role / Device Role / Timing Role: High-current, high-voltage switch handling 10–22 A continuous current with zero-voltage switching assist.

Use Value: Soft-recovery diode eliminates need for external snubbers, reducing BOM count and PCB area while maintaining THD <5% at 230 VAC.

UPS Inverters

Consumer Power Supplies

Use Scenario: Output H-bridge switching in online double-conversion UPS systems delivering clean 230 VAC sine wave.

IC Role / Device Role / Timing Role: IGBT in leg configuration driving transformer-coupled output, switching at 16–20 kHz with sinusoidal PWM.

Use Value: RBSOA compliance up to 480 V and 80 A pulse current ensures reliable operation during battery-mode overload transients.

Use Scenario: Main switch in compact 300–600 W LCD TV or gaming PSU with high power density target.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback or asymmetric half-bridge topology.

Use Value: TO-220AB package enables manual assembly and cost-effective thermal management without heatsink fans, reducing system height and noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP20NC60WD	V_CE(SAT) = 2.2 V @ 10 A; t_rr = 35 ns; R_θJC = 0.65 °C/W	Higher conduction loss and lower thermal performance limit max continuous current to 18 A @ 100°C	Prefer when existing STMicro design ecosystem and gate drive compatibility are prioritized over peak efficiency
IXGH20N60C3D1	V_CE(SAT) = 2.1 V @ 15 A; Q_rr = 55 nC; TO-247 package	Larger footprint and higher thermal resistance (0.45 °C/W) require larger heatsink but enable 25 A continuous rating	Select for higher-power PFC stages where board space permits TO-247 and 25 A capability justifies added cost

Compared with STGP20NC60WD and IXGH20N60C3D1, IRGB20B60PD1PBF offers the lowest thermal resistance in TO-220AB form factor and tightest V_CE(on) distribution-critical for multi-phase PFC where current imbalance must stay below ±5%.

Availability

IRGB20B60PD1PBF is available at Aetrix Electronics and suitable for telecom rectifiers, active PFC modules, and UPS inverter stages requiring stable component supply, long-lifecycle availability, and consistent parametric performance across production batches.

Supply support for IRGB20B60PD1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

This device belongs to the WARP2 series of IGBTs engineered specifically for high-frequency, high-efficiency switch-mode power conversion-emphasizing low switching loss, soft diode recovery, and parallel-operability in telecom and server infrastructure.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 10 Ω for standard 125°C switching characterization. Using R_G > 22 Ω increases turn-off delay (t_d(off)) beyond 140 ns and risks incomplete turn-off under high di/dt conditions. For ZVS applications, 5–10 Ω is optimal to balance switching speed and gate oscillation damping.

Can IRGB20B60PD1PBF replace a MOSFET in a 100 kHz flyback design?

Yes-its FET-equivalent ID = 20 A and R_CE(on) = 158 mΩ allow direct substitution where V_DS rating and conduction loss are comparable. However, gate drive must supply ≥15 V (not 10 V) and account for higher Q_g (68–102 nC) versus typical 600 V MOSFETs.

Is the co-packaged diode electrically isolated from the IGBT die?

No-the diode shares the same emitter terminal (E) with the IGBT and is monolithically integrated in the same package. Its cathode connects internally to the IGBT collector, forming a standard anti-parallel configuration ideal for bridge-leg and PFC boost applications.

What thermal derating applies above 100°C case temperature?

Continuous collector current drops linearly from 22 A at 100°C to 0 A at 150°C per Fig. 1. Power dissipation follows Fig. 2: 86 W at 100°C de-rates to ~35 W at 125°C case, requiring forced air or liquid cooling for sustained operation above 110°C.

IRGB20B60PD1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 20A

Power - Max:: 215 W

Switching Energy:: 95µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 68 nC

Td (on/off) @ 25°C:: 20ns/115ns

Test Condition:: 390V, 13A, 10Ohm, 15V

Reverse Recovery Time (trr):: 28 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRGB20B60PD1PBF FAQ

1.How can I place an order for IRGB20B60PD1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGB20B60PD1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGB20B60PD1PBF reliable?

The price and inventory of IRGB20B60PD1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGB20B60PD1PBF is usually 5 days.

3.What payment methods are accepted for IRGB20B60PD1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGB20B60PD1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGB20B60PD1PBF?

IRGB20B60PD1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGB20B60PD1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGB20B60PD1PBF?

For technical support, including IRGB20B60PD1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGB20B60PD1PBF requirements.

6.How does Aetrix verify that IRGB20B60PD1PBF is sourced from the original manufacturer or authorized distributors?

All IRGB20B60PD1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGB20B60PD1PBF meets industry standards.

7.What is the process for return or replacement of IRGB20B60PD1PBF?

All IRGB20B60PD1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGB20B60PD1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGB20B60PD1PBF part is unused and in its original packaging.

Return procedure for IRGB20B60PD1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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