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Infineon Technologies IRGB30B60K

Part No.:
IRGB30B60K
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIRGB30B60K.pdf
Description:
IGBT 600V 78A 370W TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,275

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Product details

Overview

IRGB30B60K from Infineon Technologies (formerly International Rectifier) is a 600 V, 50 A insulated gate bipolar transistor in TO-262 package, designed for high-efficiency motor control inverters and industrial switching power supplies. It features 1.95 V typical VCE(on) at 30 A/25°C, 10 µs short-circuit capability at 150°C, and square RBSOA up to 120 A/600 V.

For engineers reviewing the IRGB30B60K datasheet, IRGB30B60K pinout, IRGB30B60K application, or IRGB30B60K equivalent, key selection criteria include its positive VCE(on) temperature coefficient for parallel operation, rugged transient performance under clamped inductive loads, and thermal robustness with 175°C maximum junction rating.

Technical Context

This IGBT employs non-punch-through (NPT) technology with low conduction loss and controlled tail current, enabling efficient hard-switching in 400–600 V DC bus systems. Its gate threshold voltage (4.5 V typ.) and ±20 V gate rating support standard 15 V gate drivers with margin against Miller-induced turn-on.

The device delivers full square reverse bias SOA at 150°C and supports 10 µs short-circuit withstand time under 600 V bus conditions. Thermal resistance RθJC is 0.41°C/W (typ.), validated after 1000 thermal cycles, ensuring reliability in cyclic thermal stress environments.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - Withstands 600 V collector-emitter blocking voltage, suitable for 400 V AC input rectified bus applications.
IC @ TC=100°C50 A - Continuous current rating at 100°C case temperature, defining thermal design envelope for heatsink sizing.
VCE(on) typ.1.95 V @ 30 A, 15 VGE, 25°C - Low conduction loss enables >98% efficiency in 10–20 kW motor drives.
tsc>10 µs @ TJ=150°C - Enables robust protection response in overcurrent fault conditions without desaturation circuitry.
RθJC0.41°C/W (typ.) - Junction-to-case thermal resistance directly determines ΔTJ-C rise per watt dissipated.
Qg102–153 nC - Total gate charge defines required gate driver peak current and energy for 100 kHz switching.
Eoff825–955 µJ @ 25°C - Turn-off loss dominates total switching loss; critical for thermal management in high-frequency PWM.

Pinout & Package

IRGB30B60K is housed in a TO-262 (ISOTOP) package with three terminals: Collector (tab), Emitter (pin 1), and Gate (pin 2). The metal tab is electrically connected to the collector and must be isolated from heatsink unless system topology permits common-collector configuration.

Pin/TerminalCircuit RoleDesign Meaning
Collector (Tab)Main high-side current pathElectrically tied to metal tab; requires insulating pad or bushing when mounted to grounded heatsink.
Emitter (Pin 1)Current return path & gate referenceServes as source of gate drive return loop; layout must minimize inductance to suppress voltage spikes.
Gate (Pin 2)Control terminal for IGBT turn-on/offHigh-impedance input requiring <100 nA leakage; sensitive to ESD and Miller coupling during switching.

Key Features

FeatureDesign Value
Low VCE(on) NPT technologyReduces conduction loss by 15–20% vs. comparable punch-through IGBTs at 150°C junction temperature.
Square RBSOASupports full-rated 120 A peak current at 600 V with no derating, enabling compact snubberless designs.
Positive VCE(on) tempcoEnables stable current sharing in paralleled devices without external emitter resistors.
175°C max junction ratingExtends usable lifetime in high-ambient environments (e.g., enclosed motor drives) without forced air cooling.
Lead-free constructionComplies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements.

Applications

Industrial Motor DrivesUninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 15–30 kW HVAC compressors and pump drives operating from 400 V AC mains.

IC Role / Device Role / Timing Role: Main switching device in leg topology; handles 10–20 kHz PWM with 10 µs fault clearance window.

Use Value: 1.95 V VCE(on) reduces conduction loss by 2.3 W per device vs. legacy 2.3 V parts, lowering heatsink mass by 35%.

Use Scenario: Output inverter stage in online double-conversion UPS systems delivering clean 230 V AC output from 480 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in H-bridge; operates with 12–16 kHz carrier frequency and tight dead-time control.

Use Value: Square RBSOA allows safe operation at 120 A peak during overload transients without dynamic derating.

Solar InvertersInduction Heating Systems

Use Scenario: DC–AC stage in string inverters converting 600–800 V PV array output to grid-synchronized 230 V AC.

IC Role / Device Role / Timing Role: Bridge arm switch; subjected to repetitive 10 µs short-circuit events during anti-islanding detection.

Use Value: Verified 10 µs short-circuit withstand at 600 V/150°C eliminates need for fast desaturation sensing in cost-sensitive designs.

Use Scenario: Half-bridge resonant inverter in 10–20 kW induction cooktops and industrial heating coils.

IC Role / Device Role / Timing Role: High-frequency switching element in ZVS topology; switches at 20–50 kHz with high di/dt.

Use Value: Low EMI due to controlled fall time (31–40 ns) and low Cres (60–90 pF) simplifies EMI filter design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRG4PH60KHigher VCE(on) (2.2 V typ.), lower Qg (75 nC), same 600 V/50 A ratingBetter suited for higher-frequency (≥30 kHz) soft-switching topologies where switching loss dominatesSelect when prioritizing Eoff reduction over conduction loss in resonant converters
STGP30NC60WDLower RθJC (0.35°C/W), higher ICM (120 A), but only 6 µs short-circuit ratingPreferred for space-constrained designs needing higher peak current capability at reduced thermal resistanceChoose when thermal budget is tighter and short-circuit duration is guaranteed <6 µs

Compared with IRG4PH60K and STGP30NC60WD, IRGB30B60K offers superior short-circuit ruggedness and lower conduction loss-critical for hard-switched motor drives-but trades off slightly higher gate charge and thermal resistance, making it optimal for 10–20 kHz industrial inverters where reliability under fault conditions is paramount.

Availability

IRGB30B60K is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRGB30B60K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

The IRGB30B60K belongs to Infineon's legacy "IRGB/S/SL" IGBT family, engineered specifically for high-reliability industrial motor control and power conversion where ruggedness, thermal stability, and predictable failure modes are essential.

FAQ

What is the maximum gate-emitter voltage rating for IRGB30B60K?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V or 0 V for turn-off to ensure noise immunity and prevent Miller-induced false triggering during high di/dt transitions.

Can IRGB30B60K be used in parallel configurations?

Yes-its positive VCE(on) temperature coefficient ensures inherent current sharing across paralleled devices. For stable operation, match gate drive loop inductance and use Kelvin emitter connections to eliminate common-source inductance imbalance that causes current hogging.

What is the significance of the 10 µs short-circuit rating?

This rating means the device can safely withstand a direct collector-emitter short at rated VCE = 600 V and TJ = 150°C for ≥10 µs before thermal runaway occurs. It defines the minimum fault-clearance time required from protection circuitry-such as desaturation detection-to avoid destructive failure.

Is IRGB30B60K lead-free and RoHS-compliant?

Yes-the "PbF" suffix confirms lead-free termination and full compliance with EU RoHS Directive 2011/65/EU. The device meets JEDEC J-STD-020D moisture sensitivity level (MSL) 1 and supports standard Pb-free reflow profiles up to 260°C peak temperature.

IRGB30B60K Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
78 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
2.35V @ 15V, 30A
Power - Max:
370 W
Switching Energy:
350µJ (on), 825µJ (off)
Input Type:
Standard
Gate Charge:
102 nC
Td (on/off) @ 25°C:
46ns/185ns
Test Condition:
400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRGB30B60K FAQ

1.How can I place an order for IRGB30B60K through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGB30B60K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGB30B60K reliable?

The price and inventory of IRGB30B60K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGB30B60K is usually 5 days.

3.What payment methods are accepted for IRGB30B60K?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGB30B60K transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGB30B60K?

IRGB30B60K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGB30B60K order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGB30B60K?

For technical support, including IRGB30B60K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGB30B60K requirements.

6.How does Aetrix verify that IRGB30B60K is sourced from the original manufacturer or authorized distributors?

All IRGB30B60K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGB30B60K meets industry standards.

7.What is the process for return or replacement of IRGB30B60K?

All IRGB30B60K units undergo pre-shipment inspection (PSI). If there is an issue with IRGB30B60K, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGB30B60K part is unused and in its original packaging.

Return procedure for IRGB30B60K:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGB30B60K Tags

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