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Infineon Technologies IRGB4061DPBF

Part No.:
IRGB4061DPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIRGB4061DPBF.pdf
Description:
IGBT 600V 36A 206W TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,076

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Product details

Overview

IRGB4061DPBF from Infineon Technologies is a 600 V, 18 A (TC = 100°C), n-channel insulated gate bipolar transistor with integrated ultrafast soft-recovery co-pack diode in TO-220AB package. It delivers VCE(on) = 1.65 V (typ.) at 15 V gate drive and 25°C, supports 5 μs short-circuit SOA, and operates up to TJ(max) = 175°C - enabling high-efficiency motor drives and industrial inverters.

For engineers reviewing the IRGB4061DPBF datasheet, IRGB4061DPBF pinout, IRGB4061DPBF application, or IRGB4061DPBF equivalent, key selection criteria include its trench IGBT architecture, square RBSOA, 100% 4× rated current (ILM) testing, tight parameter distribution, and co-pack diode's 100 ns reverse recovery time at 175°C.

Technical Context

This IGBT uses trench-gate field-stop technology to achieve low conduction loss and controlled tail current, enabling efficient operation across 1–20 kHz switching frequencies in hard-switched topologies. Its positive VCE(on) temperature coefficient ensures stable current sharing in parallel configurations.

The integrated ultrafast soft-recovery diode features Erec = 260 μJ and trr = 100 ns at TJ = 175°C, minimizing voltage overshoot and EMI during freewheeling. The device meets full square RBSOA up to 600 V and supports 5 μs short-circuit withstand under VCC = 400 V, RG = 22 Ω conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - Maximum blocking voltage for 400 V DC bus designs with 20% margin
IC @ TC = 100°C 18 A - Continuous output current capability at heatsink temperature of 100°C
VCE(on) (typ.) 1.65 V @ IC = 18 A, VGE = 15 V, TJ = 25°C - Low conduction loss enabling <95% efficiency in 5 kW inverters
tSC ≥5 μs - Short-circuit withstand time under VCC = 400 V, enabling robust fault handling without desaturation circuitry
Eoff 405 μJ @ IC = 18 A, VCC = 400 V, RG = 22 Ω, TJ = 25°C - Enables 10–15 kHz operation with <1.5 W switching loss per device
trr (diode) 100 ns @ IF = 18 A, TJ = 175°C - Ultrafast soft recovery reduces voltage spikes and snubber requirements
RθJC (IGBT) 0.73 °C/W - Thermal resistance from junction to case enables 103 W dissipation at TC = 100°C

Pinout & Package

IRGB4061DPBF is housed in a TO-220AB package with isolated mounting tab, rated for 10 lbf·in (1.1 N·m) screw torque and 300°C soldering tolerance at 1.6 mm from case. The three-terminal configuration supports direct heatsink mounting and standard PCB footprint compatibility.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main power output terminal Connected to DC bus high-side; carries full load current and handles 600 V blocking
Gate (G) Control input Receives ±20 V max gate drive; 35 nC total gate charge requires optimized driver strength
Emitter (E) Power return and reference node Serves as common source for IGBT and co-pack diode; critical for low-inductance layout

Key Features

Feature Design Value
Low VCE(on) trench IGBT 1.65 V typ. at 18 A/25°C - reduces conduction loss by ≥25% vs. planar IGBTs in same package
Ultrafast soft-recovery co-pack diode trr = 100 ns, Erec = 260 μJ at 175°C - eliminates need for external fast diodes in H-bridge legs
Square RBSOA Rated up to 600 V with full pulse width - supports reliable operation under inductive turn-off stress
5 μs short-circuit SOA Validated at VCC = 400 V, RG = 22 Ω - simplifies protection design in motor control applications
Positive VCE(on) tempco Ensures inherent current balancing - enables stable parallel operation without emitter resistors

Applications

Industrial Motor Drives Uninterruptible Power Supplies

Use Scenario: Three-phase 3–5 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switch in IGBT half-bridge modules, operating at 8–12 kHz PWM frequency with 15 V gate drive.

Use Value: 1.65 V VCE(on) and 405 μJ Eoff enable >96% system efficiency at full load while maintaining thermal margin at TC = 100°C.

Use Scenario: Online double-conversion UPS inverters delivering clean 230 VAC output from 400 VDC bus.

IC Role / Device Role / Timing Role: Output stage IGBT in full-bridge inverter, synchronized to DSP-controlled 16 kHz SPWM waveform.

Use Value: 5 μs short-circuit SOA and square RBSOA allow safe operation during AC line faults without desat detection latency.

Solar Inverters Induction Heating Systems

Use Scenario: String inverters converting 600 V PV array output to grid-synchronized 230 VAC.

IC Role / Device Role / Timing Role: DC-link switch in two-level inverter topology, switching at 12–16 kHz with SiC-compatible gate drivers.

Use Value: Integrated soft-recovery diode eliminates external anti-parallel diode, reducing BOM count and layout area by 30%.

Use Scenario: Resonant half-bridge inverters driving 20–50 kHz induction coils for metal heating.

IC Role / Device Role / Timing Role: Main switching element in ZVS-capable topology, leveraging low Qgc (25 nC) for reduced driver loss.

Use Value: Tight parameter distribution (±10% VCE(on), ±15% Eoff) ensures consistent resonant frequency across production units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGW40H65DFB 650 V/40 A, higher IC rating but 2.1 V VCE(on) (typ.), no co-pack diode Requires external ultrafast diode; better suited for higher-current, lower-frequency (<5 kHz) applications Select when higher current headroom is needed and discrete diode integration is acceptable
IXYS IXGN50N60B3 600 V/50 A, 2.2 V VCE(on), 10 μs SC SOA, no integrated diode Larger die size increases switching loss; requires separate diode and more complex gate drive Prefer for legacy designs requiring proven reliability at 175°C, but adds BOM and layout complexity

Compared with STGW40H65DFB and IXGN50N60B3, IRGB4061DPBF offers superior conduction efficiency (1.65 V vs. ≥2.1 V), integrated diode simplification, and tighter parameter spread - making it optimal for cost-sensitive, space-constrained 3–5 kW industrial inverters where thermal margin and EMI control are critical.

Availability

IRGB4061DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term lifecycle support.

Supply support for IRGB4061DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IRGB4061DPBF belongs to Infineon's "High Voltage IGBTs" product line, designed specifically for medium-power industrial switching applications demanding high efficiency, ruggedness, and integrated diode functionality in standard through-hole packages.

FAQ

What is the maximum gate-emitter voltage rating for IRGB4061DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks gate oxide degradation; recommended gate drive is +15 V / –5 V to ensure reliable turn-on and fast, low-loss turn-off.

Does IRGB4061DPBF require an external freewheeling diode?

No - IRGB4061DPBF integrates an ultrafast soft-recovery co-pack diode rated for 18 A continuous forward current at TC = 100°C. This eliminates the need for an external diode in standard half-bridge or inverter leg configurations, reducing component count and layout complexity.

What is the thermal resistance from junction to case for the IGBT portion?

The typical thermal resistance from junction to case (RθJC) for the IGBT is 0.73 °C/W, measured under steady-state conditions. This value enables 103 W power dissipation at TC = 100°C and is validated via JEDEC JESD51-14 transient dual-interface testing.

How does the 5 μs short-circuit SOA impact system protection design?

The 5 μs short-circuit withstand capability allows time for overcurrent detection and shutdown without device failure. When paired with a gate driver featuring <1 μs response (e.g., Infineon 1ED020I12FA), it enables robust protection using simple current-sense resistor + comparator - eliminating need for complex desaturation circuits.

IRGB4061DPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
36 A
Current - Collector Pulsed (Icm):
72 A
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 18A
Power - Max:
206 W
Switching Energy:
95µJ (on), 350µJ (off)
Input Type:
Standard
Gate Charge:
35 nC
Td (on/off) @ 25°C:
40ns/105ns
Test Condition:
400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr):
100 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRGB4061DPBF FAQ

1.How can I place an order for IRGB4061DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGB4061DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGB4061DPBF reliable?

The price and inventory of IRGB4061DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGB4061DPBF is usually 5 days.

3.What payment methods are accepted for IRGB4061DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGB4061DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGB4061DPBF?

IRGB4061DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGB4061DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGB4061DPBF?

For technical support, including IRGB4061DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGB4061DPBF requirements.

6.How does Aetrix verify that IRGB4061DPBF is sourced from the original manufacturer or authorized distributors?

All IRGB4061DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGB4061DPBF meets industry standards.

7.What is the process for return or replacement of IRGB4061DPBF?

All IRGB4061DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGB4061DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGB4061DPBF part is unused and in its original packaging.

Return procedure for IRGB4061DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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