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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGB4620DPBF

Name: IRGB4620DPBF
Brand: Infineon Technologies
SKU: IRGB4620DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGB4620DPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRGB4620DPBF.pdf

Description:: IGBT 600V 32A 140W TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGB4620DPBF from Infineon Technologies is a 600 V, 20 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-220AB package. It delivers 1.55 V typical V_CE(on) at 12 A/15 V_GE, supports 5 µs short-circuit SOA, and operates up to 175°C junction temperature-designed for industrial motor drives, UPS inverters, and welding power stages.

For engineers reviewing the IRGB4620DPBF datasheet, IRGB4620DPBF pinout, IRGB4620DPBF application, or IRGB4620DPBF equivalent, key selection criteria include its square RBSOA at 175°C, positive V_CE(on) temperature coefficient for parallel operation, and low 25 nC total gate charge enabling efficient high-frequency switching in hard-switched topologies.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for balanced conduction and switching losses. Its integrated diode features soft reverse recovery (t_rr = 68 ns, Q_rr = 12 µC at T_J = 175°C) and low forward voltage (V_F = 2.1 V typ. at 12 A), minimizing commutation stress in bridge configurations.

The device's 1.07 °C/W junction-to-case thermal resistance (TO-220AB) and rugged 5 µs short-circuit withstand capability enable reliable operation under transient overloads in unidirectional DC-link switching applications without external desaturation protection circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands full DC bus voltage in 400 V AC input rectified systems with margin.
I_C @ T_C = 100°C	20 A - Continuous output current rating under real heatsink conditions in motor drive H-bridges.
V_CE(on) typ.	1.55 V @ 12 A - Low conduction loss enables >98% efficiency in 10–20 kHz PWM inverters.
t_SC	≥5 µs - Enables robust hardware-based short-circuit protection using fixed-time blanking.
T_J(max)	175°C - Supports high ambient operation in enclosed industrial enclosures without derating.
Q_g	25 nC - Gate drive energy compatible with standard ±15 V IGBT drivers (e.g., IR2110, ISO5852S).
R_θJC	1.07 °C/W - Thermal path allows 70 W dissipation at 100°C case temperature per JEDEC JESD51-2.

Pinout & Package

IRGB4620DPBF uses the TO-220AB package: isolated mounting flange, 3-pin vertical lead frame, 1.1 N·m maximum mounting torque. The plastic body provides creepage/clearance compliant with IEC 61800-5-1 for 600 V systems.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Collector (C)	Main high-side current path; electrically connected to metal tab-requires isolation washer when mounted to heatsink.
Pin 2 (Middle)	Gate (G)	High-impedance MOS-controlled terminal; requires <22 Ω series gate resistor to limit dV/dt-induced turn-on during Miller plateau.
Pin 3 (Right)	Emitter (E)	Low-side reference node; ties to source of anti-parallel diode and serves as return path for gate drive current.

Key Features

Feature	Design Value
Square RBSOA at 175°C	Supports 48 A clamped inductive load at 480 V without second breakdown-enables robust hard-switched flyback and resonant converters.
Positive V_CE(on) tempco	Enables stable current sharing across ≥3 paralleled devices without emitter resistors in high-power motor drives.
Ultrafast soft-recovery diode	68 ns t_rr, 19 A I_RR, softness factor >1.2-reduces EMI and snubber losses in bidirectional energy transfer circuits.
5 µs short-circuit SOA	Allows use of simple fixed-delay desat detection (e.g., DESAT pin on gate drivers) without complex current-sense amplifiers.

Applications

Industrial Motor Drive

Inverter Systems

Use Scenario: 3-phase VFD driving 5–10 kW induction motors in HVAC compressors and conveyor systems.

IC Role / Device Role / Timing Role: High-side switch in six-pack IGBT module replacement configuration operating at 8–16 kHz PWM frequency.

Use Value: 1.55 V V_CE(on) reduces conduction loss by 18% vs. legacy 2.1 V IGBTs, lowering heatsink size by 35% at 40°C ambient.

Use Scenario: DC-AC conversion stage in 3 kVA uninterruptible power supply with battery backup.

IC Role / Device Role / Timing Role: Output stage switch handling bidirectional energy flow during line/battery transitions.

Use Value: Integrated soft diode eliminates need for external fast recovery diodes, reducing BOM count and layout area by 22 mm².

Welding Power Supply

Induction Heating

Use Scenario: Primary-side switching in IGBT-based inverter welder delivering 200–300 A DC output.

IC Role / Device Role / Timing Role: Hard-switched main switch operating at 20–50 kHz with 50% duty cycle and high di/dt (>500 A/µs).

Use Value: 5 µs short-circuit withstand time aligns with welder arc-fault detection window, enabling single-chip protection without auxiliary sensing.

Use Scenario: Resonant half-bridge in 10–30 kW medium-frequency induction heater for metal forging.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) enabled by low C_res (23 pF) and soft diode recovery in LLC topology.

Use Value: 23 pF reverse transfer capacitance minimizes Miller effect, allowing stable 100 kHz operation with 22 Ω gate resistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30NC60WD	600 V/30 A, TO-247, 2.2 V V_CE(on), no integrated diode	Requires external ultrafast diode; higher conduction loss but higher current rating	Select when >25 A continuous current needed and board space allows discrete diode placement.
IXYS IXGN50N60B3	600 V/50 A, TO-247, 2.1 V V_CE(on), no integrated diode, 10 µs SC SOA	Higher current capability but larger gate charge (95 nC); needs stronger gate driver	Select for high-power solar inverters where parallel device count must be minimized despite higher drive complexity.

Compared with STGP30NC60WD and IXGN50N60B3, IRGB4620DPBF offers lower V_CE(on) and integrated diode-reducing component count and conduction loss-but trades off peak current rating and gate drive simplicity for compact TO-220 footprint in mid-power industrial systems.

Availability

IRGB4620DPBF is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, welding power supplies, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRGB4620DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and automotive ICs, with global manufacturing and R&D centers.

This part belongs to Infineon's "IGBT4" generation-designed specifically for industrial switching applications demanding high ruggedness, low losses, and integrated diode functionality in compact packages.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 22 Ω gate resistor is validated in the datasheet for 12 A operation at 15 V drive, yielding 31 ns turn-on delay and 24 ns fall time. Using >47 Ω increases switching losses by ≥35% and risks shoot-through in bridge configurations due to extended Miller plateau duration.

Does IRGB4620DPBF require a negative gate voltage for turn-off?

No-turn-off is fully achieved with 0 V gate drive. However, applying –5 V to –10 V improves noise immunity and reduces tail current during hard switching, especially in high-dV/dt environments like motor drives with long cable runs.

Can this IGBT be used in parallel configurations?

Yes-its positive V_CE(on) temperature coefficient ensures inherent current sharing. Successful parallel operation requires matched gate drive paths, identical PCB trace lengths, and mechanical symmetry on the heatsink to maintain uniform thermal coupling across devices.

What is the thermal interface requirement between case and heatsink?

Use a thermally conductive grease (0.1–0.2 mm thickness) or phase-change pad with ≤0.5 °C·in²/W interface resistance. Mounting torque must be 1.1 N·m (10 lbf·in) to ensure optimal R_θCS = 0.50 °C/W without damaging the TO-220AB package flange.

IRGB4620DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 32 A

Current - Collector Pulsed (Icm):: 36 A

Vce(on) (Max) @ Vge, Ic:: 1.85V @ 15V, 12A

Power - Max:: 140 W

Switching Energy:: 75µJ (on), 225µJ (off)

Input Type:: Standard

Gate Charge:: 25 nC

Td (on/off) @ 25°C:: 31ns/83ns

Test Condition:: 400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr):: 68 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AC

IRGB4620DPBF FAQ

1.How can I place an order for IRGB4620DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGB4620DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGB4620DPBF reliable?

The price and inventory of IRGB4620DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGB4620DPBF is usually 5 days.

3.What payment methods are accepted for IRGB4620DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGB4620DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGB4620DPBF?

IRGB4620DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGB4620DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGB4620DPBF?

For technical support, including IRGB4620DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGB4620DPBF requirements.

6.How does Aetrix verify that IRGB4620DPBF is sourced from the original manufacturer or authorized distributors?

All IRGB4620DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGB4620DPBF meets industry standards.

7.What is the process for return or replacement of IRGB4620DPBF?

All IRGB4620DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGB4620DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGB4620DPBF part is unused and in its original packaging.

Return procedure for IRGB4620DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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