Infineon Technologies IRGB4630DPBF

Overview

IRGB4630DPBF from Infineon Technologies is a 600 V, 30 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-220AB package. It delivers 1.65 V typical V_CE(on) at 18 A/15 V_GE, supports 5 µs short-circuit SOA, and operates up to 175°C junction temperature-designed for high-efficiency industrial motor drives and UPS inverters.

For engineers reviewing the IRGB4630DPBF datasheet, IRGB4630DPBF pinout, IRGB4630DPBF application, or IRGB4630DPBF equivalent, key selection criteria include its square RBSOA at 175°C, positive V_CE(on) temperature coefficient enabling stable parallel operation, and low 35 nC total gate charge for efficient 15–20 kHz switching in hard-switched topologies.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for balanced conduction and switching losses. Its integrated diode features soft reverse recovery (t_rr = 100 ns, Q_RR = 18 µC at 18 A, 175°C) and low E_rec = 260 µJ, minimizing voltage overshoot during commutation.

The device's RBSOA remains fully square up to 175°C with V_CC = 480 V and clamped inductive load capability of 72 A, while its 0.73 °C/W R_θJC (IGBT) and 2.0 °C/W R_θJC (diode) enable compact heatsink designs in space-constrained industrial inverters.

Key Specifications

Pinout & Package

IRGB4630DPBF uses the industry-standard TO-220AB package (3-pin, straight lead, non-isolated). Mounting screw torque is 10 lbf·in (1.1 N·m); case is electrically connected to collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGW40H65DFB and IXGN50N60B3, IRGB4630DPBF offers the optimal balance of integrated diode functionality, 5 µs short-circuit ruggedness, and proven thermal reliability in TO-220 form factor-making it preferred for cost-sensitive, space-constrained industrial inverters where board-level integration and protection simplicity are critical.

Availability

IRGB4630DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for IRGB4630DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to Infineon's "High Voltage IGBT" product line, engineered for rugged, high-efficiency switching in industrial AC drives, renewable energy inverters, and high-power SMPS.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 22 Ω gate resistor is validated in the datasheet for 18 A/400 V operation at 25°C and 175°C. Using >47 Ω increases switching time beyond safe RBSOA limits at high temperature; <10 Ω risks excessive dI/dt-induced voltage overshoot due to stray inductance in the gate loop.

Can IRGB4630DPBF be paralleled without emitter resistors?

Yes-its positive V_CE(on) temperature coefficient (−18 mV/°C) ensures automatic current balancing across devices as junction temperature rises. Parallel operation requires matched gate drive layout, identical heatsinking, and ≤5% V_GE(th) variation between units per datasheet spec.

Does the integrated diode support reverse recovery in bidirectional topologies?

The ultrafast soft-recovery diode is rated for 18 A continuous forward current at 100°C and exhibits 100 ns t_rr with low I_RR (23 A) and E_rec (260 µJ) at 175°C-making it suitable for freewheeling in single-phase PFC and inverter half-bridges, but not for active rectification.

What thermal interface material is recommended for TO-220AB mounting?

Use a 0.1 mm thick, thermally conductive silicone grease (e.g., Dow Corning TC-5023, κ ≈ 3.0 W/m·K) applied uniformly to the metal tab. Avoid thermal pads thicker than 0.2 mm, as R_θCS specification assumes 0.5 °C/W with greased flat surface-exceeding this degrades R_θJC performance.