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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGB4640DPBF

Name: IRGB4640DPBF
Brand: Infineon Technologies
SKU: IRGB4640DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGB4640DPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRGB4640DPBF.pdf

Description:: DIODE 600V 40A TO-220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGB4640DPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 65 A insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-220AB package. It delivers 1.60 V typical V_CE(on) at 24 A and 15 V gate drive, supports 5 µs short-circuit SOA, and operates up to 175 °C junction temperature for industrial motor drives and UPS inverters.

For engineers reviewing the IRGB4640DPBF datasheet, IRGB4640DPBF pinout, IRGB4640DPBF application, or IRGB4640DPBF equivalent, key selection criteria include its square RBSOA at 175 °C, positive V_CE(on) temperature coefficient for parallel operation, and clamped inductive load current rating of 96 A.

Technical Context

This IGBT uses a trench-gate field-stop structure enabling low conduction loss and robust switching performance. Its integrated diode features soft reverse recovery (t_rr = 89 ns, Q_RR = 1000 nC typ.) and low forward voltage (V_FM = 1.8 V at 24 A, 25 °C), minimizing commutation losses in hard-switched topologies.

The device implements a 5 µs short-circuit safe operating area with V_GE = +15 V to 0 V gate transition, validated under V_CC = 400 V and T_J = 175 °C. Thermal resistance R_θJC is 0.60 °C/W (IGBT) and 1.53 °C/W (diode), enabling high-power density designs when mounted on greased heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 480 V in 3-phase inverter applications with 20% margin.
I_C @ T_C = 100 °C	40 A - Sustains continuous motor drive current at elevated ambient temperatures without derating.
V_CE(on) typ.	1.60 V @ 24 A - Reduces conduction loss to ~38 W per device at rated current, improving system efficiency.
E_off typ.	700 µJ @ 24 A - Enables 16 kHz switching in UPS inverters while maintaining thermal stability.
R_θJC (IGBT)	0.60 °C/W - Allows 250 W power dissipation with ≤150 °C case-to-junction rise, supporting compact heatsink design.
t_SC SOA	5 µs - Supports hardware-based short-circuit protection using fixed-time blanking without external sensing.
Q_g	50 nC - Matches standard 15 V gate drivers with <1.5 W average gate power at 20 kHz switching.

Pinout & Package

IRGB4640DPBF uses the TO-220AB package: isolated mounting flange, 3-pin through-hole configuration, 1.1 N·m maximum mounting torque, and 300 °C soldering tolerance at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC bus positive in half-bridge leg; carries full load current and fault current up to 96 A.
Gate (G)	Control input	Receives 15 V logic-level drive; requires 50 nC total charge for full turn-on; ±20 V absolute max rating.
Emitter (E)	Power return and reference node	Serves as common source for IGBT and diode; must be low-inductance path to minimize switching overshoot.

Key Features

Feature	Design Value
Square RBSOA at 175 °C	Enables reliable hard switching at full voltage and current without dynamic derating in motor control waveforms.
Positive V_CE(on) tempco	Ensures natural current sharing in paralleled configurations without external ballasting resistors.
Ultrafast soft-recovery diode	Reduces E_rec to 621 µJ and limits di/dt-induced voltage spikes during freewheeling in inductive loads.
5 µs short-circuit withstand	Permits use of simple fixed-delay desaturation protection circuits instead of complex analog sensing.
Lead-free & RoHS compliant	Meets EU Directive 2011/65/EU for industrial equipment sold in regulated markets.

Applications

Industrial Motor Drive

Inverters

Use Scenario: 3-phase variable-frequency drive for HVAC compressors operating at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch in 6-pack module configuration controlling phase current waveform shape and magnitude.

Use Value: 1.60 V V_CE(on) reduces conduction loss by 18% vs. legacy 2.1 V devices, lowering heatsink requirements by one size tier.

Use Scenario: 10 kVA solar string inverter with unidirectional DC–AC conversion and transformerless topology.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge output stage handling bidirectional reactive power flow.

Use Value: Soft-recovery diode minimizes reverse recovery noise, eliminating need for snubbers and reducing EMI filter cost by 30%.

UPS Systems

Welding Equipment

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid failure with 10 ms transfer time.

IC Role / Device Role / Timing Role: Inverter-stage power switch managing battery-to-AC conversion under dynamic load steps up to 200%.

Use Value: 5 µs SC SOA enables deterministic fault shutdown before thermal runaway, meeting UL 1778 safety compliance.

Use Scenario: IGBT-based inverter welder with 300 A output current and 20 kHz arc stabilization frequency.

IC Role / Device Role / Timing Role: Primary switching device in resonant LLC converter feeding DC welding output stage.

Use Value: 175 °C max junction temperature allows sustained 100% duty cycle operation during continuous arc mode without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H60DLF	600 V / 40 A; lower current rating; 1.85 V V_CE(on); TO-247 package	Limited to ≤15 kW systems; requires larger gate driver due to higher Q_g (75 nC)	Select when footprint flexibility allows TO-247 and system power is capped at 12 kW.
IXYS IXGN50N60B3	600 V / 50 A; 1.75 V V_CE(on); 3.5 µs SC SOA; non-integrated diode	Requires external anti-parallel diode; less suitable for space-constrained UPS designs	Prefer where discrete diode selection enables optimized recovery tuning for specific load inductance.

Compared with STGW40H60DLF and IXGN50N60B3, IRGB4640DPBF offers higher current density in TO-220AB, superior short-circuit ruggedness, and integrated diode co-location-reducing layout parasitics critical in high-di/dt welding inverters.

Availability

IRGB4640DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for IRGB4640DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy sectors.

This device belongs to Infineon's PrimePACK™-compatible IGBT portfolio designed for high-efficiency, high-reliability medium-power switching in harsh thermal environments.

FAQ

What is the maximum gate-emitter voltage rating for IRGB4640DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient capability up to ±30 V for ≤100 ns. Exceeding ±20 V continuously risks oxide degradation and threshold voltage shift; gate driver designs must include clamping or Zener protection at 18 V to ensure long-term reliability.

Does IRGB4640DPBF require a negative gate voltage for turn-off?

No, it operates reliably with 0 V gate turn-off; however, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-dV/dt environments like motor drives. The device's V_GE(th) range (4.0–6.5 V) ensures clean turn-on even with 15 V drive and tolerates moderate undershoot.

Can IRGB4640DPBF be paralleled for higher current capacity?

Yes-its positive V_CE(on) temperature coefficient enables stable current sharing without external emitter resistors. Successful paralleling requires matched gate drive loop inductance (<10 nH), identical PCB trace lengths, and mechanical symmetry to maintain uniform thermal coupling across devices.

What thermal interface material is recommended for TO-220AB mounting?

A silicone-based thermal grease with 0.5–1.0 W/m·K conductivity and 0.05–0.1 mm bond line thickness is recommended. Avoid epoxy-based pastes that cure rigidly; use only flat, greased surfaces with 1.1 N·m torque to achieve the specified 0.60 °C/W R_θJC, as uneven pressure increases thermal resistance by up to 40%.

IRGB4640DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 65 A

Current - Collector Pulsed (Icm):: 72 A

Vce(on) (Max) @ Vge, Ic:: 1.9V @ 15V, 24A

Power - Max:: 250 W

Switching Energy:: 115µJ (on), 600µJ (off)

Input Type:: Standard

Gate Charge:: 75 nC

Td (on/off) @ 25°C:: 41ns/104ns

Test Condition:: 400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr):: 89 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AC

IRGB4640DPBF FAQ

1.How can I place an order for IRGB4640DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGB4640DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGB4640DPBF reliable?

The price and inventory of IRGB4640DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGB4640DPBF is usually 5 days.

3.What payment methods are accepted for IRGB4640DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGB4640DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGB4640DPBF?

IRGB4640DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGB4640DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGB4640DPBF?

For technical support, including IRGB4640DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGB4640DPBF requirements.

6.How does Aetrix verify that IRGB4640DPBF is sourced from the original manufacturer or authorized distributors?

All IRGB4640DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGB4640DPBF meets industry standards.

7.What is the process for return or replacement of IRGB4640DPBF?

All IRGB4640DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGB4640DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGB4640DPBF part is unused and in its original packaging.

Return procedure for IRGB4640DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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