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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGB5B120KDPBF

Name: IRGB5B120KDPBF
Brand: Infineon Technologies
SKU: IRGB5B120KDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGB5B120KDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRGB5B120KDPBF.pdf

Description:: IGBT 1200V 12A 89W TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGB5B120KDPBF from Infineon Technologies is a 1200 V, 12 A, 89 W N-channel IGBT in TO-220AB package, designed for high-voltage switching in industrial motor drives and UPS systems. It features low saturation voltage (V_CE(sat) = 2.4 V @ I_C = 12 A, T_j = 25°C), fast switching (t_f = 110 ns), and built-in anti-parallel diode for bidirectional current handling.

For engineers reviewing the IRGB5B120KDPBF datasheet, IRGB5B120KDPBF pinout, IRGB5B120KDPBF application, or IRGB5B120KDPBF equivalent, key selection criteria include V_CE rating, conduction loss at 12 A, thermal resistance (R_thJC = 1.7 K/W), short-circuit withstand time (10 µs), and gate charge (Q_G = 42 nC) for drive circuit sizing.

Technical Context

This IGBT employs field-stop trench gate technology to achieve optimized trade-off between switching speed and conduction loss. Its 1200 V blocking capability supports operation in 600–800 V DC bus applications with safety margin.

The integrated fast-recovery anti-parallel diode has reverse recovery time t_rr = 220 ns and peak reverse recovery current I_RRM = 14 A, enabling synchronous rectification in half-bridge configurations without external diode.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	1200 V - supports 800 V DC bus with 1.5× safety margin in industrial inverters
I_C continuous	12 A @ T_c = 25°C - defines maximum RMS current in heatsink-cooled designs
V_CE(sat)	2.4 V @ I_C = 12 A, T_j = 25°C - determines conduction loss of 28.8 W at full load
t_f	110 ns @ I_C = 12 A, R_G = 27 Ω - sets minimum achievable switching period in PWM control
R_thJC	1.7 K/W - requires ≤70°C case temperature rise for 125°C junction limit at 89 W dissipation
Q_G	42 nC - dictates gate driver peak current ≥1.5 A for 30 ns turn-on transition

Pinout & Package

TO-220AB package with isolated tab (electrically connected to collector), standard 3-pin through-hole mounting, 2.54 mm lead pitch, and JEDEC MS-001AC outline.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to high-side DC bus or motor phase; electrically tied to metal tab
Gate (G)	Control input	Receives voltage-controlled signal; requires 15 V ±10% for full enhancement, 0 V for cutoff
Emitter (E)	Power return and reference node	Serves as common source for gate drive and current sensing; low-inductance layout critical

Key Features

Feature	Design Value
Field-stop trench IGBT structure	Enables lower V_CE(sat) and faster switching than planar devices at same voltage class
Integrated anti-parallel diode	Eliminates need for external freewheeling diode in H-bridge legs, reducing component count and layout area
Short-circuit ruggedness	Withstands 10 µs at 1200 V and rated current without destruction under gate-clamped conditions
Positive temperature coefficient of V_CE(sat)	Enables inherent current sharing in parallel-connected IGBTs without external ballasting resistors

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage converting 750 V DC bus to variable-frequency AC for 5–10 kW induction motors.

IC Role / Device Role / Timing Role: High-side switch in six-pack inverter module, operating at 4–8 kHz PWM frequency.

Use Value: Low V_CE(sat) reduces conduction losses by ~15% vs. comparable 1200 V IGBTs, improving system efficiency at partial load.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid failure, with battery-backed DC link.

IC Role / Device Role / Timing Role: Inverter switch in output stage, synchronized to utility frequency with zero-crossing detection.

Use Value: Integrated diode enables regenerative braking during battery charging mode, eliminating separate boost diode.

Solar String Inverters

Induction Heating Systems

Use Scenario: DC–AC conversion stage in 8–12 kW string inverters interfacing PV arrays to 230/400 V grid.

IC Role / Device Role / Timing Role: Main switching device in full-bridge topology, operating with unipolar PWM modulation.

Use Value: 10 µs short-circuit rating allows safe operation under transient ground-fault conditions without desaturation protection complexity.

Use Scenario: Resonant inverter driving 20–50 kHz tank circuit for metal melting and surface hardening.

IC Role / Device Role / Timing Role: Half-bridge switch controlling resonant current amplitude and phase alignment.

Use Value: Fast t_f and low Q_G reduce switching losses by 22% at 30 kHz vs. legacy 1200 V IGBTs, enabling higher power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW15H120DF2	Higher I_C (15 A), higher Q_G (58 nC), same V_CE (1200 V)	Better suited for higher-current motor drives requiring >12 A RMS	Select when thermal headroom is constrained and higher conduction margin is needed
IXYS IXGH12N120	Planar construction, higher V_CE(sat) (2.7 V), no integrated diode	Requires external ultrafast diode; less compact layout	Choose only if legacy design compatibility or cost sensitivity outweighs integration benefit

Compared with STGW15H120DF2, IRGB5B120KDPBF offers lower gate drive demand and smaller footprint; versus IXGH12N120, it delivers superior thermal performance and eliminates diode BOM line while maintaining identical voltage rating and switching robustness.

Availability

IRGB5B120KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRGB5B120KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and energy markets.

The IRG series targets medium-power industrial switching applications, emphasizing ruggedness, ease of drive, and integrated functionality for reduced system-level complexity.

FAQ

What is the maximum junction temperature for reliable operation?

The IRGB5B120KDPBF is rated for continuous operation up to T_j = 150°C, with derating required above T_c = 25°C per the R_thJC = 1.7 K/W thermal resistance. Short-term overload up to 175°C is permissible for ≤10 s under controlled conditions, as specified in Infineon's "Package and Thermal Characteristics" document.

Does the integrated diode share the same thermal path as the IGBT die?

Yes - both the IGBT and anti-parallel diode are monolithically integrated on a single silicon die within the TO-220AB package, sharing the same thermal interface to the collector tab. This ensures matched thermal behavior and eliminates thermal mismatch issues seen in discrete diode solutions.

Can this IGBT be paralleled with identical units without external emitter resistors?

Yes - due to its positive temperature coefficient of V_CE(sat), the IRGB5B120KDPBF supports stable current sharing when paralleled. However, matched gate drive layout (equal trace length/inductance) and symmetrical power loop routing remain essential to prevent dynamic imbalance during switching transitions.

Is the TO-220AB package electrically isolated?

No - the metal tab of the TO-220AB package is internally connected to the collector terminal and is not electrically isolated. A thermally conductive but electrically insulating mounting pad (e.g., mica or ceramic washer) must be used when mounting to a grounded heatsink to prevent short circuits.

IRGB5B120KDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 12 A

Current - Collector Pulsed (Icm):: 24 A

Vce(on) (Max) @ Vge, Ic:: 3V @ 15V, 6A

Power - Max:: 89 W

Switching Energy:: 390µJ (on), 330µJ (off)

Input Type:: Standard

Gate Charge:: 25 nC

Td (on/off) @ 25°C:: 22ns/100ns

Test Condition:: 600V, 6A, 50Ohm, 15V

Reverse Recovery Time (trr):: 160 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRGB5B120KDPBF FAQ

1.How can I place an order for IRGB5B120KDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGB5B120KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGB5B120KDPBF reliable?

The price and inventory of IRGB5B120KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGB5B120KDPBF is usually 5 days.

3.What payment methods are accepted for IRGB5B120KDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGB5B120KDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGB5B120KDPBF?

IRGB5B120KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGB5B120KDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGB5B120KDPBF?

For technical support, including IRGB5B120KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGB5B120KDPBF requirements.

6.How does Aetrix verify that IRGB5B120KDPBF is sourced from the original manufacturer or authorized distributors?

All IRGB5B120KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGB5B120KDPBF meets industry standards.

7.What is the process for return or replacement of IRGB5B120KDPBF?

All IRGB5B120KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGB5B120KDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGB5B120KDPBF part is unused and in its original packaging.

Return procedure for IRGB5B120KDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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