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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGB6B60KDPBF

Name: IRGB6B60KDPBF
Brand: Infineon Technologies
SKU: IRGB6B60KDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGB6B60KDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRGB6B60KDPBF.pdf

Description:: IGBT 600V 13A 90W TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,995

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Product details

Overview

IRGB6B60KDPBF from Infineon Technologies is a 600 V, 10 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-262 package. It delivers 1.8 V typical V_CE(on), 10 μs short-circuit capability, and 70 ns diode reverse recovery time (t_rr) for motor control inverters operating at 15–20 kHz.

For engineers reviewing the IRGB6B60KDPBF datasheet, IRGB6B60KDPBF pinout, IRGB6B60KDPBF application, or IRGB6B60KDPBF equivalent, key selection criteria include RBSOA robustness, clamped inductive load rating (26 A), low EMI due to ultrasoft diode recovery, and thermal resistance R_θJC = 1.4 °C/W for IGBT section.

Technical Context

This IGBT employs non-punch-through (NPT) technology with positive V_CE(on) temperature coefficient-enabling stable parallel operation-and features a monolithically integrated diode with 90–175 μJ reverse recovery energy (E_rec) and <14 A peak reverse recovery current (I_rr) at 150°C.

Its square reverse bias safe operating area (RBSOA) supports 600 V DC bus applications with inductive switching, while 10 μs short-circuit withstand time at T_J = 150°C enables reliable overcurrent protection in variable-frequency drives without external desaturation detection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Supports 400 V AC input rectified bus with 50% voltage margin for surge immunity.
I_C @ T_C = 100°C	10 A - Continuous output current capability in thermally constrained heatsink designs.
V_CE(on) typ.	1.8 V @ I_C = 5 A, V_GE = 15 V - Enables <10 W conduction loss at 5 A, reducing heatsink size.
t_rr	70–80 ns - Ultrafast soft recovery minimizes voltage overshoot and EMI in hard-switched inverters.
E_off	135–245 μJ @ T_J = 25°C - Low turn-off loss supports 15–20 kHz PWM frequency without excessive snubber loss.
R_θJC (IGBT)	1.4 °C/W - Enables direct mounting to heatsink with predictable junction-to-case thermal path.
Short Circuit Withstand	10 μs @ T_J = 150°C - Allows time for controller-based fault shutdown in motor phase-leg protection.

Pinout & Package

IRGB6B60KDPBF uses a TO-262 (Straight Lead) package with 3 terminals: Collector (tab), Gate, and Emitter. The metal tab is electrically connected to the collector and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main high-side power terminal	Electrically tied to heatsink; requires insulating pad if heatsink is grounded; carries full load current.
Gate	Control input	High-impedance MOS-controlled terminal; requires 15 V drive for full saturation; ±20 V absolute max rating.
Emitter	Power return and reference node	Common return for IGBT and diode; must be low-inductance connection to minimize switching oscillation.

Key Features

Feature	Design Value
Ultrasoft diode recovery	trr = 70–80 ns, Irr = 10–14 A, Erec = 90–175 μJ - Reduces voltage spikes and EMI in hard-switched motor drives.
Square RBSOA	Rated for 600 V × 10 A DC with no second breakdown limit - Enables reliable operation under inductive turn-off stress.
10 μs short-circuit capability	Validated at T_J = 150°C - Provides deterministic fault window for microcontroller-based protection logic.
Positive V_CE(on) tempco	Increases with junction temperature - Enables natural current sharing in paralleled devices without external ballasting.
Low V_F diode	1.25–1.45 V @ I_F = 5 A - Reduces freewheeling conduction loss compared to standard FRD alternatives.

Applications

Industrial Motor Inverter

UPS Output Stage

Use Scenario: 3-phase 0.75–2.2 kW inverter driving induction motors in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switch in 6-pack bridge configuration; switched at 16 kHz with sinusoidal PWM.

Use Value: Ultrasoft diode limits dv/dt-induced shoot-through risk during commutation; 1.4 °C/W R_θJC allows compact heatsink design.

Use Scenario: Double-conversion online UPS delivering clean 230 VAC output with <5% THD.

IC Role / Device Role / Timing Role: Inverter-stage switching device in full-bridge topology; handles 100% resistive + inductive load transients.

Use Value: Square RBSOA ensures reliability during line-sag recovery; 10 μs short-circuit rating supports fast OCP response.

Solar Microinverter DC-AC Stage

Electric Power Steering (EPS) Inverter

Use Scenario: Single-phase transformerless microinverter converting 30–60 VDC PV string output to 230 VAC grid.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating in unipolar modulation at 20 kHz.

Use Value: Low E_off (135–245 μJ) enables high efficiency at light loads; integrated diode eliminates discrete FRD BOM cost.

Use Scenario: 12 V automotive EPS system delivering 50–100 N·m assist torque via 3-phase BLDC motor.

IC Role / Device Role / Timing Role: Phase-leg switch in 60–100 kHz SVPWM-driven inverter with regenerative braking.

Use Value: 150°C-rated operation ensures reliability under hood ambient; low V_F diode reduces heat during freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch with integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH60UD	600 V, 12 A, TO-247; higher Q_g (35 nC vs. 18.2 nC); slower t_r/t_f; no integrated diode	Requires external ultrafast diode; better for lower-frequency (<10 kHz), higher-current designs	Choose when higher continuous current rating is needed and external diode layout is acceptable.
STGP10NC60KD	600 V, 10 A, TO-220; similar V_CE(on) (1.8 V); 100 ns t_rr; R_θJC = 2.0 °C/W (worse thermal performance)	Lower power density; limited to <8 A continuous at 100°C case; less robust RBSOA	Choose only for cost-sensitive, low-power, non-parallel applications where thermal margin is ample.

Compared with IRG4PH60UD and STGP10NC60KD, IRGB6B60KDPBF offers superior thermal efficiency (1.4 vs. ≥2.0 °C/W), integrated diode convenience, and faster soft recovery-making it optimal for compact, high-frequency motor drives requiring low EMI and parallel scalability.

Availability

IRGB6B60KDPBF is available at Aetrix Electronics and suitable for industrial motor inverters, UPS systems, solar microinverters, and electric power steering modules requiring stable component supply across multi-year production cycles.

Supply support for IRGB6B60KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's "600 V High-Speed IGBT" product line, engineered specifically for high-efficiency, low-EMI motor control and power conversion systems operating above 10 kHz.

FAQ

What is the maximum gate resistor value recommended for reliable switching?

For 15 V gate drive and 5 A collector current, a 100 Ω gate resistor is specified in the datasheet for switching characterization. Using >150 Ω increases turn-on/turn-off times beyond 300 ns, risking increased E_tot and thermal stress; values below 47 Ω may cause gate ringing without proper PCB layout.

Can IRGB6B60KDPBF be used in parallel configurations?

Yes-its positive V_CE(on) temperature coefficient and square RBSOA enable stable current sharing. Design requires matched gate drive impedance, symmetrical layout, and shared heatsink with uniform thermal coupling; derating to ≤8 A per device is recommended for 150°C operation.

Is the integrated diode rated for continuous freewheeling current?

Yes-the diode supports 10 A continuous forward current at T_C = 100°C (same as IGBT), with V_F = 1.25–1.45 V at 5 A. Its ultrasoft recovery prevents destructive reverse recovery current spikes during forced commutation in inverter legs.

What is the minimum gate voltage required to achieve full saturation?

A minimum V_GE of 15 V is required to ensure V_CE(on) ≤ 2.2 V at I_C = 5 A and T_J = 25°C. At 150°C junction temperature, V_GE(th) drops to ~3.5 V, but 15 V drive maintains sufficient overdrive margin to prevent linear-mode operation under thermal stress.

IRGB6B60KDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 13 A

Current - Collector Pulsed (Icm):: 26 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 5A

Power - Max:: 90 W

Switching Energy:: 110µJ (on), 135µJ (off)

Input Type:: Standard

Gate Charge:: 18.2 nC

Td (on/off) @ 25°C:: 25ns/215ns

Test Condition:: 400V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr):: 70 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRGB6B60KDPBF FAQ

1.How can I place an order for IRGB6B60KDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGB6B60KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGB6B60KDPBF reliable?

The price and inventory of IRGB6B60KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGB6B60KDPBF is usually 5 days.

3.What payment methods are accepted for IRGB6B60KDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGB6B60KDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGB6B60KDPBF?

IRGB6B60KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGB6B60KDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGB6B60KDPBF?

For technical support, including IRGB6B60KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGB6B60KDPBF requirements.

6.How does Aetrix verify that IRGB6B60KDPBF is sourced from the original manufacturer or authorized distributors?

All IRGB6B60KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGB6B60KDPBF meets industry standards.

7.What is the process for return or replacement of IRGB6B60KDPBF?

All IRGB6B60KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGB6B60KDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGB6B60KDPBF part is unused and in its original packaging.

Return procedure for IRGB6B60KDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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