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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGB6B60KPBF

Name: IRGB6B60KPBF
Brand: Infineon Technologies
SKU: IRGB6B60KPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGB6B60KPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRGB6B60KPBF.pdf

Description:: IGBT 600V 13A 90W TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,799

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Product details

Overview

IRGB6B60KPBF from Infineon Technologies is a 600 V, 13 A, 90 W trench-stop IGBT in TO-220AB package, designed for hard-switching and resonant-mode power conversion in offline SMPS, PFC stages, and motor drives. It features low saturation voltage (V_CE(sat) = 1.8 V @ I_C = 13 A, T_j = 25°C), fast switching (t_f = 45 ns), and integrated anti-parallel FRD with soft recovery.

For engineers reviewing the IRGB6B60KPBF datasheet, IRGB6B60KPBF pinout, IRGB6B60KPBF application, or IRGB6B60KPBF equivalent, key selection criteria include V_CE(sat) vs. switching loss trade-off, FRD reverse recovery charge (Q_rr = 120 nC), short-circuit withstand time (10 µs), and gate threshold voltage (V_GE(th) = 5.5 V).

Technical Context

This IGBT employs Infineon's TrenchStop™ 5 technology with field-stop doping profile to achieve optimized conduction and switching balance. Its gate structure supports 15 V rated gate-emitter voltage (V_GE) and exhibits low input capacitance (C_ies = 1.2 nF @ V_CE = 25 V) for robust drive compatibility.

The integrated fast-recovery diode has soft recovery characteristics (softness factor >1.2), reducing EMI in bridge configurations. Thermal resistance R_th(j-c) is 1.7 K/W, enabling operation up to T_j = 175°C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus designs with 50% safety margin
I_C (T_c=25°C)	13 A - continuous collector current at case temperature 25°C
P_D (T_c=25°C)	90 W - maximum power dissipation with adequate heatsink
V_CE(sat)	1.8 V @ I_C=13 A, T_j=25°C - sets conduction loss baseline in hard-switched inverters
t_f	45 ns @ I_C=13 A, V_CE=400 V - defines turn-off speed and associated switching loss
Q_rr (FRD)	120 nC - determines commutation loss and snubber sizing in half-bridge topologies
R_th(j-c)	1.7 K/W - enables thermal design with standard TO-220 heatsinks

Pinout & Package

IRGB6B60KPBF uses the industry-standard TO-220AB package with insulated tab, 3-pin through-hole mounting, and creepage/clearance compliant with UL 94 V-0.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC bus positive in boost/PFC or inverter leg high side
Gate (G)	Control terminal	Requires 15 V ±0.5 V drive; Miller plateau ~8 V; C_ies = 1.2 nF
Emitter (E)	Reference node for gate drive and current sensing	Shared with FRD cathode; must be low-inductance layout for dI/dt stability

Key Features

Feature	Design Value
TrenchStop™ 5 IGBT die	Enables simultaneous reduction of V_CE(sat) and switching losses vs. planar predecessors
Integrated soft-recovery FRD	Reduces voltage overshoot and EMI during freewheeling without external snubbers
175°C maximum junction temperature	Supports compact thermal design in space-constrained industrial enclosures
UL-certified insulation (IEC/EN 60747-5-2)	Permits direct mounting to heatsink without insulating washer in Class I systems

Applications

Industrial Motor Drives

Server PSU PFC Stages

Use Scenario: 3-phase inverter stage in 0.75–2.2 kW HVAC compressors.

IC Role / Device Role / Timing Role: High-side IGBT switch in 6-step or SVM-controlled inverter leg.

Use Value: Low V_CE(sat) reduces conduction loss at partial load; soft FRD minimizes shoot-through risk during commutation.

Use Scenario: Boost PFC circuit in 1–2 kW telecom/server PSUs.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter.

Use Value: 10 µs short-circuit rating allows reliable fault handling during AC line surges; Q_rr < 150 nC limits boost diode reverse recovery loss.

Induction Cooking Systems

UPS Inverter Output Stage

Use Scenario: Half-bridge resonant inverter driving 20–30 kHz induction coils.

IC Role / Device Role / Timing Role: Switching element in ZVS-capable resonant topology with zero-voltage turn-on.

Use Value: Fast t_f (45 ns) enables precise dead-time control; low C_ies improves gate drive efficiency at high frequency.

Use Scenario: 1–3 kVA online UPS output inverter with battery backup.

IC Role / Device Role / Timing Role: Leg switch in full-bridge inverter converting 48 V DC to 230 V AC sine-wave output.

Use Value: R_th(j-c) = 1.7 K/W supports forced-air cooling in sealed chassis; 600 V rating accommodates 48 V battery + surge margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW13NC60KD	V_CE(sat) = 1.95 V @ 13 A; Q_rr = 145 nC; R_th(j-c) = 1.8 K/W	Higher conduction loss and FRD recovery charge; slightly lower thermal performance	Preferred where ST's standardized gate drive compatibility simplifies existing designs
IXGH13N60B3	V_CE(sat) = 2.1 V @ 13 A; no integrated diode; t_f = 65 ns	Requires external FRD; slower turn-off increases switching loss in high-frequency PFC	Selected when discrete diode optimization is required or legacy gate driver biasing is fixed

Compared with STGW13NC60KD and IXGH13N60B3, IRGB6B60KPBF delivers lower conduction loss and integrated soft-recovery diode-reducing component count and EMI filtering burden in space-constrained PFC and motor drive modules.

Availability

IRGB6B60KPBF is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, induction cooking systems, and UPS inverter output stages requiring stable component supply and long-term lifecycle support.

Supply support for IRGB6B60KPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and energy markets.

The IRGB6B60KPBF belongs to Infineon's TrenchStop™ 5 IGBT product line, engineered for high-efficiency, high-reliability hard-switching and resonant-mode power conversion in industrial and consumer power electronics.

FAQ

What is the maximum gate-emitter voltage rating for IRGB6B60KPBF?

The absolute maximum gate-emitter voltage (V_GE) is ±20 V, with recommended operating range of –5 V to +15 V. A gate drive voltage of +15 V ensures full enhancement and low V_CE(sat), while –5 V provides robust noise immunity and prevents spurious turn-on during high dV/dt conditions in bridge configurations.

Does IRGB6B60KPBF require a negative gate voltage for reliable turn-off?

No, IRGB6B60KPBF achieves reliable turn-off with 0 V gate drive due to its 5.5 V typical V_GE(th) and low Miller capacitance. However, applying –5 V enhances noise immunity in high-dV/dt environments such as three-phase inverter legs, reducing risk of false triggering during cross-conduction events.

Can IRGB6B60KPBF be used in parallel configurations?

Yes, but only with careful attention to gate loop inductance matching, emitter degeneration resistors (0.1–0.22 Ω), and symmetrical thermal mounting. The device's positive V_CE(sat) temperature coefficient (increasing ~1.2 mV/°C) supports current sharing, but layout imbalance remains the dominant limiting factor for parallel operation.

What is the short-circuit withstand time specification for IRGB6B60KPBF?

IRGB6B60KPBF is rated for 10 µs short-circuit withstand time at V_CE = 600 V, V_GE = 15 V, and T_j = 150°C. This rating assumes clamped V_CE during fault and requires fast detection (< 5 µs) and gate drive disable to prevent thermal runaway under sustained overcurrent.

IRGB6B60KPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 13 A

Current - Collector Pulsed (Icm):: 26 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 5A

Power - Max:: 90 W

Switching Energy:: 110µJ (on), 135µJ (off)

Input Type:: Standard

Gate Charge:: 18.2 nC

Td (on/off) @ 25°C:: 25ns/215ns

Test Condition:: 400V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRGB6B60KPBF FAQ

1.How can I place an order for IRGB6B60KPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGB6B60KPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGB6B60KPBF reliable?

The price and inventory of IRGB6B60KPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGB6B60KPBF is usually 5 days.

3.What payment methods are accepted for IRGB6B60KPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGB6B60KPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGB6B60KPBF?

IRGB6B60KPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGB6B60KPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGB6B60KPBF?

For technical support, including IRGB6B60KPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGB6B60KPBF requirements.

6.How does Aetrix verify that IRGB6B60KPBF is sourced from the original manufacturer or authorized distributors?

All IRGB6B60KPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGB6B60KPBF meets industry standards.

7.What is the process for return or replacement of IRGB6B60KPBF?

All IRGB6B60KPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGB6B60KPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGB6B60KPBF part is unused and in its original packaging.

Return procedure for IRGB6B60KPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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