Infineon Technologies IRGBC20UD2
- Part No.:
- IRGBC20UD2
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-220-3
- Datasheet:
-
IRGBC20UD2.pdf
- Description:
- IGBT W/DIODE 600V 13A TO-220AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,355
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Product details
Overview
IRGBC20UD2 from Infineon Technologies is a co-packaged insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-220AB package, rated for 600 V VCES, 13 A continuous collector current at 25°C, and 3.0 V VCE(sat) at 6.5 A/15 VGE. It delivers 0.43–0.65 mJ total switching loss at 25°C and supports >5 kHz operation in motor control inverters and UPS systems.
For engineers reviewing the IRGBC20UD2 datasheet, IRGBC20UD2 pinout, IRGBC20UD2 application, or IRGBC20UD2 equivalent, key selection criteria include its HEXFRED™ diode's 37–55 ns trr, 6.0 pF Cres, 16–22 nC Qg, and thermal resistance of 2.1 °C/W (IGBT) and 3.5 °C/W (diode), critical for high-frequency hard-switching designs.
Technical Context
The IRGBC20UD2 integrates an N-channel IGBT and a soft-recovery diode in a single TO-220AB package, sharing common thermal and electrical paths. Its gate threshold voltage (3.0–5.5 V) and negative temperature coefficient (−11 mV/°C) enable stable turn-on across −55 to +150°C junction range.
Switching behavior is defined by 60 ns td(on), 29 ns tr, 130–200 ns td(off), and 65–120 ns tf at 25°C, with tail-current-inclusive Eon/Eoff losses measured under 480 V VCC, 6.5 A IC, and 50 Ω gate resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - maximum blocking voltage before avalanche, enabling use in 400 V DC bus applications with safety margin |
| IC @ TC = 25°C | 13 A - continuous current capability with heatsink, defining base conduction rating at room case temperature |
| VCE(sat) | ≤3.0 V @ 6.5 A/15 VGE - low saturation voltage reduces conduction loss and thermal stress in PWM inverters |
| Ets | 0.43–0.65 mJ @ 25°C - total switching energy per cycle, including IGBT tail and diode reverse recovery components |
| trr | 37–55 ns @ 25°C - fast, soft diode recovery minimizes voltage overshoot and EMI in clamped-inductive switching |
| RθJC (IGBT) | 2.1 °C/W - junction-to-case thermal resistance enables direct mounting to heatsink without isolation pad penalty |
| Cres | 6.0 pF - low reverse transfer capacitance improves gate drive efficiency and dv/dt immunity |
Pinout & Package
IRGBC20UD2 uses JEDEC TO-220AB package with isolated tab (collector connected to tab), three leads, and screw-mount mechanical interface. Thermal path optimized for flat, greased heatsink contact (RθCS = 0.50 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (Tab) | Main power output terminal / heat sink interface | Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink |
| Emitter | Power return path / reference node for gate drive | Serves as common source for IGBT and cathode for integrated diode; defines local ground reference |
| Gate | Control input for IGBT channel modulation | High-impedance MOS-controlled terminal; requires 15 V drive for full saturation and <5.5 V for safe turn-off |
Key Features
| Feature | Design Value |
|---|---|
| Co-packaged HEXFRED™ diode | Integrated soft-recovery diode eliminates discrete placement, reduces layout parasitics, and ensures matched thermal tracking |
| Switching-loss rating includes tail losses | Published Eon/Eoff values account for full IGBT tail current and diode reverse recovery energy-no derating needed |
| Optimized for >5 kHz operation | Low Qg (16–22 nC) and fast tr/tf support high-frequency PWM without excessive gate drive power |
| Ultra-low RθJC (2.1 °C/W) | Enables higher power density in space-constrained motor drives by reducing required heatsink size |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies |
|---|---|
Use Scenario: Three-phase inverter stage in 0.75–2.2 kW AC servo drives operating at 8–16 kHz PWM frequency. IC Role / Device Role / Timing Role: Main switching device in leg topology; handles bidirectional current during regeneration via integrated diode. Use Value: Soft diode recovery limits voltage spikes during regenerative braking, reducing snubber component count and improving system reliability. | Use Scenario: DC-AC inverter stage in line-interactive UPS delivering 1 kVA output with battery backup. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration; conducts load current and recovers energy during dead-time commutation. Use Value: Matched IGBT/diode thermal characteristics prevent thermal runaway during overload transients and ensure consistent SOA performance. |
| Induction Heating Systems | Welding Power Supplies |
Use Scenario: Resonant inverter in 3–5 kW domestic induction cooktops using series-resonant topology at 20–50 kHz. IC Role / Device Role / Timing Role: Hard-switched power switch with zero-voltage switching assistance; diode conducts resonant tank current during half-cycle. Use Value: Low Cres (6.0 pF) and fast trr reduce capacitive turn-on loss and improve ZVS margin across wide load variations. | Use Scenario: Primary-side switch in IGBT-based inverter welding machines delivering 200 A DC output with 50% duty cycle. IC Role / Device Role / Timing Role: Pulse-width modulated main switch handling 100–500 A peak currents; integrated diode manages flyback energy during arc interruption. Use Value: 52 A ILM clamped inductive rating allows robust short-circuit withstand without external desaturation protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT-with-integrated-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRG4BC20KD | Same TO-220AB package, but slower diode (trr ≈ 100 ns), higher Eoff (0.35 mJ), no HEXFRED™ softness | Less suitable for >10 kHz operation due to higher diode-induced voltage overshoot and EMI | Select when cost sensitivity outweighs high-frequency efficiency and EMI targets |
| FGA25N120ANTD | 1200 V rating, higher VCE(sat) (3.2 V), larger Qg (45 nC), different pinout (tab = emitter) | Designed for higher bus voltages (800 V DC); not drop-in due to reversed tab polarity and gate drive requirements | Choose only for 1200 V systems requiring extended voltage margin and accepting higher conduction loss |
Compared with IRG4BC20KD and FGA25N120ANTD, the IRGBC20UD2 uniquely balances 600 V rating, HEXFRED™ soft recovery, and low thermal resistance-making it optimal for compact, high-efficiency 400 V bus motor drives where diode-related losses dominate system efficiency.
Availability
IRGBC20UD2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, induction heating systems, and welding power supplies requiring stable component supply and long-term production continuity.
Supply support for IRGBC20UD2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
The IRGBC20UD2 belongs to Infineon's legacy "UltraFast CoPack" IGBT product line, engineered specifically for high-frequency, high-reliability hard-switching applications where integrated diode softness and thermal performance are critical.
FAQ
Is IRGBC20UD2 RoHS compliant and halogen-free?
Yes, IRGBC20UD2 meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The TO-220AB package uses lead-free matte tin plating on leads and complies with Infineon's Material Declaration Sheet 2022-0417.
What is the maximum allowable gate drive voltage and recommended gate resistor value?
The absolute maximum VGE is ±20 V; operation above ±15 V risks gate oxide damage. For standard 480 V bus operation, a 50 Ω non-inductive gate resistor is recommended to balance switching speed (td(off) ≈ 130 ns) and oscillation damping.
Can IRGBC20UD2 be used in parallel configurations?
Parallel operation is not recommended due to positive temperature coefficient of VCE(sat) being insufficient to ensure current sharing-measured ∆VCE(sat)/∆TJ is only +0.69 V/°C, below the typical ≥1.0 V/°C threshold for stable paralleling without active balancing.
Does the integrated diode support bidirectional current in synchronous rectification mode?
No-the integrated diode is unidirectional and optimized for freewheeling, not synchronous rectification. Its forward voltage (1.4–1.7 V) and recovery characteristics are not designed for controlled turn-on; external MOSFETs are required for true synchronous operation.
IRGBC20UD2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 13 A
- Current - Collector Pulsed (Icm):
- -
- Vce(on) (Max) @ Vge, Ic:
- 3V @ 15V, 6.5A
- Power - Max:
- 60 W
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRGBC20UD2 FAQ
1.How can I place an order for IRGBC20UD2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGBC20UD2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGBC20UD2 reliable?
The price and inventory of IRGBC20UD2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGBC20UD2 is usually 5 days.
3.What payment methods are accepted for IRGBC20UD2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGBC20UD2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGBC20UD2?
IRGBC20UD2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGBC20UD2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGBC20UD2?
For technical support, including IRGBC20UD2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGBC20UD2 requirements.
6.How does Aetrix verify that IRGBC20UD2 is sourced from the original manufacturer or authorized distributors?
All IRGBC20UD2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGBC20UD2 meets industry standards.
7.What is the process for return or replacement of IRGBC20UD2?
All IRGBC20UD2 units undergo pre-shipment inspection (PSI). If there is an issue with IRGBC20UD2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGBC20UD2 part is unused and in its original packaging.
Return procedure for IRGBC20UD2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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