Infineon Technologies IRGBC30F

Overview

IRGBC30F from International Rectifier is a 600V, 31A (T_C = 25°C) insulated gate bipolar transistor optimized for medium-frequency switching (1–10 kHz) in hard-switched industrial inverters and motor drives. It delivers V_CE(sat) ≤ 2.1 V at I_C = 17 A / V_GE = 15 V, total switching loss of 2.4–3.5 mJ (T_J = 25–150°C), and features integrated emitter inductance of 7.5 nH for controlled turn-off behavior.

For engineers reviewing the IRGBC30F datasheet, IRGBC30F pinout, IRGBC30F application, or IRGBC30F equivalent, key selection criteria include its 600V V_CES, 2.1V V_CE(sat) at rated current, 27 nC total gate charge, 1.2 °C/W junction-to-case thermal resistance, and TO-220AB package suitability for heatsink-mounted 1–10 kHz power conversion stages.

Technical Context

The IRGBC30F employs a planar punch-through IGBT structure with optimized carrier lifetime control to balance conduction and switching losses across 1–10 kHz operation. Its gate threshold voltage (3.0–5.5 V) and negative temperature coefficient of V_GE(th) (−11 mV/°C) support stable parallel operation under thermal stress.

Switching performance is characterized by 25 ns turn-on delay, 21 ns rise time, and 210–320 ns turn-off delay (T_J = 25°C); tail current contribution is explicitly included in E_off = 2.1 mJ and total E_ts = 2.4–3.5 mJ, validated per Fig. 9–11 and 14 under clamped inductive load conditions.

Key Specifications

Pinout & Package

IRGBC30F is housed in a JEDEC TO-220AB package with isolated tab (electrically connected to collector), standardized for mechanical mounting and thermal transfer via M3 screw (1.1 N·m torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP30NC60WD and FGL40N60UFD, the IRGBC30F offers the lowest thermal resistance (R_θJC = 1.2 °C/W) and most tightly specified tail-inclusive E_off, making it optimal for thermally constrained 1–10 kHz industrial inverters where TO-220AB mounting is fixed.

Availability

IRGBC30F is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), induction heating generators, and welding power supplies requiring stable component supply and long-term production continuity.

Supply support for IRGBC30F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-efficiency, high-reliability devices for industrial and automotive power systems.

The IRGB-series IGBTs were developed specifically for medium-frequency hard-switched inverters, emphasizing balanced conduction-switching trade-offs and robust SOA for motor control and power conversion.

FAQ

What is the maximum continuous collector current for IRGBC30F at 100°C case temperature?

The IRGBC30F supports 17 A continuous collector current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_θJC = 1.2 °C/W and maximum junction temperature of +150°C. Operation above this current requires active cooling verification per Fig. 4.

Does IRGBC30F include an anti-parallel diode?

No, the IRGBC30F is a discrete IGBT without an integrated freewheeling diode. External ultrafast or soft-recovery diodes (e.g., ISL9R3060P2) must be used in antiparallel configuration for inductive load commutation. Its SOA and switching loss data assume external diode use per Fig. 13a test circuit.

Can IRGBC30F be paralleled for higher current capacity?

Yes-its negative V_GE(th) temperature coefficient (−11 mV/°C) and flat output characteristics (Fig. 2, 5) support stable current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors; thermal coupling between devices must also be minimized to avoid thermal runaway.

What is the recommended gate resistor value for 6 kHz operation?

A 23 Ω gate resistor is validated in the datasheet (Fig. 9, 10) for 480V, 17A switching at 25–150°C, yielding td(off) = 210–290 ns and E_ts = 2.4–3.6 mJ. For 6 kHz operation, this value balances switching loss and EMI; reducing below 15 Ω increases dv/dt stress and may require snubbers, while increasing above 33 Ω raises E_ts by >15%.