Infineon Technologies IRGBC30FD2

Overview

IRGBC30FD2 from Infineon Technologies is a co-packaged 600 V, 31 A insulated gate bipolar transistor (IGBT) with integrated ultrafast soft-recovery HEXFRED™ diode in TO-220AB package. It delivers V_CE(sat) ≤ 2.1 V at 15 V gate drive and 31 A collector current, optimized for 1–10 kHz motor control, UPS, and industrial power supplies where low tail loss and soft reverse recovery are critical.

For engineers reviewing the IRGBC30FD2 datasheet, IRGBC30FD2 pinout, IRGBC30FD2 application, or IRGBC30FD2 equivalent, key selection criteria include co-packaged diode recovery performance (t_rr = 42–60 ns), total switching loss (E_ts = 3.0–4.6 mJ), thermal resistance (R_θJC = 1.2 °C/W IGBT), and gate charge (Q_g = 27–30 nC) under clamped inductive load conditions.

Technical Context

The IRGBC30FD2 integrates an N-channel IGBT and a soft-recovery diode in a single TO-220AB housing, sharing common thermal and electrical paths. Its design targets medium-frequency hard-switching applications with strict requirements on diode reverse recovery behavior-evidenced by low Q_rr (80–180 nC), controlled I_rr (3.5–6.0 A), and di(rec)M/dt up to 180 A/µs at 25°C.

Switching characteristics are characterized under standardized clamped inductive load tests (V_CC = 480 V, R_G = 23 Ω, I_C = 17 A). The device exhibits temperature-stable turn-off delay (t_d(off) = 300–450 ns at 25°C; 420 ns at 150°C) and fall time (t_f = 220–350 ns at 25°C; 480 ns at 150°C), enabling predictable loss modeling across junction temperatures from –55°C to +150°C.

Key Specifications

Pinout & Package

Package: TO-220AB, single-in-line 3-pin through-hole package with isolated tab (collector connected to tab). Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature limit: 300°C for 10 sec at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-with-integrated-diode applications.

Compared with STGP30NC60WD and IXGN30N60B3, the IRGBC30FD2 provides balanced trade-offs: lower V_CE(sat) than ST's part, softer diode recovery than IXYS's, and proven HEXFRED™ diode reliability in long-life industrial UPS deployments.

Availability

IRGBC30FD2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), welding inverters, and induction heating generators requiring stable component supply and long-term production continuity.

Supply support for IRGBC30FD2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and power conversion markets.

The IRGBC series targets high-reliability medium-frequency power conversion, emphasizing co-packaged IGBT-diode integration, soft recovery, and validated clamped inductive load ruggedness for industrial-grade inverters.

FAQ

What is the maximum allowable gate-emitter voltage for IRGBC30FD2?

The absolute maximum gate-to-emitter voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended operating gate drive is +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off to prevent spurious conduction. Gate resistor selection must ensure dV_GE/dt remains within safe limits during fast switching transitions.

Can IRGBC30FD2 be used in parallel configurations?

Parallel operation is not recommended due to inherent parameter spread in V_CE(sat) and threshold voltage (V_GE(th) = 3.0–5.5 V), which causes current imbalance. If parallel use is unavoidable, individual gate resistors, matched emitter resistors, and symmetrical layout are mandatory. Derating total current by ≥30% is required to maintain thermal stability across devices.

What is the significance of the "FD2" suffix in IRGBC30FD2?

The "FD2" suffix denotes Infineon's second-generation co-packaged IGBT with HEXFRED™ diode, featuring improved softness (lower I_rr overshoot and reduced Q_rr dispersion) and enhanced thermal coupling between IGBT and diode dies compared to first-generation FD parts. It reflects qualification to extended industrial temperature cycling and humidity testing standards.

How does the integrated diode differ from standard ultrafast diodes?

This HEXFRED™ diode is specifically engineered for co-packaging: its carrier lifetime and doping profile are tuned to match the IGBT die's thermal expansion coefficient and switching speed, resulting in synchronized junction temperature tracking and minimized thermal stress during repetitive commutation. Unlike discrete diodes, it guarantees matched t_rr and Q_rr drift versus temperature across the shared substrate.