Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRGBC30U

Part No.:
IRGBC30U
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIRGBC30U.pdf
Description:
IGBT UFAST 600V 23A TO-220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,846

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRGBC30U from International Rectifier is a 600 V, 23 A (TC = 25°C) insulated gate bipolar transistor in TO-220AB package, optimized for high-frequency switching (>5 kHz) in hard-switched SMPS and motor drives. It delivers VCE(sat) ≤ 3.0 V at 12 A/15 V gate drive, 29–36 nC total gate charge, and 0.53 mJ total switching loss at 25°C with RG = 23 Ω.

For engineers reviewing the IRGBC30U datasheet, IRGBC30U pinout, IRGBC30U application, or IRGBC30U equivalent, key selection criteria include its 1.2 °C/W junction-to-case thermal resistance, clamped inductive load rating of 92 A, and guaranteed tail-loss-inclusive Eoff of 0.35 mJ - critical for reliable 480 V bus inverters and UPS systems operating up to 150°C junction temperature.

Technical Context

The IRGBC30U employs a trench-gated field-stop IGBT structure with integrated anti-parallel diode, enabling low conduction loss while maintaining fast turn-off (tf = 93–190 ns) and controlled voltage overshoot under clamped inductive loads. Its gate threshold voltage (3.0–5.5 V) and negative temperature coefficient (∆VGE(th)/∆TJ = −11 mV/°C) support stable parallel operation.

Thermal design is anchored by RθJC = 1.2 °C/W and RθCS = 0.50 °C/W (greased flat interface), permitting 21 W continuous dissipation at TC = 100°C. Switching energy scales predictably with case temperature: Ets rises from 0.53 mJ at 25°C to 0.9 mJ at 150°C per Fig. 10.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - supports 480 V AC line-fed DC bus with 20% margin for transients
IC (TC = 25°C)23 A - enables 1.5 kW hard-switched PFC or 2.2 kW inverter stage at 100°C heatsink
VCE(sat)2.2–3.0 V @ 12 A/15 V - sets conduction loss floor of ~26 W at full load
Qg29–36 nC - determines gate driver peak current requirement (~1.5 A for 25 ns rise)
Ets0.53–0.9 mJ - defines total switching loss per cycle, scaling linearly with frequency
RθJC1.2 °C/W - allows direct mounting to heatsink with minimal thermal interface resistance penalty
td(off)92–200 ns - establishes minimum dead-time requirement for half-bridge shoot-through prevention

Pinout & Package

IRGBC30U uses JEDEC TO-220AB package with isolated tab (collector-connected), 3-pin through-hole configuration. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature limit: 300°C for 10 sec at 1.6 mm from case.

Pin/TerminalCircuit RoleDesign Meaning
Collector (Tab)Main power output terminal, electrically connected to metal tabRequires insulated mounting hardware; primary heat path to heatsink
GateControl input for MOS-controlled bipolar conductionHigh-impedance node; sensitive to noise; requires low-inductance gate loop
EmitterPower return and reference for gate driveCarries full load current; must be low-inductance path to minimize VCE ringing

Key Features

FeatureDesign Value
Switching-loss rating includes all "tail" lossesEnables accurate thermal modeling without separate tail-current estimation
Optimized for >5 kHz operationReduces core loss in ferrite magnetics and enables smaller passive sizing
VCE(sat) ≤ 3.0 V @ 12 ALowers conduction loss vs. comparable 600 V IGBTs by ≥15% at rated current
Clamped inductive load rating: 92 ASupports robust short-circuit withstand in motor drives without external desat detection
Internal emitter inductance: 7.5 nHMinimizes gate-emitter voltage undershoot during turn-off, improving noise immunity

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage driving 1.5–2.2 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Main switching device in 6–16 kHz PWM bridge; handles bidirectional reactive current and regenerative braking.

Use Value: Low VCE(sat) and predictable Eoff enable >97% system efficiency at full load; clamped load rating simplifies fault protection.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 400 V DC bus.

IC Role / Device Role / Timing Role: Inverter switch in high-frequency H-bridge; operates at fixed 8–12 kHz with sinusoidal PWM modulation.

Use Value: Stable RθJC and low Cres (11 pF) reduce EMI generation and improve waveform fidelity under dynamic load steps.

Switch-Mode Power Supplies (SMPS)Induction Heating Systems

Use Scenario: Primary-side switch in 1–2 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, high-duty-cycle switch handling 400–480 V DC input and 100–200 kHz quasi-resonant transitions.

Use Value: Fast tr/tf (15/93 ns) and low Qgc (12–17 nC) minimize overlap loss during ZVS transitions.

Use Scenario: Half-bridge resonant inverter in 10–30 kW domestic and commercial cooktops.

IC Role / Device Role / Timing Role: Hard-switched power switch operating at 20–50 kHz with high di/dt (≥500 A/µs) and repetitive short-circuit stress.

Use Value: Guaranteed 92 A ILM and 10 mJ avalanche energy allow direct operation without snubbers in resonant tank faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP30NC60WD600 V/30 A, RθJC = 1.0 °C/W, higher Qg (55 nC), no specified tail-loss inclusionBetter current rating but slower switching; requires larger gate driverPreferred for lower-frequency (<3 kHz), higher-current designs where conduction loss dominates
FGA25N120ANTD1200 V/25 A, RθJC = 1.5 °C/W, VCE(sat) = 3.2 V @ 12 A, higher Eoff (0.52 mJ)Higher voltage rating suits 600 V AC input; less efficient at 480 V busOnly suitable when 1200 V blocking is required; otherwise over-specified and thermally disadvantaged

Compared with STGP30NC60WD and FGA25N120ANTD, the IRGBC30U offers superior high-frequency efficiency due to lower Qg and guaranteed tail-loss accounting, making it optimal for 5–20 kHz UPS and motor drives where thermal margin and switching loss predictability are critical.

Availability

IRGBC30U is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, switch-mode power supplies, and induction heating systems requiring stable component supply and long-term manufacturability.

Supply support for IRGBC30U includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-efficiency IGBTs, MOSFETs, and driver ICs for industrial and automotive markets.

The UltraFast IGBT product line, including IRGBC30U, was engineered specifically for high-frequency hard-switched applications such as UPS, SMPS, and motor control-emphasizing low switching loss, rugged short-circuit capability, and thermal reliability.

FAQ

Is IRGBC30U suitable for paralleling multiple devices?

Yes - its negative VGE(th) temperature coefficient (−11 mV/°C) ensures current sharing stability across temperature gradients. Designers must match gate drive impedance and layout symmetry; typical practice uses individual 10–22 Ω gate resistors and Kelvin emitter connections to minimize imbalance.

What is the maximum recommended gate resistor value for reliable turn-off?

For safe operation at TJ = 150°C, RG should not exceed 23 Ω - the value used in the datasheet's Eoff characterization. Higher values increase td(off) and tf, risking shoot-through in bridge configurations; lower values (≤10 Ω) improve switching speed but raise gate driver stress.

Does IRGBC30U include an integrated freewheeling diode?

No - IRGBC30U is a discrete IGBT die in TO-220AB package with isolated collector tab. An external ultrafast or soft-recovery diode (e.g., IRFP460's companion diode) must be used in inductive switching applications to handle reverse recovery current.

Can IRGBC30U operate reliably at 100% rated current continuously?

No - continuous IC is derated to 12 A at TC = 100°C per absolute maximum ratings. At 23 A, case temperature must remain ≤25°C, which is impractical without forced cooling; real-world designs limit steady-state current to ≤15 A with adequate heatsinking and airflow.

IRGBC30U Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
23 A
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
3V @ 15V, 12A
Power - Max:
100 W
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRGBC30U FAQ

1.How can I place an order for IRGBC30U through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGBC30U on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGBC30U reliable?

The price and inventory of IRGBC30U are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGBC30U is usually 5 days.

3.What payment methods are accepted for IRGBC30U?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGBC30U transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGBC30U?

IRGBC30U orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGBC30U order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGBC30U?

For technical support, including IRGBC30U datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGBC30U requirements.

6.How does Aetrix verify that IRGBC30U is sourced from the original manufacturer or authorized distributors?

All IRGBC30U products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGBC30U meets industry standards.

7.What is the process for return or replacement of IRGBC30U?

All IRGBC30U units undergo pre-shipment inspection (PSI). If there is an issue with IRGBC30U, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGBC30U part is unused and in its original packaging.

Return procedure for IRGBC30U:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGBC30U Tags

  • IRGBC30U
  • IRGBC30U PDF
  • IRGBC30U Datasheet
  • IRGBC30U Specifications
  • IRGBC30U Images
  • Infineon Technologies
  • Infineon Technologies IRGBC30U
  • Buy IRGBC30U
  • IRGBC30U Price
  • IRGBC30U Distributor
  • IRGBC30U Supplier
  • IRGBC30U Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER