Infineon Technologies IRGBC30UD2

Overview

IRGBC30UD2 from Infineon Technologies is a co-packaged n-channel IGBT with integrated ultrafast soft-recovery HEXFRED™ diode in TO-220AB package, rated for 600 V V_CES, 23 A continuous collector current at T_C = 25°C, and 3.0 V V_CE(sat) at 12 A/15 V_GE. It delivers 1.5–2.5 mJ total switching loss (E_ts) at 480 V, optimized for >5 kHz operation in motor drives and UPS inverters.

For engineers reviewing the IRGBC30UD2 datasheet, IRGBC30UD2 pinout, IRGBC30UD2 application, or IRGBC30UD2 equivalent, key selection criteria include its co-packaged diode reverse recovery time (42–120 ns), gate charge (29–36 nC), junction-to-case thermal resistance (1.2 °C/W for IGBT), soft-switching capability, and clamped inductive load rating (92 A).

Technical Context

The IRGBC30UD2 integrates an IGBT die and a HEXFRED™ ultrafast soft-recovery diode in a single TO-220AB package, sharing common thermal and mechanical mounting. Its gate drive requires ±20 V maximum, with 3.0–5.5 V threshold voltage and negative temperature coefficient (−11 mV/°C).

Switching performance is characterized by 67 ns turn-on delay and 170–250 ns turn-off delay at 25°C, with energy losses explicitly including tail current and diode reverse recovery effects. Thermal design relies on validated R_θJC values: 1.2 °C/W (IGBT) and 2.5 °C/W (diode), enabling accurate junction temperature estimation under high-frequency PWM.

Key Specifications

Pinout & Package

Package: TO-220AB, single-ended through-hole mount with isolated tab (collector connected to case). Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature limit: 300°C for 10 sec at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + integrated diode applications.

Compared with STGP30NC60WD and IXGN30N60B3, the IRGBC30UD2 offers lower gate charge and TO-220AB compatibility for legacy board space, while trading off some current rating and thermal efficiency-ideal for cost-sensitive 5–8 kHz motor controls where footprint and driver simplicity are prioritized.

Availability

IRGBC30UD2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, induction heating systems, and welding power supplies requiring stable component supply and long-term obsolescence management.

Supply support for IRGBC30UD2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

The IRGBC series targets cost-optimized, high-reliability IGBT modules for medium-power switching applications, emphasizing co-packaged integration, thermal predictability, and ruggedness in harsh industrial environments.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies switching loss measurements using R_G = 23 Ω. Increasing R_G beyond 33 Ω significantly extends td(off) and tf, raising E_off and risking thermal runaway at high frequencies. For 8 kHz operation with 15 V drive, 15–22 Ω is optimal to balance loss, EMI, and shoot-through immunity.

Can the integrated diode handle freewheeling current in a synchronous buck converter?

No-the IRGBC30UD2 is not rated for synchronous rectification. Its diode is optimized for clamped inductive loads and motor commutation, not continuous unidirectional freewheeling. Use dedicated Schottky or SiC diodes for buck output stages requiring low V_F and zero Q_rr.

Is the collector tab electrically isolated from the package body?

Yes-the TO-220AB outline provides electrical isolation between the collector (tab) and the plastic body. However, the tab itself is at collector potential; external insulation (e.g., silicone pad, mica washer) is mandatory when mounting to a grounded heatsink to prevent short circuits.

How does junction temperature affect V_CE(sat) and switching times?

V_CE(sat) increases by ~0.5 mV/°C above 25°C (measured at 12 A), while td(off) and tf increase ~15% from 25°C to 150°C. These shifts are documented in Figs. 2 and 9–11; thermal design must account for both conduction and switching loss growth at elevated T_J.