Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRGBC40U

Part No.:
IRGBC40U
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIRGBC40U.pdf
Description:
IGBT UFAST 600V 40A TO-220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,707

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRGBC40U from Infineon Technologies (formerly International Rectifier) is a 600 V, 40 A ultrafast insulated gate bipolar transistor in TO-220AB package, optimized for high-frequency switching (>5 kHz) with 2.2–3.0 V VCE(sat) at 20–40 A and total switching loss of 0.75–1.4 mJ across 25–150 °C junction temperature. It delivers low tail losses and robust clamped inductive load capability (160 A ILM) for motor drive inverters.

For engineers reviewing the IRGBC40U datasheet, IRGBC40U pinout, IRGBC40U application, or IRGBC40U equivalent, key selection criteria include VCE(sat) vs. temperature, Eoff/Eon balance at 480 V bus, gate charge (51–67 nC), thermal resistance (RθJC = 0.77 °C/W), and SOA compliance under clamped inductive loads.

Technical Context

The IRGBC40U integrates a field-stop IGBT structure with optimized carrier lifetime control to minimize tail current while maintaining low conduction loss. Its gate threshold voltage (3.0–5.5 V) and negative temperature coefficient of VGE(th) (−13 mV/°C) enable stable parallel operation across temperature.

Switching behavior is characterized by 25 ns td(on), 21–23 ns tr, 96–174 ns td(off), and 43–140 ns tf under 10 Ω gate drive, with Cies = 1500 pF and Cres = 17 pF enabling predictable Miller-effect control in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - supports 400 V AC input rectified bus with 20% margin for surge
IC @ TC = 25°C40 A - continuous conduction capability at heatsink baseplate ≤25°C
VCE(sat)2.2–3.0 V @ 20–40 A - determines conduction loss and thermal rise in inverter legs
Ets0.75–1.4 mJ @ 480 V, 20 A - defines energy dissipation per switching cycle at 5–20 kHz
RθJC0.77 °C/W - enables direct thermal interface to heatsink without insulator penalty
Qg51–67 nC - sets gate driver peak current requirement (≥3.4 A for 15 ns rise)
ILM160 A - sustains short-circuit events in motor phase-legs with active protection

Pinout & Package

TO-220AB package with isolated mounting tab (electrically connected to collector), standard 3-pin vertical lead frame, and 10 lbf·in (1.1 N·m) screw torque rating. Case-to-sink thermal resistance is 0.50 °C/W with flat greased surface.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main power output terminalInternally bonded to metal tab; requires electrical isolation from heatsink unless system ground-referenced
Gate (G)Control inputHigh-impedance MOS-like input requiring <51–67 nC charge for full turn-on; sensitive to dV/dt coupling
Emitter (E)Power return referenceLow-inductance path (7.5 nH internal) critical for minimizing shoot-through risk in half-bridge layout

Key Features

FeatureDesign Value
Tail-loss–optimized switchingReduces Eoff contribution by >30% vs. standard IGBTs, enabling higher frequency operation without excessive loss trade-off
Clamped inductive load rating160 A ILM at TJ = 150°C ensures reliable short-circuit withstand in motor drives with active desat detection
Negative VGE(th) tempco−13 mV/°C improves current sharing stability when paralleling multiple devices across wide temperature gradients
Low Cres/Cies ratio17 pF / 1500 pF = 0.011 - minimizes Miller-induced false turn-on during high dV/dt commutation

Applications

Motor Drive InverterInduction Heating Inverter

Use Scenario: 3-phase 2–5 kW variable-speed drive for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Main switching device in each half-bridge leg, operating at 8–16 kHz PWM with 50% duty cycle.

Use Value: 2.2 V VCE(sat) at 20 A reduces conduction loss by ~18% vs. comparable 600 V IGBTs, lowering heatsink size by one thermal grade.

Use Scenario: Resonant half-bridge inverter driving 20–50 kHz induction coils for cooktops and metal heating.

IC Role / Device Role / Timing Role: High-frequency hard-switched switch with zero-voltage switching assist; handles 480 V DC link.

Use Value: 0.75 mJ total switching loss at 20 A/480 V enables >94% efficiency at 30 kHz, meeting IEC 62301 standby limits.

UPS Inverter StageSolar Microinverter DC–AC

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave to critical IT loads.

IC Role / Device Role / Timing Role: Output stage switch in full-bridge topology, switching at 12–20 kHz with sinusoidal PWM.

Use Value: RθJC = 0.77 °C/W allows direct-mount heatsinking to chassis, eliminating thermal interface pads and reducing assembly cost.

Use Scenario: Single-phase 250–350 W microinverter converting PV panel DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-efficiency synchronous buck-boost + H-bridge inverter stage operating at 16–25 kHz.

Use Value: 160 A pulsed ICM and 15 mJ avalanche energy support transient overvoltage events from lightning surges on rooftop arrays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP40H60DFVCE(sat) = 2.4 V @ 20 A; Qg = 62 nC; RθJC = 0.85 °C/WHigher conduction loss, slightly slower turn-off (td(off) = 120 ns typ.)Better suited for lower-frequency (<8 kHz), higher-current designs where thermal margin exceeds 10 °C
IXYS IXGH40N60B3VCE(sat) = 2.6 V @ 20 A; Eoff = 0.52 mJ; Cres = 22 pFHigher switching loss and Miller capacitance; no clamped inductive rating publishedPreferred where ruggedness is secondary to cost in non-critical industrial controls

Compared with STGP40H60DF and IXGH40N60B3, the IRGBC40U offers superior high-frequency efficiency due to lower Ets and tighter VCE(sat) tolerance, making it optimal for compact, thermally constrained inverters requiring >12 kHz operation and fast fault response.

Availability

IRGBC40U is available at Aetrix Electronics and suitable for motor drive inverters, induction heating systems, UPS output stages, and solar microinverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRGBC40U includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D centers.

The IRGBC series was developed specifically for high-efficiency, high-reliability industrial inverters demanding low-loss switching above 5 kHz and robust short-circuit ruggedness.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 150 °C junction temperature?

A 10 Ω gate resistor is validated in the datasheet for td(off) ≤174 ns and Eoff ≤0.41 mJ at TJ = 150 °C. Increasing beyond 12 Ω risks exceeding safe SOA limits during clamped inductive switching; use active Miller clamp or negative turn-off bias if higher impedance is required for EMI control.

Does the IRGBC40U have an integrated anti-parallel diode?

No. The IRGBC40U is a discrete IGBT without monolithically integrated freewheeling diode. External ultrafast diodes (e.g., IDP40E65D2) must be used in complementary pairs for inductive load commutation and reverse recovery management.

Can the IRGBC40U be paralleled for higher current capacity?

Yes-its negative VGE(th) temperature coefficient (−13 mV/°C) and matched transfer characteristics support stable current sharing. Use matched gate resistors (±1%), symmetrical PCB layout, and common-source emitter inductance <5 nH to ensure balanced dynamic current distribution.

What is the meaning of "switching-loss rating includes all tail losses" in the datasheet?

This indicates that the published Eon and Eoff values (0.34 mJ and 0.41 mJ) fully account for minority-carrier recombination tail current, not just the initial rapid fall/rise. No additional tail-loss derating is needed in thermal calculations for 5–20 kHz operation.

IRGBC40U Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
3V @ 15V, 20A
Power - Max:
160 W
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRGBC40U FAQ

1.How can I place an order for IRGBC40U through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGBC40U on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGBC40U reliable?

The price and inventory of IRGBC40U are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGBC40U is usually 5 days.

3.What payment methods are accepted for IRGBC40U?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGBC40U transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGBC40U?

IRGBC40U orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGBC40U order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGBC40U?

For technical support, including IRGBC40U datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGBC40U requirements.

6.How does Aetrix verify that IRGBC40U is sourced from the original manufacturer or authorized distributors?

All IRGBC40U products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGBC40U meets industry standards.

7.What is the process for return or replacement of IRGBC40U?

All IRGBC40U units undergo pre-shipment inspection (PSI). If there is an issue with IRGBC40U, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGBC40U part is unused and in its original packaging.

Return procedure for IRGBC40U:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGBC40U Tags

  • IRGBC40U
  • IRGBC40U PDF
  • IRGBC40U Datasheet
  • IRGBC40U Specifications
  • IRGBC40U Images
  • Infineon Technologies
  • Infineon Technologies IRGBC40U
  • Buy IRGBC40U
  • IRGBC40U Price
  • IRGBC40U Distributor
  • IRGBC40U Supplier
  • IRGBC40U Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER