Infineon Technologies IRGBF20F

Overview

IRGBF20F from International Rectifier is a 900 V, 9.0 A (25°C) insulated gate bipolar transistor optimized for medium-frequency switching (1–10 kHz) in hard-switched industrial inverters and motor drives, featuring 4.3 V V_CE(sat) at 5.3 A/15 V, 17 nC total gate charge, and 0.61 mJ total switching loss at 25°C with 50 Ω gate resistance.

For engineers reviewing the IRGBF20F datasheet, IRGBF20F pinout, IRGBF20F application, or IRGBF20F equivalent, key selection criteria include clamped inductive load capability (18 A), thermal resistance (R_θJC = 2.1 °C/W), junction temperature range (–55 to +150°C), and TO-220AB package compatibility with standard heatsink mounting.

Technical Context

The IRGBF20F integrates an n-channel IGBT die with internal emitter inductance of 7.5 nH and uses a planar gate structure enabling stable threshold voltage (3.0–5.5 V) and negative temperature coefficient for V_CE(sat). Its switching characteristics are characterized under clamped inductive load conditions (V_CC = 720 V, L = 10 µH, R_G = 50 Ω).

It delivers 0.36 mJ turn-off loss and 0.25 mJ turn-on loss at 25°C, with total switching loss rising to 1.10 mJ at 150°C case temperature-confirming suitability for thermally constrained 1–10 kHz PWM stages where tail current management is critical.

Key Specifications

Pinout & Package

IRGBF20F is housed in a JEDEC-standard TO-220AB package with isolated tab (electrically connected to collector), screw-mount compatible footprint, and 10 lbf·in (1.1 N·m) recommended mounting torque. Thermal pad is electrically active and must be isolated from heatsink unless system-level grounding permits.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGW20NB60WD and IXGH20N90A, the IRGBF20F uniquely balances 900 V rating, moderate gate charge, and proven 1–10 kHz efficiency-making it optimal for cost-sensitive, space-constrained industrial inverters where thermal design margin is tight.

Availability

IRGBF20F is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating generators requiring stable component supply and long-term manufacturing continuity.

Supply support for IRGBF20F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-efficiency, high-reliability devices for industrial and automotive power conversion.

The IRGBF20F belongs to the Fast Speed IGBT product line, designed specifically for medium-frequency hard-switched applications where conduction loss, switching loss, and ruggedness must be simultaneously optimized.

FAQ

What is the maximum clamped inductive load current for IRGBF20F?

The IRGBF20F is rated for 18 A clamped inductive load current (I_LM) under repetitive conditions per Figure 12 and test circuit Fig. 13a. This rating assumes V_GE = 20 V, pulse width ≤ 80 µs, and duty factor ≤ 0.1%. It reflects the device's ability to survive short-circuit events in motor drive half-bridges without latch-up or second breakdown.

Does IRGBF20F have an integrated freewheeling diode?

No, the IRGBF20F is a standalone IGBT without an integrated body diode or co-packaged freewheeling diode. External fast-recovery or SiC Schottky diodes must be used in anti-parallel configuration for inductive load commutation. The device's E_ARV rating (5.0 mJ) applies only to unclamped inductive switching, not continuous diode conduction.

What gate resistor value is recommended for 4 kHz operation?

For 4 kHz PWM in motor drives, a 33 Ω gate resistor is recommended to balance switching speed and EMI. At this value, measured t_d(off) ≈ 200 ns and t_f ≈ 180 ns at T_J = 25°C (per Fig. 9), yielding ~0.8 mJ total switching loss-within thermal limits for 13 W power dissipation at R_θJC = 2.1 °C/W.

Can IRGBF20F be mounted directly to a grounded heatsink?

No-its TO-220AB package has the collector electrically connected to the metal tab. Direct mounting to a grounded heatsink creates a short between collector and system ground. An electrically isolating thermal pad (e.g., mica or ceramic) with thermal grease is required, or use of an isolated mounting kit compliant with UL 60950-1 creepage/clearance requirements.