Infineon Technologies IRGC100B120UB

Overview

IRGC100B120UB from International Rectifier is a 1200V, 100A nominal ultra-fast non-punch-through (NPT) IGBT die in 150mm wafer form, designed for high-frequency switching in industrial power conversion. It delivers 3.2V typical V_CE(on) at 100A/25°C, supports 10µs short-circuit capability, and features square RBSOA and positive V_CE(on) temperature coefficient-enabling robust parallel operation in welding inverters and induction heating systems.

For engineers reviewing the IRGC100B120UB datasheet, IRGC100B120UB pinout, IRGC100B120UB application, or IRGC100B120UB equivalent, key selection criteria include verified short-circuit ruggedness, wafer-level V_CE(on) consistency at 100A, NPT technology benefits for >20kHz operation, and die-attach thermal limits up to 300°C.

Technical Context

This IGBT die employs GEN5 NPT silicon technology with optimized carrier lifetime control, enabling low conduction loss while maintaining fast turn-off and soft recovery characteristics. Its square reverse-biased safe operating area (RBSOA) and 10µs short-circuit withstand time are validated at wafer level under V_GE = 15V, T_J = 25°C conditions.

The device exhibits a positive V_CE(on) temperature coefficient across its operating junction range, supporting stable current sharing in paralleled configurations without external emitter resistors. Front-side metallization uses 99% Al–1% Si (4µm), and backside metal stack is Al–Ti–Ni/V–Ag with defined thickness grading for thermal and mechanical reliability.

Key Specifications

Pinout & Package

IRGC100B120UB is supplied as an unsingulated die on 150mm wafer with standard <100> flat orientation. No discrete package; terminals are exposed top-side metallization: Emitter (front Al–Si), Collector (backside Al–Ti–Ni/V–Ag), and Gate (front polysilicon + metal). Die outline drawing 01-5318 defines street width (≥100µm) and ink dot location.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT die applications.

Compared with IXGN100N120B3 and IKP100N120CH3, IRGC100B120UB uniquely combines wafer-level availability, 10µs short-circuit rating, and NPT square RBSOA-making it the only option qualified for high-reliability, high-current die-attach applications in welding and induction heating modules.

Availability

IRGC100B120UB is available at Aetrix Electronics and suitable for welding inverters, induction heating systems, and UPS inverter modules requiring stable component supply and wafer-level integration flexibility.

Supply support for IRGC100B120UB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial and automotive markets.

IRGC100B120UB belongs to the GEN5 NPT IGBT die family, developed specifically for high-frequency, high-ruggedness industrial power conversion where wafer-level integration, short-circuit immunity, and parallel stability are critical.

FAQ

Is IRGC100B120UB supplied as singulated die or on wafer?

IRGC100B120UB is shipped as a sawn 150mm wafer on film frame-not as individual die. Singulation is performed by the customer during module assembly. The wafer includes standard <100> flat and ink dot marking per lot for orientation and traceability.

What is the maximum recommended die attach temperature?

The datasheet specifies that optimum electrical results require die attach temperature not to exceed 300°C. Exceeding this risks degradation of front-side metallization adhesion and gate oxide integrity, especially during transient thermal cycling in high-power modules.

Does IRGC100B120UB have a guaranteed parameter set at die level?

No-this die is offered with a conditional performance guarantee. Electrical parameters (e.g., V_CE(on), V_GE(th)) are 100% tested at wafer level, but final packaged performance may vary due to interconnect parasitics, thermal interface quality, and molding stresses.

Can IRGC100B120UB be used in parallel without emitter resistors?

Yes-its positive V_CE(on) temperature coefficient enables stable current sharing in parallel configurations. However, matched layout symmetry, identical die attach quality, and balanced gate drive routing remain essential to avoid thermal imbalance and current hogging.